Characteristics of the irradiated Hamamatsu p-bulk silicon microstrip sensors
01 Oct 2008-pp 1686-1690
TL;DR: In this paper, the strip isolation and punch-through properties of microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment.
Abstract: Microstrip silicon sensors with p-bulk and n-readout are investigated as a radiation hard device for the Super LHC experiment. We evaluated the radiation hardness of the sensors fabricated by Hamamatsu Photonics through irradiation with 70-MeV protons up to the fluence of 5 × 1015 1-MeV n eq /cm2 and with 60Co γs at a rate foreseen at the Super LHC. The strip isolation and punch-through properties are characterized in detail. Various strip isolation structures, p-stop, p-spray and both combined, are examined. The results are compared among commercially available MCZ and two types of FZ wafers.
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Journal Article•
TL;DR: In this paper, the ATLAS experiment is described as installed in i ts experimental cavern at point 1 at CERN and a brief overview of the expec ted performance of the detector is given.
Abstract: This paper describes the ATLAS experiment as installed in i ts experimental cavern at point 1 at CERN. It also presents a brief overview of the expec ted performance of the detector.
2,798 citations
University of Tsukuba1, University of Liverpool2, University of Glasgow3, University of California, Santa Cruz4, Academy of Sciences of the Czech Republic5, University of Cambridge6, Brookhaven National Laboratory7, Lancaster University8, University of Ljubljana9, University of Geneva10, Stony Brook University11, Charles University in Prague12, University of Sheffield13, Spanish National Research Council14, University of New Mexico15, KEK16, University of Freiburg17
21 Apr 2011-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the authors developed n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility.
Abstract: We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb−1, which is twice the sLHC integrated luminosity goal.
38 citations
TL;DR: In this article, a non-inverting n+-on-p sensor was used at the Super LHC experiment to measure the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
Abstract: Radiation tolerance up to 1015 1-MeV neq/cm2 is required for the silicon microstrip sensors to be operated at the Super LHC experiment. As a candidate for such sensors, we are investigating non-inverting n+-on-p sensors. We manufactured sample sensors of 1 times 1 cm in 4" and 6" processes with implementing different interstrip electrical isolation structures. Industrial high resistive p-type wafers from FZ and MCZ growth are tested. They are different in crystal orientations lang100rang and lang111rang with different wafer resistivities. The sensors were irradiated with 70-MeV protons and characterized in views of the leakage current increase, noise figures, electrical strip isolation, full depletion voltage evolution, and charge collection efficiency.
13 citations
Cites background from "Characteristics of the irradiated H..."
...The annealing property of the tested wafers is reported in [15]....
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TL;DR: The RD50 collaboration has been exploring the development of radiation hard semiconductor devices for very high-luminosity colliders since 2002 as discussed by the authors, and the target fluence for the innermost tracking layers of the future upgrade of the CERN large Hadron collider (LHC) is 1016 1 MeV neutron equivalent (nq cm−2.
Abstract: The RD50 collaboration (sponsored by the European Organization for Nuclear Research CERN) has been exploring the
development of radiation hard semiconductor devices for very high-luminosity colliders since 2002. The target fluence
to qualify detectors set by the anticipated dose for the innermost tracking layers of the future upgrade of the CERN large
hadron collider (LHC) is 1016 1 MeV neutron equivalent (neq) cm−2. This is much larger than typical fluences in space,
but is mainly limited to displacement and total dose damage, without the single-event effects typical for the space
environment. RD50 investigates radiation hardening from many angles, including: Search for alternative semiconductor
to replace silicon, improvement of the intrinsic tolerance of the substrate material (p- vs. n-type, initial doping
concentration, oxygen concentration), optimization of the readout geometry (collection of holes or electrons, surface
treatment), novel detector designs (3D, edge-less, interconnects).
2 citations
Cites methods from "Characteristics of the irradiated H..."
...Figure 3 shows the FDV evolutions measured with three samples [8], which were irradiated with protons to 2×10(14) neq cm....
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KEK1
01 Nov 2010-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V.
Abstract: We have established the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V. In comparison of wafer materials, little advantage was observed in the 6 in. p-type MCZ material to the p-FZ that was available in Japan. The evolution of the charge collection as a function of bias voltage showed that the proton-irradiated samples with apparent lower full depletion voltage collected less charge at saturation than the neutron irradiated samples.
2 citations
References
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Book•
23 Feb 2020
TL;DR: The ATLAS detector as installed in its experimental cavern at point 1 at CERN is described in this paper, where a brief overview of the expected performance of the detector when the Large Hadron Collider begins operation is also presented.
Abstract: The ATLAS detector as installed in its experimental cavern at point 1 at CERN is described in this paper. A brief overview of the expected performance of the detector when the Large Hadron Collider begins operation is also presented.
3,111 citations
Journal Article•
TL;DR: In this paper, the ATLAS experiment is described as installed in i ts experimental cavern at point 1 at CERN and a brief overview of the expec ted performance of the detector is given.
Abstract: This paper describes the ATLAS experiment as installed in i ts experimental cavern at point 1 at CERN. It also presents a brief overview of the expec ted performance of the detector.
2,798 citations
Additional excerpts
...The ATLAS values [6] multiplied by 10 are 7....
[...]
21 Oct 2007-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, short strip microstrip detectors made on p-type silicon substrate for optimised radiation hardness have been irradiated with fast neutrons to various fluences up to 3 × 10 15 cm - 2.
Abstract: Silicon sensors will probably be the choice for the inner tracker detectors of the experiments in the anticipated LHC luminosity upgrade (Super LHC, SLHC). These sensors will have to survive a radiation environment almost an order of magnitude higher than within the already challenging LHC trackers. The final cumulated fluence will depend on the integrated luminosity targeted by the experiments, but an increase of a factor of 5–10 is expected. A significant contribution to the radiation damage of the sensors in the tracker volume is due to backscattered neutrons. Simulations show that the neutron flux equals the charged particle flux emerging from the interactions at a radial distance of about 25 cm from the beam axis. Irradiation with neutrons are therefore a necessary test for proving the ability of prototype silicon detectors to survive the SLHC fluences. Short strip microstrip detectors made on p-type silicon substrate for optimised radiation hardness have been irradiated with fast neutrons to various fluences up to 3 × 10 15 cm - 2 . They have been characterised in term of charge collection efficiency with LHC speed electronics (40 MHz). The results are here presented in the light of a possible upgrade scenario of the ATLAS tracker.
23 citations
"Characteristics of the irradiated H..." refers background in this paper
...Sufficient charge collection is possible [2], [3] even after irradiation owing to the high electron mobility that helps reduce the probability of carries being trapped....
[...]
01 Apr 2005-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, a 1-W focused Nd-:YAG laser was used to simulate the effects of accelerator beam loss on the ATLAS microstrip detector and the robustness of the SCT module including readout ASICs was evaluated.
Abstract: On an incident of accelerator beam loss, the tracking detector located close to the beam line is subjected to receive intensive radiation in a short period. We used a 1-W focused Nd : YAG laser and simulated the effects on the ATLAS microstrip detector. The laser corresponds to intensity of up to 1 × 10 9 mips / pulse with a pulse width of about 10 ns. We observed breaks on Al strips on extreme conditions, depending on the laser intensity and bias voltage applied to the silicon sensor. The break can be interpreted as the oxide breakdown due to a large voltage locally created across the oxide by the intensive signal charges. The robustness of the Semiconductor Tracker (SCT) module including readout ASICs is also evaluated.
16 citations
"Characteristics of the irradiated H..." refers background in this paper
...5 MΩ) and also of the implant resistance [8]....
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11 Dec 2007-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: The PACS nrs.n.−n; 29.40.Wk; 81.40 Wk; 30.40 N.Wn; −n; n.
Abstract: 4 pages, 5 figures.-- PACS nrs.: 29.40.−n; 29.40.Wk; 81.40.Wx.-- ISI Article Identifier: 000251861100008
6 citations