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Journal ArticleDOI

Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser

15 Feb 1985-Applied Physics Letters (American Institute of Physics)-Vol. 46, Iss: 4, pp 328-330

AbstractA new type of buried heterostructure InGaAsP/InP lasers grown by a single‐step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2‐μm‐wide active region.

Topics: Semiconductor laser theory (51%), Laser (50%)

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Citations
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Book ChapterDOI
01 Jan 1993
Abstract: Semiconductor lasers operating in the wavelength range of 1.1–1.65 µm can be fabricated using the InGaAsP quaternary material which has been grown lattice-matched on an InP substrate.1 Room-temperature continuous operation of InGaAsP-InP double-heterostructure lasers was first reported2 in 1976. Since then, a large number of laser structures have been developed guided by the performance requirements of specific applications. This chapter discusses different InGaAsP laser structures with particular emphasis on their performance in terms of the light—current characteristics, the threshold current, and the threshold current’s temperature dependence. Other performance characteristics that make a laser structure suitable as a source for high-speed digital lightwave transmission systems are discussed in detail in Chapter 6.

3 citations


References
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Journal ArticleDOI
Abstract: Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.

262 citations


Journal ArticleDOI
Abstract: In 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35\mu m at room temperature were fabricated on

104 citations


Journal ArticleDOI
Abstract: A two‐phase supercooled solution method is described for the LPE growth of In1−xGaxAsyP1−y on 〈100〉 InP over the entire range of lattice‐matched compositions, 0⩾y<1, 0?x<0.47. Liquid and solid compositions, distribution coefficients, and band‐gap data which may be used to design specific devices are presented.

90 citations


Journal ArticleDOI
Abstract: The diffusion of Cd and Zn into InP was investigated at temperatures ranging from 566°C to 715°C. Cd diffusion using a combination source composed of Cd3P2 and InP powder allows us to establish a shallow diffusion depth (Xj) of less than a few microns and to form a highly planar p-n junction without surface deterioration. On the other hand, Zn diffusion using a combination source consisting of Zn3P2 (or ZnP2)+InP powder proceeded rapidly and resulted in irregular diffusion fronts. When selective diffusion of Cd into InP was carried out using a PSG film mask, slip dislocations were found to be generated along the mask edge if the amount of InP powder in the diffusion ampoule was not sufficient (≤100 mg). Cd diffusion into InGaAsP (Eg=0.95–1.35 eV) lattice matched to InP was also carried out, and it was found that the diffusion depth decreases monotonically with decreasing band gap energy.

22 citations


Journal ArticleDOI
Abstract: We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p‐n junction plane coincides with the surface exposed in the high‐temperature H2 ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.

21 citations