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Journal ArticleDOI: 10.1063/1.1829791

Cathodoluminescence and solid phase epitaxy in Ba -irradiated α -quartz

01 Jan 2005-Journal of Applied Physics (American Institute of Physics)-Vol. 97, Iss: 1, pp 014910
Abstract: The luminescent properties of quartz and silica doped with photoactive ions depend on the structural and chemical properties of the matrix and doping elements. The dynamic solid phase epitaxy of α-quartz during Ba+-ion implantation at 300–1170K and its relationship to cathodoluminescence emission are investigated in this work. Rutherford backscattering channeling analysis revealed that the amorphous layer created by 1×1015 175keVBaions∕cm2 at 300K almost disappeared when the implantation temperature was raised to 1120K. Between 770 and 1100K the cathodoluminescence spectra taken at room temperature exhibit dramatic changes with the implantation temperature and allow to distinguish between color centers related to quartz, ion-irradiated silica, and implanted Ba ions. After achieving almost complete epitaxial recovery, only a violet band at 3.4eV remained, which we attribute to Ba-related luminescence centers. Samples first implanted with Ba ions and then postannealed in air or O218 atmosphere up to 1320K d...

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Topics: Cathodoluminescence (60%), Ion implantation (55%), Amorphous solid (51%) ...read more
Citations
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Journal ArticleDOI: 10.1088/0957-4484/18/45/455306
Liang Ding1, Tupei Chen1, Y. Liu1, Ming Yang1  +4 moreInstitutions (2)
14 Nov 2007-Nanotechnology
Abstract: Visible and infrared (IR) electroluminescence (EL) has been observed from a metal–oxide–semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at ~460, ~600, ~740, and ~1260 nm, respectively, among which the ~600 nm band is the dominant one Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy The nanocrystal distribution is found to play an important role in the EL The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated

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Topics: Ion implantation (57%), Nanocrystal (53%), Luminescence (52%) ...read more

20 Citations


Journal ArticleDOI: 10.1080/00107510601088156
Klaus-Peter Lieb1, Juhani Keinonen2Institutions (2)
Abstract: Optical functionality of materials used in devices is the basis of modern photonics. It depends on selected photoactive impurities or low-dimensional structures, which can be tailored by ion implantation. The present survey covers cathode-luminescence spectroscopy performed after Ge, Ba, Na, Rb and Cs ion implantation in α-quartz, in connection with dynamic, laser-induced and chemical epitaxy of the surface layers amorphized during the ion irradiation. The correlations, which emerged for various luminescence bands, ion species and thermal processing methods, allows one to classify the bands into ion-specific and intrinsic ones. The microstructural properties measured by ion beam analysis and transmission electron microscopy will be combined with the luminescence data, and the role of photoactive defects in quartz and nanoparticles of the implants will be discussed. The technologically most attractive case of double Rb/Ge implantation will be highlighted, which combines the achievement of full chemical epi...

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Topics: Ion implantation (60%), Luminescence (55%), Ion beam analysis (55%) ...read more

15 Citations


Journal ArticleDOI: 10.1063/1.1994953
Abstract: The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of α-quartz, we studied double Ge∕Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic α-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1×1014–1×1016ions∕cm2 and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 1015 implanted Geions∕cm2, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.

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Topics: Ion implantation (56%), Luminescence (53%), Cathodoluminescence (52%) ...read more

12 Citations


Open accessJournal ArticleDOI: 10.1039/C9NA00388F
11 Sep 2019-
Abstract: Epitaxial films of piezoelectric α-quartz could enable the fabrication of sensors with unprecedented sensitivity for prospective applications in electronics, biology and medicine. However, the prerequisites are harnessing the crystallization of epitaxial α-quartz and tailoring suitable film microstructures for nanostructuration. Here, we bring new insights into the crystallization of epitaxial α-quartz films on silicon (100) from the devitrification of porous silica and the control of the film microstructures: we show that by increasing the quantity of devitrifying agent (Sr) it is possible to switch from an α-quartz microstructure consisting of a porous flat film to one dominated by larger, fully dense α-quartz crystals. We also found that the film thickness, relative humidity and the nature of the surfactant play an important role in the control of the microstructure and homogeneity of the films. Via a multi-layer deposition method, we have extended the maximum thickness of the α-quartz films from a few hundreds of nm to the μm range. Moreover, we found a convenient method to combine this multilayer approach with soft lithography to pattern silica films while preserving epitaxial crystallization. This improved control over crystallization and the possibility of preparing patterned films of epitaxial α-quartz on Si substrates pave the path to future developments in applications based on electromechanics, optics and optomechanics.

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Topics: Crystallization (52%), Silicon (51%), Crystal growth (50%)

11 Citations


Journal ArticleDOI: 10.1063/1.4722278
Abstract: In this work, SiGe/SiO2 multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 °C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 °C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over ...

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11 Citations


References
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Journal ArticleDOI: 10.1016/0168-583X(85)90762-1
Lawrence Doolittle1Institutions (1)
Abstract: A computer program which simulates Rutherford backscattering spectra is currently in use at Cornell University and other institutions. Straggling and detector resolution are among the effects included. Samples are considered to be made up of a finite number of layers, each with uniform composition. The emphasis in the mathematics is on accuracy beyond that of iterated surface approximation methods. Thicker layers can thus be analyzed without a net loss in accuracy. The mathematical description of the sample can then have fewer layers and fewer calculations are required. This paper provides estimates of the number of arithmetic operations used by the program for any simulation to demonstrate the tradeoffs between accuracy, computation time, and algorithm sophistication.

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2,510 Citations


Journal ArticleDOI: 10.1080/00337577008235042
F. F. Morehead1, B. L. Crowder1Institutions (1)
Abstract: The effective annealing of ion implantations in Si is aided by the formation of continuous amorphous layer. The amorphous layer regrows epitaxially at 500–600°C and incorporates the dopant in an electrically active, uncompensated form. A phenomenological model is proposed which, with adjustable parameters, accounts for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and, with minor additional assumptions, dose rate.

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Topics: Amorphous solid (61%), Ion implantation (58%), Ion (51%) ...read more

396 Citations


Journal ArticleDOI: 10.1016/0168-583X(85)90688-3
M. Uhrmacher1, K. Pampus1, F. J. Bergmeister1, D. Purschke1  +1 moreInstitutions (1)
Abstract: Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.

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Topics: Doppler broadening (56%), Acceleration voltage (53%), Resonance (51%) ...read more

291 Citations


Open accessBook
01 Jan 1992-
Abstract: Ion exchange from salt melts silver-film ion exchange technique theoretical analysis of ion-exchanged glass waveguides optical waveguide characterization techniques waveguides and devices.

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Topics: Waveguide (optics) (62%)

290 Citations



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