CdS Thin Film Transistor for Inverter and Operational Amplifier Circuit Applications
TL;DR: In this paper, organic and inorganic thin film transistors (TFTs) are fabricated, simulated, and tested for circuit applications and two-dimensional finite element simulation methodology is used.
About: This article is published in Microelectronic Engineering.The article was published on 2016-05-01 and is currently open access. It has received 50 citations till now. The article focuses on the topics: Operational amplifier & Transistor.
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TL;DR: In this article, the effect of substrate and Zn concentration on the crystallization behavior and optical and electrical properties of the CdS thin films by X-ray diffraction, atomic force microscope, Xray photoelectron spectroscopic, Raman scattering, UV-vis spectrophotometer, and transportation measurement system was investigated.
80 citations
TL;DR: In this article, pure CdS and Cu-doped thin films were deposited using the spray pyrolysis technique and characterized using XRD, XPS, AFM, UV-VIS spectroscopy and two probe DC-conductivity measurements.
Abstract: Pure CdS and Cu-doped CdS thin films were deposited using the spray pyrolysis technique and characterized using XRD, XPS, AFM, UV-VIS spectroscopy and two probe DC-conductivity measurements. 2%, 4% and 6% Cu-content was used for doping. The particle size was found to decrease from 28 nm to 25.4 nm upon Cu-doping. The influence of Cu-doping on the stress and dislocation per unit volume has been estimated from the XRD data. AFM images of the annealed films show changes in morphology with increase in surface roughness from 25 nm to 31 nm with Cu-6% doping. Reflectance and transmission measurements were studied in the spectral range of 200–1100 nm to extract the optical properties variation upon copper doping. Also the band gap was found to decrease from 2.43 to 2.39 eV with increase in copper content. The electrical conductivity was measured by direct record of the resistance against temperature. All films show a semiconducting behavior and incorporation of Cu on CdS increases its activation energy.
65 citations
Cites background from "CdS Thin Film Transistor for Invert..."
...CdS thin film has drawn a large attention among researchers in the field of transistors [1], FET, LEDs [2], photonics [3], photocatalysis [4], NIR-detectors [5], energy storage systems due to its high stability, excellent physical, chemical and optical properties which are different from bulk....
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TL;DR: In this article, a significant influence of thickness on physical properties of fluorine-doped cadmium sulfide (CdS) thin films with different thicknesses was observed.
Abstract: Fluorine (F) doped (i.e. 1 wt.%) cadmium sulfide (CdS) thin films with different thicknesses were fabricated on fluorine doped tin oxide coated glass substrates by chemical bath deposition methods. For doping of F, 1 wt.% ammonium fluoride was added into the solution. A significant influence of thicknesses on physical properties of F doped CdS thin films was observed. The thin films were investigated by various characterization techniques such as x-ray diffraction (XRD), UV–Vis–NIR, FT-Raman spectroscopy and scanning electron microscope. XRD analysis showed that the films are preferentially grown along (111) plane. The crystallites’ size changed with increases the film’s thickness. Films showed high transmittance in visible region. Raman spectra showed shift in first and second longitudinal phonon vibration (1LO and 2LO) with the change in thickness of the films. This shows that changing thickness leads to changes in the physical properties of films. The values of the band gaps were estimated as 2.60 eV, 2.75 eV, 2.80 eV for films of thickness 100 nm, 150 nm and 200 nm, respectively. Hence, the band gap of films increases with an increase in thickness. Refractive index, linear optical susceptibility, nonlinear optical susceptibility and nonlinear refractive index were also estimated. The higher values of nonlinear optical parameters shows good scope in nonlinear optical applications.
53 citations
TL;DR: In this paper, the role of Vanadium Pentoxide (V2O5) as electron blocking-hole transport layer (EB-HTL) in Cadmium Sulfide (CdS), CdTe and CdAl based heterojunction solar cells using simulation employing experimental data was presented.
52 citations
TL;DR: In this article, the influence of K-doping on structural, morphological, optical and electrical properties of CdS:Ga thin films are examined, which can be used for solar cell devices.
42 citations
References
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TL;DR: Inkjet printing has been used as a free-form fabrication method for building three-dimensional parts and is being explored as a way of printing electrical and optical devices, especially where these involve organic components.
Abstract: Inkjet printing is familiar as a method of printing text and images onto porous surfaces. In the last few years it has been used as a free-form fabrication method for building three-dimensional parts and is being explored as a way of printing electrical and optical devices, especially where these involve organic components. Inkjet printers are also being used to produce arrays of proteins and nucleic acids. The need for a versatile inkjet technology for free-forming materials and for multilayer devices raises a number of materials problems that do not apply to conventional printing of images. Higher resolutions will be needed if organic transistors are to be printed. Also, it must be possible to print pinhole-free layers to avoid shorting of devices. Multiple layers must be printed such that they mix and react to form a single material or such that they form discrete unmixed layers. Printing on dense rather than porous substrates will be the norm. This article reviews the range of materials that has been ...
1,774 citations
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01 Jan 1972TL;DR: The Solid State Electronic Devices (SSED) as discussed by the authors is an introductory book on semiconductor materials, physics, devices, and technology, which aims to: 1) develop basic semiconductor physics concepts, and 2) provide a sound understanding of current semiconductor devices and technology.
Abstract: For undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications. Teaching and Learning Experience This program will provide a better teaching and learning experience-for you and your students. It will help: *Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful. *Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices. *Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.
1,632 citations
01 Dec 1967
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Abstract: Equations are presented which fit the experimental dependence of carrier mobilities on doping density and field strength in silicon. The curve-fitting procedures are described.
1,539 citations
TL;DR: In this article, the authors demonstrate that laser sintering of inkjet-printed metal nanoparticles enables low-temperature metal deposition as well as high-resolution patterning to overcome the resolution limitation of the current inkjet direct writing processes.
Abstract: All-printed electronics is the key technology to ultra-low-cost, large-area electronics. As a critical step in this direction, we demonstrate that laser sintering of inkjet-printed metal nanoparticles enables low-temperature metal deposition as well as high-resolution patterning to overcome the resolution limitation of the current inkjet direct writing processes. To demonstrate this process combined with the implementation of air-stable carboxylate-functionalized polythiophenes, high-resolution organic transistors were fabricated in ambient pressure and room temperature without utilizing any photolithographic steps or requiring a vacuum deposition process. Local thermal control of the laser sintering process could minimize the heat-affected zone and the thermal damage to the substrate and further enhance the resolution of the process. This local nanoparticle deposition and energy coupling enable an environmentally friendly and cost-effective process as well as a low-temperature manufacturing sequence to realize large-area, flexible electronics on polymer substrates.
724 citations
TL;DR: In this article, a critical review of idealized two-phase geometrical models is given, which derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents.
Abstract: Gives a critical review of idealised two-phase geometrical models. These treatments derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents. The authors show that these models can be applied to the interpretation of transport measurements in polycrystalline films and powder layers. Important distinctions are made depending on whether the depletion layers extend completely or partially through the grains, whether the Debye length is greater or less than the grain size and whether the mean free path is greater or less than the grain size. The authors discuss the theoretical treatment of the Hall effect in percolative systems, as geometrical models neglect percolation. The modulation of Hall coefficient and conductivity by illumination and the adsorption and desorption of ambient gases are also considered.
539 citations