Journal ArticleDOI
Calculation of the Γ-L electron-phonon and hole-phonon scattering matrix elements in germanium
O. J. Glembocki,Fred H. Pollak +1 more
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This article is published in Physical Review B.The article was published on 1982-06-15. It has received 11 citations till now. The article focuses on the topics: Phonon scattering & Biological small-angle scattering.read more
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Journal ArticleDOI
Microscopic theory of intervalley scattering in GaAs : K dependence of deformation potentials and scattering rates
TL;DR: In this paper, the authors applied the "rigid pseudoion" model to intervalley scattering processes in GaAs and obtained the intervalley deformation potentials (IDPs) at high symmetry points.
Journal ArticleDOI
Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors
Jiseok Kim,Massimo V. Fischetti +1 more
TL;DR: In this article, the effective masses for relaxed and biaxially strained Si, Ge, III-V compound semiconductors and their alloys on different interface orientations were calculated using nonlocal empirical pseudopotential with spin-orbit interaction.
Journal ArticleDOI
Alloy scattering in AlGaN and InGaN : A numerical study
TL;DR: In this paper, the wave-vector-dependent rates of disorder-induced alloy scattering have been computed for wurtzite AlGaN and InGaN to determine the transport properties of III-nitride alloys through full band Monte Carlo simulation.
Book ChapterDOI
Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors
TL;DR: In this paper, the authors used the potential of the ions as the sole input to simulate carrier transport in semiconductors, and described within a single framework both the carrier kinematics and most of the dynamics (carrier-phonon collisions).
Journal ArticleDOI
Short-range deformation-potential interaction and its application to ultrafast processes in semiconductors
TL;DR: In this article, a semi-empirical model for the short-range deformationpotential (DP) interaction in bulk (elemental or compound) semiconductors (not semiconductor alloys), which governs the transfer of carriers between different equivalent or nonequivalent conduction band (CB) valleys, was developed.
Related Papers (5)
Calculation of the Γ-∆ Electron-Phonon and Hole-Phonon Matrix Elements in Silicon
S. Bednarek,Ulrich Rössler +1 more