scispace - formally typeset
Journal ArticleDOI

Closed-form expressions for interconnection delay, coupling, and crosstalk in VLSIs

Takayasu Sakurai
- 01 Jan 1993 - 
- Vol. 40, Iss: 1, pp 118-124
Reads0
Chats0
TLDR
In this paper, a closed-form formula for a waveform of the RC interconnection line with practical boundary conditions is derived, and the optimum linewidth that minimizes RC delay and the trend of RC delay in the scaled-down VLSIs are discussed.
Abstract
A closed-form formula for a waveform of the RC interconnection line with practical boundary conditions is derived. Expressions are also derived for the voltage slope and transition time of the RC interconnection and for coupling capacitance and crosstalk voltage height, which can be used in VLSI designs. Using the expressions, the optimum linewidth that minimizes RC delay and the trend of RC delay in the scaled-down VLSIs are discussed. >

read more

Citations
More filters
Journal ArticleDOI

Interconnect limits on gigascale integration (GSI) in the 21st century

TL;DR: This result emphasizes that changes in design, technology, and architecture are needed to cope with the onslaught of wiring demands and one potential solution is 3-D integration of transistors, which is expected to significantly improve interconnect performance.
Patent

Characterization adn reduction of variation for integrated circuits

TL;DR: In this paper, a method and system are described to reduce process variation as a result of the semiconductor processing of films in integrated circuit manufacturing processes, which use process variation and electrical impact to modify the design and manufacture of integrated circuits.
Journal ArticleDOI

3-D Topologies for Networks-on-Chip

TL;DR: An analytic model for the zero-load latency of each network that considers the effects of the topology on the performance of a 3D NoC is developed and the number of physical planes used to integrate the functional blocks of the network is evaluated for both the latency and power consumption of a network.
Patent

Characterization and verification for integrated circuit designs

TL;DR: In this paper, the chip-level features of a design of an integrated circuit are verified for manufacture within focus limitations of a lithographic tool, based on the relative predicted variations.
Patent

Dummy fill for integrated circuits

TL;DR: In this paper, a method and system are described to reduce process variation as a result of the electrochemical deposition (ECD), also referred to as electrochemical plating (ECP), and chemical mechanical polishing (CMP) processing of films in integrated circuit manufacturing processes.
References
More filters
Journal ArticleDOI

The Transient Response of Damped Linear Networks with Particular Regard to Wideband Amplifiers

TL;DR: It is found possible to define delay time and rise time in such a way that these quantities can be computed very simply from the Laplace system function of the network.
Journal ArticleDOI

Alpha-power law MOSFET model and its applications to CMOS inverter delay and other formulas

TL;DR: In this paper, an alpha-power-law MOS model that includes the carrier velocity saturation effect, which becomes prominent in short-channel MOSFETs, is introduced and closed-form expressions for the delay, short-circuit power, and transition voltage of CMOS inverters are derived.
Journal ArticleDOI

Simple formulas for two- and three-dimensional capacitances

TL;DR: In this article, simple formulas for wiring capacitances in VLSI, including two-and/or three-dimensional effects, were proposed for a wide range of wire thickness, wire width, and interwire spacing.
Journal ArticleDOI

Approximation of wiring delay in MOSFET LSI

TL;DR: Two approximation methods for wiring delay in MOS LSI are studied and the widely used L ladder circuit model is found to be a poor approximation, while /spl pi and T ladder circuit models give satisfactory results.