Characterization of aluminum oxide thin films obtained by chemical solution deposition and annealing for metal–insulator–metal dielectric capacitor applications
TL;DR: In this paper, a chemical formulation is presented that enables the chemical solution deposition of aluminum hydroxide thin films, which transforms into aluminum oxide through subsequent annealing, which represents a faster and more economical alternative for aluminum oxide thin film deposition that can be used in metal insulator-metal (MIM) dielectric capacitor applications.
About: This article is published in Applied Surface Science.The article was published on 2020-05-30. It has received 12 citations till now. The article focuses on the topics: Chemical bath deposition & Thin film.
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DOI•
01 Jan 2016
TL;DR: In this article, a continuous flow synthesis (CFS) method is proposed for the efficient, effective and reproducible synthesis of inorganic compounds, and the effect of synthesis route on particle size, size distribution, and crystallinity is compared.
Abstract: Advanced materials are essential to the quality of modern day life, but the synthesis of these compounds is often inefficient in terms of energy, time and resources; especially when considering the hydrothermal batch methods used to prepare many such compounds – often requiring week-long reaction times with variable yields and product quality. In contrast, Continuous flow synthesis (CFS) provides a more readily scalable means for the efficient, effective and reproducible synthesis of inorganic compounds. This publication demonstrates the novel CFS of several metal ammonium phosphates and compare the effect of synthesis route on particle size, size distribution, and crystallinity.
271 citations
26 Oct 2020
TL;DR: The acid base chemistry at the interface of zinc oxide (ZnO) and methylammonium lead tri-iodide (perovskite) leads to a proton transfer reaction that results in degradation as mentioned in this paper.
Abstract: The acid–base chemistry at the interface of zinc oxide (ZnO) and methylammonium lead tri-iodide (perovskite) leads to a proton transfer reaction that results in perovskite degradation. In perovskit...
9 citations
TL;DR: In this article , the atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal-insulator-metal (MIM) capacitors are investigated.
Abstract: This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al2O3/TiO2/HfO2 dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al2O3-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm−2, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10−10 A·cm−2, and quadratic voltage coefficient of 303.6 ppm·V−2. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm−2 and 0.25 fF·µm−2. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.
8 citations
01 Jan 2020
4 citations
References
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TL;DR: In this article, Tauc plots are fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots).
Abstract: One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near-edge region can be fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots). While the technique is powerful and simple, the accuracy of the fitted band-gap result is seldom stated or known. We tackle this question by refitting a large number of Tauc plots from the literature and look for trends. Nominally pure zinc oxide (ZnO) was chosen as a material with limited intrinsic deviation from stoichiometry and which has been widely studied. Our examination of the band gap values and their distribution leads to a discussion of some experimental factors that can bias the data and lead to either smaller or larger apparent values than would be expected. Finally, an easily evaluated figure-of-merit is defined that may help guide more accurate Tauc fitting. For samples with relatively sharper Tauc plot shapes, the population yields Eg(ZnO) as 3.276 ± 0.033 eV, in good agreement with data for single crystalline material.
765 citations
Journal Article•
TL;DR: In this article, the authors presented a work on capacitance characterization of organic photovoltaic cells and rectified a mistake which appeared in Carr and Chaudhary's work.
Abstract: In the 100th volume of Applied Physics Letters Carr and Chaudhary have presented a work on capacitance characterization of organic photovoltaic cells. The work concerns small signal measurements of various organic photovoltaic structures. The authors however limit their considerations to one part of small signal response, namely to capacitance measured either in parallel mode or in series mode. This attitude generally does not lead to accurate capacitance in organic devices and only for certain cases can result in appropriate values. Moreover, confusing C’’ with C’ they classify our work into “improper” models. In this comments, we go into details of capacitance characterization of organic photovoltaic cells and we rectify a mistake which appear in Carr and Chaudhary’s work.
333 citations
TL;DR: In this article, a review is presented on the status of synthesizing thin films of metal chalcogenide and metal oxides by CBD and SILAR, and properties and applications of the thin films are also summarized.
307 citations
TL;DR: In this article, it was shown that polycationic Al (charge > 2) is rhizotoxic as are other polyvalent cations, and that the identity and activities of the Al species contacting the cell surfaces are uncertain because of the H+ currents through the root surface and because of surface charges.
Abstract: The aluminium (III) released from soil minerals to the soil solution under acid conditions may appear as hexaaquaaluminium (Al(H2O) 6 3+ , or Al3+ for convenience) or may react with available ligands to form additional chemical species. That one or more of these species is rhizotoxic (inhibitory to root elongation) has been known for many decades, but the identity of the toxic species remains problematical for the following reasons. 1. Several Al species coexist in solution so individual species cannot be investigated in isolation, even in artificial culture media. 2. The activities of individual species must be calculated from equilibrium data that may be uncertain. 3. The unexpected or undetected appearance of the extremely toxic triskaidekaaluminium (AlO4Al12(OH)24(H2O) 12 7+ or Al13) may cause misattribution of toxicity to other species, especially to mononuclear hydroxy-Al. 4. If H+ ameliorates Al toxicity, or vice versa, then mononuclear hydroxy-Al may appear to be toxic when it is not. 5. The identity and activities of the Al species contacting the cell surfaces are uncertain because of the H+ currents through the root surface and because of surface charges. This article considers the implications of these problems for good experimental designs and critically evaluates current information regarding the relative toxicities of selected Al species. It is concluded that polycationic Al (charge >2) is rhizotoxic as are other polyvalent cations.
296 citations
01 Jan 2013
TL;DR: In this paper, a solution chemistry simple alkoxide based precursor system Carboxylate based precursor systems single-source precursors Acqueos Precursor Systems Solution Synthesis Strategies.
Abstract: Introduction.-Solution Chemistry Simple alkoxide based precursor systems Carboxylate based precursor systems Single-source precursors Acqueos Precursor Systems Solution Synthesis Strategies.-Analytical Methods Introduction Thermal Analysis NMR Sepctroscopy EXAFS Other Methods (XRM, SEM,TEM scattering methods at nanocrystalline films) Spin-Coating Dip Coating Inkjet Printing and Other Direct Writing Methods(dip point and imprint techniques) Chemical Bath Deposition Polymer Assisted Deposition.-Processing and Crystallization Thermodynamics and Heating Processes Material Systems Dominated by Heterogeneous Nucleation Material Systems Dominated by Homogeneous Nucleation Low Temperature Processing Epitaxial Films Powder Assisted Film Fabrication UV-and E-Beam Direct Patterning of Photosensitive CSD Films Template Controlled Growth.-Functions and Applications Introduction Integrated Capacitors Base Metal Electrodes Polar Oxide Films for MEMS Applications Conducting Films and Electrodes Transparent conducting oxides Superconducting Films Porous Films for Gas Sensors Luminescent Fims.-Appendix Synthesis for Standard material Systems.
280 citations