scispace - formally typeset
Search or ask a question
Journal ArticleDOI

Characteristics of n-CuInSe2/Au Schottky diodes

01 Dec 1985-Solid-state Electronics (Pergamon)-Vol. 28, Iss: 12, pp 1251-1254
TL;DR: In this paper, the n -CuInSe 2 /Au pointcontact Schottky diode was studied using currentvoltage and capacitance-voltage measurements, and various important physical parameters of these diodes were derived from both measurements.
Abstract: The n -CuInSe 2 /Au point-contact Schottky diode was studied using current-voltage and capacitance-voltage measurements. Various important physical parameters of these diodes were derived from both measurements, and these values are comparable with the results reported on planar Schottky diodes.
Citations
More filters
Journal ArticleDOI
TL;DR: In this article, the surface state density of the minimum order of 1012 cm−2 ǫeV−1 was obtained for the etched CuInSe2 surface and the transverse doping profile was qualitatively determined.
Abstract: Al/p‐CuInSe2 Schottky contacts have been fabricated by vacuum‐depositing Al onto Bridgman‐grown p‐CuInSe2 single crystals. The barrier heights from the temperature‐dependent forward I‐V characteristics are significantly less than the C−2‐V intercepts. This is evidence of the presence of an interfacial layer and surface states in equilibrium with p‐CuInSe2. The barrier height, electron affinity, effective acceptor density, and relative Fermi potential as well as diffusion potential were estimated. The surface‐state density of the minimum order of 1012 cm−2 eV−1 was obtained for the etched CuInSe2 surface. The transverse doping profile was qualitatively determined.

19 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the effect of induction heating on device characteristics of flexible molybdenum disulfide (MoS2) field effect transistors (FETs).
Abstract: We investigated the induction heating effect on device characteristics of flexible molybdenum disulfide (MoS2) field-effect transistors (FETs). A polyimide film was employed as a flexible substrate, and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate was coated on the flexible substrate as a bottom gate. After the annealing process on the flexible MoS2 FETs by induction heating, the field effect mobility was enhanced from 2.13 to 5.58 cm2/V·s with the slight increase of the on-off ratio from 5.17 × 102 to 1.98 × 103. Moreover, the low field mobility was almost unchanged from 7.75 to 7.33 cm2/V·s, indicating that the induction heating mainly contributed to the enhancement of the device performances by contact improvement between electrodes and MoS2. With the simple model of the diode and resistor connected in series, it was confirmed that the Schottky diode disappeared with contact enhancement. Our findings can contribute to the contact improvement with minimum damage when low dimensional nanomateri...

4 citations

Journal ArticleDOI
TL;DR: In this paper, the currentvoltage characteristic of Ga 0.53 Al 0.04 Sb 0.96 (p)/GaSb(n + ) heterojunctions, obtained by liquid phase epitaxy on GaSb substrate, is studied.
Abstract: The GaAlAsSb/GaSb is an interesting system for optoelectronic device technology and particularly for the preparation of lasers and photodetectors. The current-voltage characteristic of Ga 0.53 Al 0.47 As 0.04 Sb 0.96 (p)/GaSb(n + ) heterojunctions, obtained by liquid phase epitaxy on GaSb substrate, is studied. The current of the heterojunction, which is essentially a thermoionic emission of holes, has a behavior identical to that of the Schottky diode, allowing to derive the barrier height V b = 685 meV for this heterostructure. The Richardson constant of the system is calculated to be 49.1 A cm -2 K -2 . The band offsets at the interface are determined as ΔE c = 460 meV, ΔE v = 128 meV, in agreement with other works. The variation of the valence band offset with Al composition shows a good agreement with the theoretical models proposed by Jaros and Mujica.

4 citations

Journal ArticleDOI
TL;DR: Schottky junctions have been fabricated by evaporating aluminum on electrodeposited p-type polycrystalline CuInSe2 thin films as mentioned in this paper, which showed a rectification effect with an ideality factor of about 2 in the low forwardvoltage region.
Abstract: Schottky junctions have been fabricated by evaporating aluminum on electrodeposited p‐type polycrystalline CuInSe2 thin films. The devices showed a rectification effect with an ideality factor of about 2 in the low‐forward‐voltage region. Results of carrier concentration obtained from C‐V measurements of the Schottky devices were found to be consistent with those for CdS/CuInSe2 heterojunctions fabricated on the same substrates. The apparent diffusion potential and carrier concentration of the Al/CuInSe2 Schottky junctions were both found to increase after a short heat treatment at 200 °C in air.

3 citations

References
More filters
Journal ArticleDOI
TL;DR: In this paper, an expression for the differential capacitance of a metal contact to a semiconductor in which the bulk free carrier density is degenerate or near degenerate is derived.
Abstract: An expression is derived for the differential capacitance of a metal contact to a semiconductor in which the bulk free carrier density is degenerate or near degenerate. A significant correction to the nondegenerate theory may be required for accurate measurement of the barrier height.

391 citations

Journal ArticleDOI
TL;DR: In this paper, the electrical resistivity and Hall effect of p-and n-type CuInSe2 single crystals are measured in the temperature range from 80 K to 500 K.
Abstract: The electrical resistivity and Hall effect of p- and n-type CuInSe2 single crystals are measured in the temperature range from 80 K to 500 K p- and n-type samples are prepared by doping with excess Se and excess In, respectively The acceptor levels at 0020 eV and 0028 eV above the valence band and the donor levels at 0012 eV and 018 eV below the conduction band are identified The mobility data are analysed assuming scattering by acoustic, polar optical, and nonpolar optical phonons and by ionized impurities For some of the n-type samples, the measurements are extended to liquid helium temperature and the result is analysed by the existing theories of impurity band conduction

146 citations

Journal ArticleDOI
TL;DR: In this article, the vacuum deposition of CuInCe2 thin films is reported and the temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dominance of the grain-boundary scattering mechanism.
Abstract: The vacuum deposition of CuInCe2 thin films is reported. As‐deposited films are generally n‐type due to selenide deficiencies. The temperature dependence of film mobility, conductivity, and carrier concentration are presented and indicate the dominance of the grain‐boundary scattering mechanism. Mobilities of the range 1–20 cm2/V s are reported for as‐deposited films. Data are also presented for films annealed in Ar atmospheres. Films annealed in Ar/H2Se can be made p‐type with mobilities in the range 1–8 cm2/V s. Electron and x‐ray diffraction data are discussed. Grain size data, especially the consideration of the effects of substrate temperature, are included. Photoconductive decay times are reported for the films.

116 citations

Journal ArticleDOI
TL;DR: In this article, the electrical properties of as-grown n-type CuInSe2 single crystals were investigated in the temperature from 80 to about 700 K. The electron mobility data could be analyzed accounting for scattering by acoustic, polar optical and nonpolar optical phonons and by ionized and neutral impurities.

71 citations

Journal ArticleDOI
TL;DR: In this article, the majority carrier type is dependent on crystal stoichiometry and it has been shown that the band gap has a value of 0.95 ± 0.01eV.
Abstract: Various bulk electrical properties and device characteristics have been measured. It has been shown that the majority carrier type is dependent on crystal stoichiometry. Mobilities of 660 cm2/V sec and 30 cm2/V sec have been measured for n-and p-type samples, respectively. Rectifying contacts and p-n junctions have been investigated by small signal analysis and the associated doping levels and equilibrium band diagrams have been determined. Photovoltage measurements on rectifying contacts have shown that the band-gap has a value of 0.95 ± 0.01eV.

70 citations