Journal ArticleDOI
Circuit dependence of fundamental power in a multifrequency Gunn oscillator
A. Das,P. C. Rakshit,H. Paria +2 more
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TLDR
In this paper, the influence of second harmonic frequency termination on fundamental output power has been experimentally investigated for Gunn diodes generating simultaneous oscillations, and it was found that the fundamental power can be enhanced by a factor of 2 to 3 throughout the whole range of delayed domain mode by controlling the load parameter at the second-harmonic frequency.Abstract:
The influence of a second harmonic frequency termination on fundamental output power has been experimentally investigated for Gunn diodes generating simultaneous oscillations. It is found that the fundamental power can be enhanced by a factor of 2 to 3 throughout the whole range of delayed domain mode by controlling the load parameter at the second harmonic frequency. The experimental observations also suggest that the oscillation at any frequency may be suppressed by the proper positioning of tho Gunn diode in the co-axial resonator. A tentative theory to explain the increase of fundamental power over a wide range of frequencies is also presented, taking into consideration the fundamental and the harmonic circuit parameters for Gunn devices operated in a resonator.read more
Citations
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Journal ArticleDOI
The influence of the second harmonic on the fundamental frequency negative conductance of GaAs Gunn devices
TL;DR: In this paper, the parametric interaction between the second harmonic and the fundamental frequency of X-band GaAs has been studied with the help of a coaxial resonator, and an increase in microwave voltage output of the fundamental has been observed by loading the device properly at the second harmonics.
References
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Journal ArticleDOI
High-efficiency operation of a Gunn oscillator in the domain mode
G.S. Kino,I. Kuru +1 more
TL;DR: In this paper, it was shown that a voltage waveform consisting of only a fundamental and second harmonic component could give efficiencies in the 20-28 percent range, as much as a factor of 3 larger than for a simple sinusoid.
Journal ArticleDOI
Some aspects of Gunn effect oscillators
P.N. Robson,S.M. Mahrous +1 more
TL;DR: A tentative theory to explain the wide tuning range observed when Gunn specimens are placed in a suitable cavity resonator (in some cases almost one octave) is advanced in this paper, with limited confirmation of the theory.
Journal ArticleDOI
Extension of the Gunn-effect theory given by Robson and Mahrous
TL;DR: In this paper, the power output and efficiency of a cavity-controlled Gunn-effect oscillator were derived using Fourier analysis, where the applied bias voltage was equal to 1.9 times the threshold voltage and the load resistance was 8.6 times the low field resistance of the GaAs wafer.
Journal ArticleDOI
Resonant-circuit operation of Gunn diodes: a self-pumped parametric oscillator
TL;DR: In this paper, it was shown that the resonant-circuit behavior of a Gunn diode lies in the impedance presented to the diode at the second harmonic of oscillation.
Journal ArticleDOI
Load Dependence of Gunn-Oscillator Performance
TL;DR: In this article, a detailed analysis of an experimental resonator as a basis for determining the output power and the tuning range of Gunn oscillators as functions of the fundamental resonant-load resistance is presented.