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Journal ArticleDOI

Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser

15 Feb 1985-Applied Physics Letters (American Institute of Physics)-Vol. 46, Iss: 4, pp 328-330
TL;DR: In this article, a new type of buried heterostructure InGaAsP/InP lasers are described, which are grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate.
Abstract: A new type of buried heterostructure InGaAsP/InP lasers grown by a single‐step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2‐μm‐wide active region.

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Citations
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Book ChapterDOI
01 Jan 1993
TL;DR: In this article, different InGaAsP laser structures with particular emphasis on their performance in terms of the light, current characteristics, threshold current, and the threshold current's temperature dependence are discussed.
Abstract: Semiconductor lasers operating in the wavelength range of 1.1–1.65 µm can be fabricated using the InGaAsP quaternary material which has been grown lattice-matched on an InP substrate.1 Room-temperature continuous operation of InGaAsP-InP double-heterostructure lasers was first reported2 in 1976. Since then, a large number of laser structures have been developed guided by the performance requirements of specific applications. This chapter discusses different InGaAsP laser structures with particular emphasis on their performance in terms of the light—current characteristics, the threshold current, and the threshold current’s temperature dependence. Other performance characteristics that make a laser structure suitable as a source for high-speed digital lightwave transmission systems are discussed in detail in Chapter 6.

3 citations

References
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Journal ArticleDOI
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Abstract: Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.

265 citations

Journal ArticleDOI
TL;DR: In this article, 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35 µm at room temperature were fabricated on
Abstract: In 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35\mu m at room temperature were fabricated on

106 citations

Journal ArticleDOI
TL;DR: In this article, a two-phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice matched compositions, 0⩾y<1, 0?x<0.47.
Abstract: A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.

90 citations

Journal ArticleDOI
TL;DR: In this paper, the diffusion of Cd and Zn into InP was investigated at temperatures ranging from 566°C to 715°C, and it was found that the diffusion depth decreases monotonically with decreasing band gap energy.
Abstract: The diffusion of Cd and Zn into InP was investigated at temperatures ranging from 566°C to 715°C. Cd diffusion using a combination source composed of Cd3P2 and InP powder allows us to establish a shallow diffusion depth (Xj) of less than a few microns and to form a highly planar p-n junction without surface deterioration. On the other hand, Zn diffusion using a combination source consisting of Zn3P2 (or ZnP2)+InP powder proceeded rapidly and resulted in irregular diffusion fronts. When selective diffusion of Cd into InP was carried out using a PSG film mask, slip dislocations were found to be generated along the mask edge if the amount of InP powder in the diffusion ampoule was not sufficient (≤100 mg). Cd diffusion into InGaAsP (Eg=0.95–1.35 eV) lattice matched to InP was also carried out, and it was found that the diffusion depth decreases monotonically with decreasing band gap energy.

22 citations

Journal ArticleDOI
TL;DR: In this article, a V•grooved substrate buried heterostructure (VSB) InGaAsP/InP laser by one-step epitaxy emitting at 1.3 μm wavelength is developed.
Abstract: A V‐grooved substrate buried heterostructure (VSB) InGaAsP/InP laser by one‐step epitaxy emitting at 1.3 μm wavelength is developed. The one‐step epitaxy VSB laser is realized by using Cd diffusion for the formation of the p‐InP internal current restriction layer. Efficient current restriction is confirmed in the Cd‐diffused current restriction structure to be comparable to that by two‐step epitaxy. The VSB laser by one‐step epitaxy showed a cw threshold current of about 15 mA at 25 °C and a far field pattern as smooth as that of the two‐step epitaxy VSB laser. The T0 value was 50–60 K below 55 °C and was 30 K above 55 °C. The threshold current obtained here is the lowest among various InGaAsP/InP lasers by one‐step epitaxy.

21 citations