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Proceedings ArticleDOI

Circuit model of UTC-PD with high power and enhanced bandwidth technique

27 Oct 2014-pp 91-92
TL;DR: A novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent is shown.
Abstract: An electrical equivalent circuit model of InGaAs/InP uni travelling carrier photodiode is presented. The model is suitable to be built on any electrical circuit simulator to perform design and optimize the device parameters. We have shown a novel technique of increasing bandwidth of the device by inserting a small shunt inductance in series with the load without sacrificing the device output photocurrent and linearity to a large extent.
Citations
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Proceedings ArticleDOI
01 Sep 2015
TL;DR: In this article, a time domain model of bulk InGaAs/InP uni-traveling carrier photodiode (UTC-PD) is developed in terms of integral carrier density rate equation.
Abstract: A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode (UTC-PD) is developed in terms of integral carrier density rate equation The wavelength dependent responsivity at different absorption width is derived from the model which shows good agreement with the experimental results The bandwidth of the device is estimated from time dependent photocurrent response

2 citations


Cites background from "Circuit model of UTC-PD with high p..."

  • ...ni-traveling carrier photodiode (UTC-PD) plays an important role in millimeter wave and terahertz generation as its bandwidth has been expanded in that region over ordinary photodiode with innovative ideas [1-2]....

    [...]

  • ...Incorporating the effect of self-induced field [2] in UTC-PD, the time dependent photocurrent response of the device is derived from which the bandwidth can be estimated....

    [...]

  • ...The second term is the carrier recombination rate which varies linearly with carrier density and the third term represents photogenerated carriers under drift motion [1] and is the self induced electric field in UTC-PD [2]....

    [...]

Journal ArticleDOI
TL;DR: In this paper, a time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is developed in terms of coupled differential equations of incident photon flux and photo generated carrier density rates.
Abstract: A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is developed in terms of coupled differential equations of incident photon flux and photo generated carrier density rates. For fast computation of model parameters linear approximation of material absorption coefficient is made with carrier density. Wavelength and bias voltage dependent responsivity is well demonstrated by the model and their values at different absorption layer widths agree well with the experimental results. Optical power induced output photocurrent saturation is also explained. Furthermore, from the temporal variation of output photocurrent, estimation of device bandwidth is shown.

1 citations


Cites background from "Circuit model of UTC-PD with high p..."

  • ...ni-traveling carrier photodiode (UTC-PD) plays an important role in millimeter wave and terahertz generation as its bandwidth has been expanded in that region over ordinary photodiode with innovative ideas [1-2]....

    [...]

  • ...Incorporating the effect of self-induced field [2] in UTC-PD, the time dependent photocurrent response of the device is derived from which the bandwidth can be estimated....

    [...]

  • ...The second term is the carrier recombination rate which varies linearly with carrier density and the third term represents photogenerated carriers under drift motion [1] and is the self induced electric field in UTC-PD [2]....

    [...]

Proceedings ArticleDOI
15 Jun 2015
TL;DR: In this article, a traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation.
Abstract: A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum mechanical principle. Output photocurrent response with time is found in close agreement with the experimental value.

Additional excerpts

  • ...Frequency domain model of UTC-PD has been developed by several authors [2-4] to examine the possibility of obtaining improved device bandwidth [5], high photocurrent and linearity....

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Book ChapterDOI
19 Dec 2019
TL;DR: In this article, a small signal equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and parasitics are included with it.
Abstract: A small signal equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and parasitics are included with it The technique to obtain scattering parameters from circuit model is given and simulation results are in good agreement with the measurement
References
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Journal ArticleDOI
18 Apr 2003
TL;DR: In this paper, a millimetre wave uni-travelling-carrier photodiode with a monolithically integrated matching (impedance transform) circuit utilising a coplanar-waveguide short stub is presented.
Abstract: The design and characterisation of a millimetre wave uni-travelling-carrier photodiode with a monolithically integrated matching (impedance transform) circuit utilising a coplanar-waveguide short stub are presented. The device with the matching circuit shows about 50% higher efficiency at 100 GHz than the one without it. The frequency response was characterised through time-domain measurement by means of an electro-optic sampling technique. The 1 dB down bandwidth of the device is as wide as 40 GHz, and the frequency response characteristics are in good agreement with circuit model calculations. The maximum saturation output power is 20.8 mW at 100 GHz for a bias voltage of -3 V, which is the highest output power ever generated directly from a photodiode in the W-band.

104 citations

Proceedings ArticleDOI
09 Jul 2001
TL;DR: Photoresponse characteristics of InP/InGaAs UTC-PDs, which depend on device parameters and operation conditions, are discussed and theoretical analysis for calculating 3-dB-down bandwidth as a function of operation current is presented.
Abstract: Uni-traveling-carrier photodiode (UTC-PD) is a newly developed high-speed photodiode for generating high output current. The high saturation current is realized by its operation mode in which only electrons are used as active carriers. The bandwidth of a UTC-PD increases with increasing photocurrent level, which results from the fact that electron transport changes from diffusive to drift/diffusive motion due to the self-induced field in the absorption layer. In this report, photoresponse characteristics of InP/InGaAs UTC-PDs, which depend on device parameters and operation conditions, are discussed. Theoretical analysis for calculating 3-dB-down bandwidth as a function of operation current is also presented. The charge-control model for photodiodes, used in this study, allows us to predict small-signal bandwidth by numerical calculation.

54 citations

Journal ArticleDOI
TL;DR: In this paper, the third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup.
Abstract: The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a two-tone setup. At 0.3-GHz modulation frequency and photocurrents above 40 mA, the third-order local intercept point (IP3) reaches a record-high of 52 dBm and remains above 35 dBm up to the photodiode's 3-dB bandwidth. A simple equivalent circuit model with a voltage-dependent responsivity and a voltage- and photocurrent-dependent junction capacitance is used to explain the frequency characteristics of the intermodulation distortions.

23 citations

Journal ArticleDOI
TL;DR: In this article, a 1.2-mum-thick p-doped absorption layer was used to achieve high responsivity and good linearity under high power operation for uni-traveling-carrier photodiodes.
Abstract: High responsivity backside-illuminated uni-traveling-carrier photodiodes (PDs) with a 1.2-mum-thick p-doped absorption layer are demonstrated. The fabricated PDs achieve simultaneously high speed, high responsivity, and good linearity under high-power operation. The measured responsivity at 1.55 mum is larger than 0.83 A/W at low photocurrent and increases up to 1 A/W at 75 mA. The measured bandwidth increases from 9 GHz at 1 mA up to 24 and 29 GHz at 50 mA, for 25- and 20-mum-diameter PDs, respectively. Good linearity is demonstrated with a third-order intercept point of 30 dBm at 10 GHz and 50 mA.

16 citations

Proceedings ArticleDOI
01 Dec 2009
TL;DR: In this paper, strong bandwidth enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4mA) and zero-bias operation.
Abstract: Strong bandwidth-enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4mA) and zero-bias operation. Equivalent-circuit-modeling results indicate that such effect is due to self-induced-field inside absorption layer, which benefits devices' high-speed performance under zero-power-consumption operation.

4 citations