Characteristics of metal-semiconductor diodes made by a chemical reduction process
01 Jan 1980-Solid-state Electronics-Vol. 23, Iss: 1, pp 99-100
About: This article is published in Solid-state Electronics.The article was published on 1980-01-01. It has received 9 citations till now. The article focuses on the topics: Diode.
TL;DR: The field of plasma etching is reviewed in this paper, where basic principles related to plasma etch such as evaporation rates and Langmuir-Hinshelwood adsorption are introduced.
Abstract: The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.
TL;DR: In this paper, the current transport mechanism in an MIS-tunnel diode has been studied by considering both the process of tunneling and the effect of pinholes in the insulating layer.
Abstract: The current transport mechanism in an MIS-tunnel diode has been studied by considering both the process of tunneling and the effect of pinholes in the insulating layer. It has been shown that in order to explain the experimental J - V characteristics of MIS-diodes, presence of a thin interfacial layer of thickness δ p within the pinholes should be considered. From an analysis of the tJ - V and C - V characteristics, a method has been suggested for the estimation of the value of δ p . The values of interface trap density and barrier height for the MOS-part of the diodes are also calculated. The dependence of barrier height on oxide thickness for the diodes is found to obey the barrier height model of Cowley and Sze.
TL;DR: In this paper, the authors investigated the electrical behavior of two superconducting thin films coupled by a short nonsuperconducting metallic bridge, which have been made with resistances up to 0.4 Ω and critical currentresistance (i.e., IcRn ) as high as 0.5 mV.
Abstract: Josephson‐effect devices consisting of two superconducting thin films coupled by a short nonsuperconducting metallic bridge are investigated in this work. To fabricate these devices we have developed processing techniques which are compatible with refractory superconductors and show promise for the high‐Tc A15 materials as well. We describe in detail the electrical behavior of Nb‐Au‐Nb and Nb‐Cu‐Nb bridges, which have been made with resistances up to 0.4 Ω and critical current‐resistance (i.e., IcRn ) products as high as 0.5 mV. We have modified the usual theoretical model for the critical current in order to account for the actual geometry of our devices thereby obtaining semiquantitative agreement with experiment. A single parameter is used in this analysis to characterize the proximity effect and we find that values inferred from the critical currents of bridges agree well with those inferred from the behavior of the transition temperature of S/N bilayers. Typical current‐voltage characteristics are in good agreement with the predictions of the time‐dependent Ginzburg‐Landau model with rigid boundary conditions. At high dissipations heating is observed and explained by a generalized version of the hotspot model. Finally, we have employed the models for superconductor‐normal‐superconductor microbridge behavior to evaluate the ultimate potential of this particular weak‐link configuration for practical applications.
TL;DR: In this paper, it has been shown that monitoring the radio-frequency reflected power in plasma etching provides a simple and very inexpensive tool for end-point detection, which has been successfully applied to polysilicon and silicon and nitride etching.
Abstract: It has been shown that monitoring the radio-frequency reflected power in plasma etching provides a simple and very inexpensive tool for end-point detection. The technique, based on the change in plasma impedance associated with the change in plasma composition, has been successfully applied to polysilicon and silicon and nitride etching.
••01 Jan 1984
TL;DR: In this article, various metal-semiconductor systems, investigated during the last two decades, are tabulated in Table 1 and it can be seen from this table that the investigations are mainly centered round Schottky contacts based on Si and GaAs.
Abstract: Metal-semiconductor contacts showing rectifying properties are finding more and more applications in modern semiconductor devices technology(1) Apart from the fact that they are comparatively easy to fabricate and incorporate into integrated circuits, the main reason for their wide usage is that they do not exhibit minority carrier effects (e.g., long reverse recovery time, diffusion capacitance, etc.) similar to those observed in p-n junction devices. Various metal-semiconductor systems, investigated during the last two decades, are tabulated in Table 1. It can be seen from this table that the investigations are mainly centered round Schottky contacts based on Si and GaAs. Amongst the two, Si-based Schottky contacts are at present being used in a wide variety of devices and integrated circuits. Recent advances in GaAs material and processing techniques have, however, shown that not only can all of the semiconductor device structures realized in Si be fabricated in GaAs, but optical and very high speed integrated circuits can also be realized in the not-too-distant future. It is because of this as well as metallurgical and reliability considerations that the activity pertaining to GaAs-based Schottky contacts has increased appreciably during the last few years.
TL;DR: In this article, the Barrierenenergien der sperrenden Metall-Halbleiterkontakte wurden fur folgende Kombinationen ermittelt: Si and Ge je als Halbleiter and die Metalle der 1. and 8.
Abstract: Zusammenfassung Die Barrierenenergien der sperrenden Metall-Halbleiterkontakte (Schottky-Kontakte) wurden fur folgende Kombinationen ermittelt: Si und Ge je als Halbleiter und die Metalle der 1. und 8. Nebengruppe des Periodischen Systems, namlich Cu, Ag, Au; Fe, Co, Ni; Ru, Rh, Pd; Os, Ir, Pt. Die Ergebnisse werden diskutiert. Dabei wird gezeigt, dass fur diese Metalle, die im wesentlichen als die Edelmetalle bezeichnet werden konnen, ein recht gut erfullter linearer Zusammenhang zwischen ihrer Ordnungszahl Z und ihrer Barrierenhohe ΘB besteht.
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