CMOS active pixel image sensor
TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
Abstract: A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 /spl mu/m double-poly, double-metal foundry CMOS process and is realized as a 128/spl times/128 array of 40 /spl mu/m/spl times/40 /spl mu/m pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor applications. >
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TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract: CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
1,182 citations
Patent•
12 Mar 2003TL;DR: In this paper, an imaging device is formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary MOS semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate and a charge coupled device section formed on the substrate adjacent the photrogate having a sensing node connected to the output transistor and at least one charge coupled
Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
714 citations
Journal Article•
TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract: CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
693 citations
Patent•
26 Oct 2015
TL;DR: In this article, a forward-facing vision system for a vehicle includes a forwardfacing camera disposed in a windshield electronics module attached at a windshield of the vehicle and viewing through the windshield.
Abstract: A forward-facing vision system for a vehicle includes a forward-facing camera disposed in a windshield electronics module attached at a windshield of the vehicle and viewing through the windshield. A control includes a processor that, responsive to processing of captured image data, detects taillights of leading vehicles during nighttime conditions and, responsive to processing of captured image data, detects lane markers on a road being traveled by the vehicle. The control, responsive to lane marker detection and a determination that the vehicle is drifting out of a traffic lane, may control a steering system of the vehicle to mitigate such drifting, with the steering system manually controllable by a driver of the vehicle irrespective of control by the control. The processor, based at least in part on detection of lane markers via processing of captured image data, determines curvature of the road being traveled by the vehicle.
615 citations
Patent•
02 Jan 2001TL;DR: In this paper, a single substrate device is formed to have an image acquistition device and a controller, and the controller on the substrate controls the system operation, which can be used for image acquisition.
Abstract: Single substrate device is formed to have an image acquistition device and a controller. The controller on the substrate controls the system operation.
495 citations
References
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12 Jul 1993
TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Abstract: Charge-coupled devices (CCDs) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer--the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response. With the active pixel, the signal is driven from the pixel over metallic wires rather than being physically transported in the semiconductor. This paper makes a case for the development of APS technology. The state of the art is reviewed and the application of APS technology to future space-based scientific sensor systems is addressed.
457 citations
TL;DR: The characterization of surface channel charge-coupled device line imagers with front-surface imaging, interline transfer, and 2-phase stepped oxide, silicon-gate CCD registers is presented in this paper.
Abstract: The characterization of surface channel charge-coupled device line imagers with front-surface imaging, interline transfer, and 2-phase stepped oxide, silicon-gate CCD registers is presented. The analysis, design, and evaluation of 1/spl times/64 CCD line arrays are described in terms of their performance at low light levels. The authors describe the responsivity, resolution, spectral, and noise measurements on silicon-gate CCD sensors and CCD interline shift-registers. The influence of transfer inefficiency and electrical fat-zero insertion on resolution and noise is described at low light levels.
342 citations
TL;DR: In this article, a chip implementing random scan was designed, fabricated, and tested, which covers the basic requirements for random access and separation between the sampling and reading processes, in this way, a repeated reading of any pixel at any time can take place.
Abstract: A chip implementing random scan was designed, fabricated, and tested. The chip covers the basic requirements for random access and separation between the sampling and reading processes. In this way, a repeated reading of any pixel at any time can take place. The chip includes an 80*80 matrix of basic cells. Each cell consists of two stages: The first is based on a switch, whereas the second includes a buffer. The chip was fabricated in a 3- mu m CMOS process. It was found to operate functionally. However, the use of a standard process gave rise to the crosstalk phenomenon, which has yet to be overcome. >
170 citations
Journal Article•
TL;DR: A chip implementing random scan was designed, fabricated, and tested and was found to operate functionally, however, the use of a standard process gave rise to the crosstalk phenomenon, which has yet to be overcome.
94 citations
TL;DR: The potential of on-chip read/write analog frame memory for image transformation and frame-to-frame processing is discussed and a new pipelined vector pixel processor architecture for medium density infrared staring focal plane arrays is described.
Abstract: Architectures for focal plane image processing are discussed. On-chip image preprocessing for solid-state imagers using analog CCD circuits is described for low, medium, and high density detector arrays. A spatially parallel architecture for low density, high throughput applications is described. For sparse illumination or event detection, a content-addressable architecture is proposed. A new pipelined vector pixel processor architecture for medium density infrared staring focal plane arrays is described. Neighborhood reconstruction during serial readout of high density TV-quality imagers for a pixel processor is considered using delay and analog frame memory techniques. The potential of on-chip read/write analog frame memory for image transformation and frame-to-frame processing is discussed.
79 citations