Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact.
Fabrizio Nichele,Stefano Chesi,Szymon Hennel,Angela Wittmann,Christian Gerl,Werner Wegscheider,Daniel Loss,Daniel Loss,Thomas Ihn,Klaus Ensslin +9 more
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TLDR
The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g factors, which are explained through a tilted magnetic field analysis.Abstract:
We present transport experiments performed in high-quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g factors. Here we find additional effects, namely, the crossing and the anticrossing of spin-split levels depending on subband index and magnetic field direction. Our experimental observations are reconciled in a heavy-hole effective spin-orbit Hamiltonian where cubic- and quadratic-in-momentum terms appear. The spin-orbit components, being of great importance for quantum computing applications, are characterized in terms of magnitude and spin structure. In light of our results, we explain the level-dependent effective g factor in an in-plane field. Through a tilted magnetic field analysis, we show that the quantum point contact out-of-plane g factor saturates around the predicted 7.2 bulk value.read more
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The germanium quantum information route
Giordano Scappucci,Christoph Kloeffel,Floris A. Zwanenburg,Daniel Loss,Maksym Myronov,Jian-Jun Zhang,Silvano De Franceschi,Georgios Katsaros,Menno Veldhorst +8 more
TL;DR: In the effort to develop disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing and transmitting quantum information as mentioned in this paper, such as a universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor hybrid quantum systems.
Journal ArticleDOI
The germanium quantum information route
Giordano Scappucci,Christoph Kloeffel,Floris A. Zwanenburg,Daniel Loss,Maksym Myronov,Jian-Jun Zhang,Silvano De Franceschi,Georgios Katsaros,Menno Veldhorst +8 more
TL;DR: In this article, the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective are introduced and a review of the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconducting pairing correlations.
Journal ArticleDOI
Direct Rashba spin-orbit interaction in Si and Ge nanowires with different growth directions
TL;DR: In this paper, the spin-orbit energies of Si and Ge nanowires of rectangular cross section were calculated and their parameter dependences analyzed, including growth directions, dimensions, strain, and electric and magnetic fields.
Journal ArticleDOI
Hybridization of Subgap States in One-Dimensional Superconductor-Semiconductor Coulomb Islands
Eoin O'Farrell,Asbjorn Drachmann,Michael Hell,Michael Hell,Antonio Fornieri,Alexander M. Whiticar,E. Hansen,Sergei Gronin,Geoff Gardner,Candice Thomas,Michael J. Manfra,Karsten Flensberg,Charles Marcus,Fabrizio Nichele +13 more
TL;DR: Measurements of one-dimensional superconductor-semiconductor Coulomb islands fabricated by gate confinement of a two-dimensional InAs heterostructure with an epitaxial Al layer are presented, consistent with a picture of overlapping Majorana zero modes in finite wires.
Journal ArticleDOI
Generating a Topological Anomalous Hall Effect in a Nonmagnetic Conductor: An In-Plane Magnetic Field as a Direct Probe of the Berry Curvature.
TL;DR: The anomalous planar Hall effect (APHE) as mentioned in this paper provides a direct transport probe of the Berry curvature accessible in all $p$-type semiconductors, while there is no Lorentz force and hence no ordinary Hall effect.
References
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Book
Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
TL;DR: The Extended Kane Model has been used to model the band structure of Semiconductors as mentioned in this paper, and it has been shown that the Extended Kane model can be used to explain spin-orbit coupling effects.
Book
Semiconductor Nanostructures: Quantum states and electronic transport
TL;DR: In this paper, the authors studied the effect of quantum mechanics on semiconductor nanostructures and showed that interference effects in two-dimensional quantum point contacts can affect the performance of the transmission phase.
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