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Proceedings Article

CMOS ASIC Structures for an Integrated Pulsed Time-of-Flight Laser Radar

01 Sep 1993-Vol. 1, pp 142-145
TL;DR: In this article, an integrated pulsed time-of-flight laser rangefinder with a cm/dm-level measurement accuracy can be realized based on these circuit blocks with 1.2?m CMOS technology.
Abstract: Transimpedance and postamplifier structure and an interpolating time interval measurement circuit have been realized with 1.2 ?m CMOS technology. Measurement results suggest that an integrated pulsed time-of-flight laser rangefinder with a cm/dm-level measurement accuracy can be realized based on these circuit blocks.
Citations
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Proceedings ArticleDOI
30 May 1994
TL;DR: A time measurement circuit based on the principle of the multiple-phase oscillator is presented, realized with a delay line ring oscillator, resulting in a compact, simple structure.
Abstract: A time measurement circuit based on the principle of the multiple-phase oscillator is presented. The multiple phases are realized with a delay line ring oscillator, resulting in a compact, simple structure. The circuit is implemented in 5 V, 1.2 um CMOS process. The measured single-shot resolution is 1.5 ns (sigma-value) and the maximum measured error is 4 ns in the measurement range 5 ns -10 us with temperature variation between -40 to +60/spl deg/C and supply voltage variation between 4.5 and 5.5 V. Nominal current consumption is 2.5 mA. >

8 citations

Proceedings ArticleDOI
16 Aug 1993
TL;DR: In this paper, an integrated time measurement unit for use in portable, low power laser rangefinding devices is described, implemented with 1.2 /spl mu/m CMOS technology and has a measurement range of 10 us and an accuracy of /spl plusmn/0.9 ns.
Abstract: An integrated time measurement unit for use in portable, low power laser rangefinding devices is described. It is implemented with 1.2 /spl mu/m CMOS technology and has a measurement range of 10 us and an accuracy of /spl plusmn/0.2 ns over the temperature range 0...60/spl deg/C and supply voltage range 4.5...5.5 V. Single shot time measurement resolution is /spl plusmn/0.9 ns. Nominal current consumption is 3 mA. >

3 citations

Proceedings ArticleDOI
30 May 1994
TL;DR: An integrated CMOS differential amplifier channel consisting of a transimpedance preamplifier, postamplifiers and gain control circuitry has been designed for the receiver of a pulsed time-of-flight laser range finding device.
Abstract: An integrated CMOS differential amplifier channel consisting of a transimpedance preamplifier, postamplifiers and gain control circuitry has been designed for the receiver of a pulsed time-of-flight laser range finding device. The amplifier channel has a measured total transimpedance of Z/sub t//spl ap/1.27 M/spl Omega/ with a bandwidth of BW/spl ap/60 MHz and an input-referred noise current of i/sub ni//spl ap/4.5 pA//spl radic/(Hz). >

3 citations

References
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Journal ArticleDOI
01 Feb 1963
TL;DR: In this article, a design technique is developed which apparently overcomes all the limitations of common-emitter transistor video amplifiers, based on the use of the impedance mismatch which occurs between stages having alternate series and shunt feedback.
Abstract: A design technique is developed which apparently overcomes all the limitations of common-emitter transistor video amplifiers. This technique is based on the use of the impedance mismatch which occurs between stages having alternate series and shunt feedback. It is shown that the realizable gain-bandwidth product is in excess of 0.9ωT, the gain and bandwidth are insensitive to transistor parameter variations, and large output voltages may be obtained. The equations for both gain and bandwidth are developed in a form which is particularly suited to practical design work, and are accurate despite their comparative simplicity.In addition to the main treatment, the design of terminal stages and of multi-stage feedback loops is considered in detail, and some aspects of the theory of noise in feedback amplifiers are discussed.Two complete design examples are described. These are a 20dB 25Mc/s amplifier for 75Ω lines using two OC170 transistors, and a vidicon head-amplifier which achieves 3 × 10−9 A noise at the input in a 5 Mc/s bandwidth.

347 citations

Journal ArticleDOI
TL;DR: A method for implementing floating voltage-controlled resistors in CMOS technology is proposed that takes advantage of the cancellation of the first-order nonlinearities of two MOS transistors in physical proximity.
Abstract: A method for implementing floating voltage-controlled resistors in CMOS technology is proposed. The method takes advantage of the cancellation of the first-order nonlinearities of two MOS transistors in physical proximity.

148 citations

Journal ArticleDOI
TL;DR: In this paper, a general-purpose CMOS optical receiver that operates at data rates from 1 to 50 Mb/s has been fabricated in a 1.75- mu m CMOS process.
Abstract: A general-purpose CMOS optical receiver that operates at data rates from 1 to 50 Mb/s has been fabricated in a 1.75- mu m CMOS process. The technology choice resulted in a high level of integration compared with similar bipolar technology receivers. The measured minimum signal current for a 10/sup -9/ bit error rate at 50 Mb/s is 48-nA r.m.s. Automatic gain control gives the receiver an electrical input dynamic range of greater than 60 dB. The outputs are TTL (transistor-transistor logic)-compatible and the chip dissipates less than 500 mW when switching at maximum speed. The die area is 16 mm/sup 2/. A comprehensive noise analysis of the receiver front end provides insight into the design tradeoffs of optical receiver preamplifiers. A wideband precision amplifier used in the linear channel is discussed in detail. A simple method for recovering low-frequency signal information lost in AC coupling is described. >

47 citations

Proceedings ArticleDOI
01 Mar 1992
TL;DR: In this article, the authors presented typical construction and performance data for a pulsed time-of-flight laser rangefinding device intended for industrial measurements and showed that using a laser diode transmitter with a peak power of 5 - 15 W, a measurement range of a few tens of meters can be attained with respect to a noncooperative target.
Abstract: Typical construction and performance data for a pulsed time-of-flight laser rangefinding device intended for industrial measurements is presented. It is shown that by using a laser diode transmitter with a peak power of 5 - 15 W, a measurement range of a few tens of meters can be attained with respect to a noncooperative target. The available single shot resolution reaches mm-level in a fraction of a second. Accuracy depends greatly on the construction and adjustment of the device and levels of better than +/- 3 mm can be achieved in the above measurement range. Various construction details and other factors affecting to the available resolution and accuracy are discussed.

41 citations

Proceedings ArticleDOI
11 Jun 1991
TL;DR: The authors present the basic advantages and limitations of using integrated CMOS delay lines for the digitization of short time intervals and the delay lines considered are found to be most suitable for applications where better than 8-bit accuracy and 0.5-10-ns single-shot resolution is required.
Abstract: The authors present the basic advantages and limitations of using integrated CMOS delay lines for the digitization of short time intervals. A 6-7-bit accuracy and a single-shot resolution of 0.5-10 ns are demonstrated using fully integrated, tapped and voltage controlled CMOS delay lines as a time base for the measurement. The delay lines considered are found to be most suitable for applications where better than 8-bit accuracy and 0.5-10-ns single-shot resolution is required. The accuracy is limited by the poor matching of minimum-sized structures, which causes more than +or-0.5 lsb nonlinearity when the length of the delay line exceeds about 100 elements (7 bits). >

32 citations