Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry
Citations
52 citations
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38 citations
Cites background or methods from "Characterization of AlGaN/GaN HEMTs..."
...As shown in [21], the averaged GRT temperature (40 °C) does not capture this gradient showing the necessity of a mapping technique such as TTI to capture the peak temperature and gradient....
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...1, the devices tested were six fingered devices with a 370-μm gate width and were identical to the devices measured via GRT in [21]....
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...Similar to the setup described in [21], the devices were biased under pulsed conditions using an AMCAD pulsed IV...
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...6 to the GRT measurements previously conducted under DC biasing [21]....
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...The temperature profiles are validated via gate resistance thermometry (GRT) [21], a technique that uses four-point sensing to monitor the average temperature change in the gate metal....
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25 citations
Cites methods from "Characterization of AlGaN/GaN HEMTs..."
...Recently, gate resistance thermometry (GRT) has been applied in GaN-based FETs, which can provide the best accuracy among all the available electrical methods by means of designed test structures [18], [19]....
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...The GRT approach used in this paper is based on the AlGaN/GaN HEMTs featuring a double-ended gate terminal [18], [20], [30]–[32]....
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22 citations
Cites background from "Characterization of AlGaN/GaN HEMTs..."
...In comparison, μ-Raman reports a thickness-average temperature within the GaN, and visible TR [13], [23] illumination reflects from multiple interfaces within the stack structure, with both effects leading to an...
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References
840 citations
"Characterization of AlGaN/GaN HEMTs..." refers background in this paper
...The development and fabrication of aluminum gallium nitride/gallium nitride (AlGaN/GaN) HEMTs on silicon carbide (SiC) substrates has sufficient reliability to enable the production of high-quality devices [1]....
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342 citations
"Characterization of AlGaN/GaN HEMTs..." refers background in this paper
...average temperature across the thickness of the GaN layer inside the channel [4] and near the interface with the substrate...
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241 citations
"Characterization of AlGaN/GaN HEMTs..." refers background in this paper
...This problem can be partially solved by probing the GaN layer from the back side of the device, but induces some challenges in the heat sinking of the device, because part of the heat sink has to be removed to provide optical access [7]....
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107 citations
"Characterization of AlGaN/GaN HEMTs..." refers methods in this paper
...Previous attempts to use electrical methods for thermometry show significant differences in temperature rises measured with different techniques [11]....
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66 citations
"Characterization of AlGaN/GaN HEMTs..." refers background in this paper
...To obtain the full potential out of these devices, understanding and controlling the device channel temperature will be important to their lifetime and performance [2]....
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