Characterising Etching Processes in Bulk Micromachining
01 Jan 2006-pp 83-105
About: The article was published on 2006-01-01. It has received 2 citations till now. The article focuses on the topics: Bulk micromachining & Surface micromachining.
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TL;DR: A review on the research and developmental aspects of Microelectromechanical Systems (MEMS), which can be used in a variety of industrial as well as consumer product applications where IC-based technology fails.
Abstract: Design for miniaturisation represents a broad research topic with applications in fundamental physics, chemistry, martial science, computing methods, ultra-precision engineering, fabrication technology and micromachining based on the principles, characterisation, modelling, simulation and state-of-the-art technology. This paper presents a review on the research and developmental aspects of Microelectromechanical Systems (MEMS). MEMS is relatively a recent development which can be used in a variety of industrial as well as consumer product applications where IC-based technology fails. The review will enable the readers to understand the underlying technology, philosophy, concepts, ideas and principles including micromanufacturing, lithography, bulk and surface micromachining, microsensors, microactuators, Microopto Electromechanical Systems (MOEMS), RF MEMS, Nanoelectro Mechanical Systems (NEMS), microfluidics and BioMEMS. Aspects of microsystems in terms of design process, practice and techniques are presented.
20 citations
Cites background from "Characterising Etching Processes in..."
...Broadly, the processes fall into two categories: bulk and surface micromachining (Bag, 2005)....
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Patent•
IBM1
TL;DR: In this paper, a method of preparing an etch solution and thinning semiconductor wafers using the solution is proposed, which includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio.
Abstract: A method of preparing an etch solution and thinning semiconductor wafers using the etch solution is proposed. The method includes steps of creating a mixture of hydrofluoric acid, nitric acid, and acetic acid in a solution container in an approximate 1:3:5 ratio; causing the mixture to react with portions of one or more silicon wafers, the portions of the one or more silicon wafers are doped with boron in a level no less than 1×10 19 atoms/cm 3 ; collecting the mixture after reacting with the boron doped portions of the one or more silicon wafers; and adding collected mixture back into the solution container to create the etch solution.
3 citations
References
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01 May 1982
TL;DR: This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures.
Abstract: Single-crystal silicon is being increasingly employed in a variety of new commercial products not because of its well-established electronic properties, but rather because of its excellent mechanical properties. In addition, recent trends in the engineering literature indicate a growing interest in the use of silicon as a mechanical material with the ultimate goal of developing a broad range of inexpensive, batch-fabricated, high-performance sensors and transducers which are easily interfaced with the rapidly proliferating microprocessor. This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures. Finally, the potentials of this new technology are illustrated by numerous detailed examples from the literature. It is clear that silicon will continue to be aggressively exploited in a wide variety of mechanical applications complementary to its traditional role as an electronic material. Furthermore, these multidisciplinary uses of silicon will significantly alter the way we think about all types of miniature mechanical devices and components.
2,723 citations
Journal Article•
TL;DR: In this article, the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures are discussed.
Abstract: Single-crystal silicon is being increasingly employed in a variety of new commercial products not because of its well-established electronic properties, but rather because of its excellent mechanical properties. In addition, recent trends in the engineering literature indicate a growing interest in the use of silicon as a mechanical material with the ultimate goal of developing a broad range of inexpensive, batch-fabricated, high-performance sensors and transducers which are easily interfaced with the rapidly proliferating microprocessor. This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures. Finally, the potentials of this new technology are illustrated by numerous detailed examples from the literature. It is clear that silicon will continue to be aggressively exploited in a wide variety of mechanical applications complementary to its traditional role as an electronic material. Furthermore, these multidisciplinary uses of silicon will significantly alter the way we think about all types of miniature mechanical devices and components.
2,707 citations
Book•
01 Jan 1997TL;DR: The second edition of the Fundamentals of Microfabrication as discussed by the authors provides an in-depth coverage of the science of miniaturization, its methods, and materials, from the fundamentals of lithography through bonding and packaging to quantum structures and molecular engineering.
Abstract: MEMS technology and applications have grown at a tremendous pace, while structural dimensions have grown smaller and smaller, reaching down even to the molecular level. With this movement have come new types of applications and rapid advances in the technologies and techniques needed to fabricate the increasingly miniature devices that are literally changing our world.A bestseller in its first edition, Fundamentals of Microfabrication, Second Edition reflects the many developments in methods, materials, and applications that have emerged recently. Renowned author Marc Madou has added exercise sets to each chapter, thus answering the need for a textbook in this field.Fundamentals of Microfabrication, Second Edition offers unique, in-depth coverage of the science of miniaturization, its methods, and materials. From the fundamentals of lithography through bonding and packaging to quantum structures and molecular engineering, it provides the background, tools, and directions you need to confidently choose fabrication methods and materials for a particular miniaturization problem.New in the Second EditionRevised chapters that reflect the many recent advances in the fieldUpdated and enhanced discussions of topics including DNA arrays, microfluidics, micromolding techniques, and nanotechnology In-depth coverage of bio-MEMs, RF-MEMs, high-temperature, and optical MEMs.Many more links to the WebProblem sets in each chapter
2,334 citations
TL;DR: In this article, the complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients.
Abstract: Uniaxial tension causes a change of resistivity in silicon and germanium of both $n$ and $p$ types. The complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients. One of the shear coefficients for each of the materials is exceptionally large and cannot be explained in terms of previously known mechanisms. A possible microscopic mechanism proposed by C. Herring which could account for one large shear constant is discussed. This so called electron transfer effect arises in the structure of the energy bands of these semiconductors, and piezoresistance may therefore give important direct experimental information about this structure.
1,779 citations
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
1,039 citations