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Journal Article•DOI•

Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser

M. Yi, L. T. Lu, E. Kapon, Z. Rav-Noy, Shlomo Margalit, Amnon Yariv 
15 Feb 1985-Applied Physics Letters (American Institute of Physics)-Vol. 46, Iss: 4, pp 328-330
TL;DR: In this article, a new type of buried heterostructure InGaAsP/InP lasers are described, which are grown by a single-step liquid phase epitaxy on Cd diffused mesa substrate.
Abstract: A new type of buried heterostructure InGaAsP/InP lasers grown by a single‐step liquid phase epitaxy on Cd diffused mesa substrate is described. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 15 mA are achieved for a laser with a 2‐μm‐wide active region.

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Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Citations
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Book Chapter•DOI•
Laser Structures and Their Performance

[...]

Govind P. Agrawal1, Niloy K. Dutta2•
University of Rochester1, Bell Labs2
01 Jan 1993
TL;DR: In this article, different InGaAsP laser structures with particular emphasis on their performance in terms of the light, current characteristics, threshold current, and the threshold current's temperature dependence are discussed.
Abstract: Semiconductor lasers operating in the wavelength range of 1.1–1.65 µm can be fabricated using the InGaAsP quaternary material which has been grown lattice-matched on an InP substrate.1 Room-temperature continuous operation of InGaAsP-InP double-heterostructure lasers was first reported2 in 1976. Since then, a large number of laser structures have been developed guided by the performance requirements of specific applications. This chapter discusses different InGaAsP laser structures with particular emphasis on their performance in terms of the light—current characteristics, the threshold current, and the threshold current’s temperature dependence. Other performance characteristics that make a laser structure suitable as a source for high-speed digital lightwave transmission systems are discussed in detail in Chapter 6.

3 citations

References
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Journal Article•DOI•
Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1.3 μm) lasers

[...]

Ryoichi Hirano, E. Oomura, H. Higuchi, Y. Sakakibara, H. Namizaki, W. Susaki, K. Fujikawa 
15 Jul 1983-Applied Physics Letters
TL;DR: In this article, a degradation of the buried crescent (BC) InGaAsP/InP laser was found when the p−n junction plane coincides with the surface exposed in the high-temperature H2 ambient before the melt contact during the liquid phase epitaxial growth.
Abstract: We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p‐n junction plane coincides with the surface exposed in the high‐temperature H2 ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 °C.

21 citations

Journal Article•DOI•
Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate

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M. Oron, N. Tamari, H. Shtrikman, C. A. Burrus
01 Oct 1982-Applied Physics Letters
TL;DR: In this paper, the lasing properties of InGaAsP crescent shape mesa substrate buried heterojunction (CMSB) lasers emitting at 1.3 μm are described.
Abstract: The lasing properties of InGaAsP crescent‐shape mesa substrate buried heterojunction (CMSB) lasers emitting at 1.3 μm are described. Threshold currents as low as 20 mA have been observed with a temperature sensitivity T0 = 97 °C. An external differential quantum efficiency (two facets) of up to 54% was observed. This combination of the characteristics is directly attributed to the device structure which is specially designed to decrease lateral leakage current. Single transverse and longitudinal mode operation was realized with output powers of at least 5 mW per facet.

19 citations

Journal Article•DOI•
Embedded epitaxial growth of low‐threshold GaInAsP/InP injection lasers

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P. C. Chen, K. L. Yu, Shlomo Margalit, Amnon Yariv
01 Mar 1981-Applied Physics Letters
TL;DR: In this article, single growth liquid phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique.
Abstract: Single‐growth liquid‐phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4‐mm‐wide active region.

14 citations

Related Papers (5)
Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser

[...]

01 Dec 1985-Applied Physics Letters
Kazuhiro Tanaka, M. Hoshino, K. Wakao, Junji Komeno, Hiroshi Ishikawa, S. Yamakoshi, H. Imai 
Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers

[...]

01 Aug 1980-Journal of Applied Physics
M. Hirao, Atsutoshi Doi, S. Tsuji, Michiharu Nakamura, K. Aiki 
InGaAsP/InP distributed‐feedback injection lasers fabricated by one‐step liquid phase epitaxy

[...]

15 Sep 1979-Applied Physics Letters
A. Doi, T. Fukuzawa, M. Nakamura, Ryoichi Ito, K. Aiki 
Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm

[...]

13 Sep 1979-Electronics Letters
S. Akiba, Kazuo Sakai, Yuichi Matsushima, Takaya Yamamoto 
Buried‐oxide ridge‐waveguide InAlAs‐InP‐InGaAsP (λ∼1.3 μm) quantum well heterostructure laser diodes

[...]

23 May 1994-Applied Physics Letters
Michael R. Krames, Nick Holonyak, John Edward Epler, H. P. Schweizer