Buried‐oxide ridge‐waveguide InAlAs‐InP‐InGaAsP (λ∼1.3 μm) quantum well heterostructure laser diodes
TL;DR: In this paper, the buried native oxide of InAlAs constricts the current and reduces edge and surface losses, with a threshold currents as low as ∼140 mA for ∼13μm-wide stripes (L∼750 μm), with maximum continuous wave output powers as high as ∼225 mW/facet and external differential quantum efficiencies up to 67% (300 K, uncoated facets).
Abstract: Native oxide technology is used to fabricate long wavelength (λ∼1.3 μm) InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes with a buried oxide undercutting and constricting the ridge‐waveguide active region. The buried native oxide of InAlAs constricts the current and reduces edge and surface losses. Data are presented showing threshold currents as low as ∼140 mA for ∼13‐μm‐wide stripes (L∼750 μm), with maximum continuous wave output powers as high as ∼225 mW/facet and external differential quantum efficiencies up to 67% (300 K, uncoated facets).
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Patent•
04 Dec 1996
TL;DR: In this article, a conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes.
Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.
183 citations
Patent•
08 Dec 1997
TL;DR: In this paper, a conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes.
Abstract: A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.
54 citations
TL;DR: Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made both technically and commercially in the use of oxides in compound semiconductor devices as mentioned in this paper.
Abstract: Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made both technically and commercially in the use of oxides in compound semiconductor devices. Devices ranging from lasers to transistors have been fabricated that capitalize on the process-induced modification of refractive index and conductivity, allowing control of the two carriers of information in opto-electronic systems—the photon and the electron. Of particular note has been the use of oxidation for the fabrication of high-speed vertical-cavity surface-emitting lasers, which have extensive use in optical data links found in enterprise networks, data centers, and supercomputing applications. The discovery of III-V oxidation and key technical milestones in the fabrication of photonic and electronic devices that use oxidation are reviewed.
46 citations
Patent•
PARC1
TL;DR: In this article, a phase array of oxide-coupled VCSELs is proposed to increase the light intensity at a point by connecting adjacent VLSELs in the array, thereby allowing mode coupling between adjacent adjacent lasers and the output of a coherent beam.
Abstract: A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity at a point. In applications where beam coherence from the VCSEL array is desirable, high gain coupling regions break the continuity of the oxide wall surrounding each VCSEL aperture. The high gain coupling regions connect adjacent VCSELs in the VCSEL array thereby allowing mode coupling between adjacent lasers and the output of a coherent beam of light.
45 citations
28 Aug 2013
TL;DR: Here, the low refractive index III-V oxide's interaction with the optical modes inside the VCSEL creates an optimal overlap of gain and field, enabling lasers with ultralow threshold currents and desirable optical beam properties.
Abstract: Since the discovery of III-V oxidation by Dallesasse and Holonyak in 1989, significant progress has been made, both technically and commercially, on the use of oxides in compound semiconductor devices. The process-induced modification of refractive index and conductivity allows control of the two carriers of information in optoelectronic systems, the photon and the electron, enabling wide-ranging device applications. Of great technical and commercial importance has been the use of oxidation for the fabrication of high-speed vertical-cavity surface-emitting lasers (VCSELs), first implemented by Deppe's group at The University of Texas at Austin (Austin, TX, USA). Here, the low refractive index III-V oxide's interaction with the optical modes inside the VCSEL creates an optimal overlap of gain and field, enabling lasers with ultralow threshold currents and desirable optical beam properties. The discovery of III-V oxidation, key technical milestones in the fabrication of photonic and electronic devices that use oxidation, and the application to VCSELs are reviewed.
39 citations
Cites background from "Buried‐oxide ridge‐waveguide InAlAs..."
...Among the more significant contributions has been the application of oxidation to aluminum bearing material systems other than AlxGa1 xAs [15], [16], the use of oxidation to improve the reliability of high-brightness LEDs [10], work on III–V oxide field-effect transistors (FETs) at the UIUC and the University of Notre Dame (Notre Dame, IN, USA) [8], [9], the use of lateral oxidation to form edge-emitting lasers [7], and the use of lateral oxide apertures in the Holonyak– Feng transistor laser [17]....
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References
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TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Abstract: Data are presented on the conversion (selective conversion) of high‐composition (AlAs)x(GaAs)1−x layers, e.g., in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C). Hydrolyzation oxidation of a fine‐scale AlAs(LB)‐GaAs(Lz) SL (LB +Lz≲100 A), or random alloy AlxGa1−xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse‐scale ‘‘alloy’’ such as an AlAs‐GaAs superlattice with LB + Lz≳200 A.
561 citations
TL;DR: In this article, a new form of AlyGa1−yAs−GaAs•InxGa 1−xAs laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated.
Abstract: A new form of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure (QWH) laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated. The laser diodes are defined from a mesa edge by the selective lateral oxidation and anisotropic oxidation of high Al composition AlyGa1−yAs layers (y=0.85, 0.87) located above and below the QW and waveguide active region. This structure provides excellent current and optical confinement, resulting in continuous wave threshold currents of ∼8 mA and maximum output powers (uncoated laser) of 35 mW/ facet for a∼2.5 μm aperture.
119 citations
TL;DR: In this article, a planar planar index guided AlGaAs−GaAs quantum well heterostructure (QWH) laser was fabricated by oxidation (H2O vapor+N2 carrier gas, 425-525°C) of a significant thickness of the high composition AlxGa1−xAs upper confining layer (outside the active stripe).
Abstract: High‐performance planar ‘‘buried‐mesa’’ index‐guided AlGaAs‐GaAs quantum well heterostructure (QWH) lasers have been fabricated by oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of a significant thickness of the high composition AlxGa1−xAs upper confining layer (outside the active stripe). The oxide provides excellent current confinement for low‐threshold laser operation and a low refractive index (n∼1.6) for transverse optical confinement and index guiding. Laser diodes with ∼4 μm‐wide active regions exhibit 300 K continuous (cw) laser thresholds of 8 mA, with single longitudinal mode operation to 23 mW/facet, and maximum output powers of 45 mW/facet (uncoated). Devices fabricated on a lower confinement AlxGa1−xAs‐GaAs QWH crystal (x≲0.6 instead of x≳0.8) with ∼4 μm‐wide active stripes exhibit 300 K cw thresholds of 9 mA and total external differential quantum efficiencies of 66%. Peak output powers ≳80 mW/facet (uncoated) with linear L‐I characteristics over the entire operating range are observed. In...
44 citations
TL;DR: In this paper, a gain-guided nativeoxide defined stripe geometry laser with threshold currents of 200 mA (1 kA/cm2) emitting with multiple longitudinal modes centered at λ∼1.5 μm is presented.
Abstract: Native oxidation (‘‘wet’’ oxidation via H2O vapor+N2) of InAlAs is employed to fabricate long wavelength (λ∼1.5 μm) InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes. Data are presented on gain‐guided native‐oxide‐defined stripe‐geometry lasers (40 μm×500 μm) with threshold currents of 200 mA (1 kA/cm2) emitting with multiple longitudinal modes centered at λ∼1.5 μm. The threshold currents, approximated as Ith=I0 exp(T/T0), exhibit a characteristic temperature of T0∼49 K and an operating temperature as high as T=70 °C. Maximum continuous output powers of 140 mW/facet (uncoated facets) and a differential quantum efficiency of 38% are achieved.
43 citations
01 Mar 1991
TL;DR: A brief history of the semiconductor laser and a short tutorial on its basic operating principles are given in this paper, where some key criteria for semiconductor lasers to be used in advanced systems are discussed.
Abstract: A brief history of the semiconductor laser and a short tutorial on its basic operating principles are given. Some key criteria for semiconductor lasers to be used in advanced systems are discussed. Various advanced laser structures (including single-frequency, high-speed and wavelength tunable lasers, laser transmitter optoelectronic integrated circuits, and coherent receiver photonic integrated circuits) are presented together with their performance characteristics. >
38 citations