# BSIM6: Analog and RF Compact Model for Bulk MOSFET

##### Citations

98 citations

### Cites methods from "BSIM6: Analog and RF Compact Model ..."

...bulk (BSIM-BULK) (formerly BSIM6) MOSFET model [21],...

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...For any nth subtransistor (an MFMIS NCFET), the local gate charge density, QG n (=gate charge per unit area of the n th subtransistor) can be accessed from the BSIM-BULK Verilog-A code, which calculates it using an analytical expression [21], [22]....

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...BSIM-BULK evaluates inversion charge densities at the source and drain of each subtransistor, which are further used to calculate the surface potential at these nodes [21], [22]....

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89 citations

### Cites background from "BSIM6: Analog and RF Compact Model ..."

...Current at any position in the channel comprising of drift and diffusion components is given by [16], [20]...

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### Cites background from "BSIM6: Analog and RF Compact Model ..."

...This factor is also presented in the BSIM6 drain current model with the name slope factor [15]....

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##### References

3,156 citations

### "BSIM6: Analog and RF Compact Model ..." refers background in this paper

...In accumulation and inversion under depletion approximation, the bulk charge is given as [31]...

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...(30) Solution of Poisson equation with gradual channel approximation and potential balance relationship establishes the following relationship [31]:...

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1,244 citations

### "BSIM6: Analog and RF Compact Model ..." refers background in this paper

...While BSIM3 and BSIM4 are threshold-based models, there also exist different class of models based on surface potential approach [3], [4] and charge-based approach [5]....

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466 citations

338 citations