Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity
Citations
79 citations
41 citations
41 citations
Cites background from "Channel Temperature Analysis of GaN..."
...[5] developed an HEMT thermal resistance model in a more practical case and improved the model by considering the temperature dependence of thermal conductivity [14]....
[...]
39 citations
Cites background or methods from "Channel Temperature Analysis of GaN..."
..., the heat source is assumed the same as the gated channel in some FEA simulations [10], [12] and analytical derivations [15], [16]; whereas in [11] it is found that a heat source with twice the gate length and centered around the drain-side gate edge can fit best with measured thermal resistance....
[...]
...self-heating effect in GaN HEMTs relies on locating the heat source in the channel and then solving the heat flow equation, either through finite element analysis (FEA) [10]–[14] or analytical solutions [14]–[16]....
[...]
37 citations
Cites methods from "Channel Temperature Analysis of GaN..."
...The complete drain current can be expressed as: Ids = Ids,iso(Vgs,Vds,T )+ Ids,diff (Vgs,Vds,Vgso,Vdso) (6) where Ids,iso is determined by (1) and T is calculated using (3)-(5) and it depends on the ambient temperature in addition to the power dissipation Pdiss....
[...]
...The dependence of Rth on Pdiss [28] has been considered by implementing the following formula: Rth = [1+ 2(1+ 0.1× tanh(Pdiss − 9))Pdiss]Pdiss....
[...]
...In general, the drain current can be represented by the same model in (1) but the temperature T could be extended to consider also the self-heating as follows: T = RthPdiss + (Tref +1T ) (3) where 1T is the rise of ambient temperature with respect to reference ambient temperature Tref (typically at around 25 ◦C) and Pdiss is the intrinsic power dissipation (Pdiss = VdsIds)....
[...]
...6(b) shows the measured and simulated Pdiss with meansquare-error of 7.2×10−2....
[...]
...Pdiss in (3) is predicted by its ANN model and its static/quasi-static values are extracted by a low pass circuit....
[...]
References
1,892 citations
1,523 citations
1,503 citations
"Channel Temperature Analysis of GaN..." refers background in this paper
...In nominal, thermally limited device characterizations, it is typical to predict excellent power densities for large devices based on small device measurements [1]–[3], with low self-heating, and then observe a significant reduction [4]...
[...]
1,077 citations
"Channel Temperature Analysis of GaN..." refers background in this paper
...In nominal, thermally limited device characterizations, it is typical to predict excellent power densities for large devices based on small device measurements [1]–[3], with low self-heating, and then observe a significant reduction [4]...
[...]