CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects
TL;DR: In this paper, the authors demonstrate the first monolithically integrated CMOS-compatible source by creating an optical parametric oscillator formed by a silicon nitride ring resonator on silicon.
Abstract: Silicon photonics enables the fabrication of on-chip, ultrahigh-bandwidth optical networks that are critical for the future of microelectronics1,2,3 Several optical components necessary for implementing a wavelength division multiplexing network have been demonstrated in silicon However, a fully integrated multiple-wavelength source capable of driving such a network has not yet been realized Optical amplification, a necessary component for lasing, has been achieved on-chip through stimulated Raman scattering4,5, parametric mixing6 and by silicon nanocrystals7 or nanopatterned silicon8 Losses in most of these structures have prevented oscillation Raman oscillators have been demonstrated9,10,11, but with a narrow gain bandwidth that is insufficient for wavelength division multiplexing Here, we demonstrate the first monolithically integrated CMOS-compatible source by creating an optical parametric oscillator formed by a silicon nitride ring resonator on silicon The device can generate more than 100 new wavelengths with operating powers below 50 mW This source can form the backbone of a high-bandwidth optical network on a microelectronic chip A monolithically integrated CMOS-compatible source is demonstrated using an optical parametric oscillator based on a silicon nitride ring resonator on silicon Generating more than 100 wavelengths simultaneously and operating at powers below 50 mW, scientists say that it may form the basis of an on-chip high-bandwidth optical network
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TL;DR: A new optical frequency comb generation principle has emerged that uses parametric frequency conversion in high resonance quality factor (Q) microresonators, permitting an increased number of comb applications, such as in astronomy, microwave photonics, or telecommunications.
Abstract: The series of precisely spaced, sharp spectral lines that form an optical frequency comb is enabling unprecedented measurement capabilities and new applications in a wide range of topics that include precision spectroscopy, atomic clocks, ultracold gases, and molecular fingerprinting. A new optical frequency comb generation principle has emerged that uses parametric frequency conversion in high resonance quality factor (Q) microresonators. This approach provides access to high repetition rates in the range of 10 to 1000 gigahertz through compact, chip-scale integration, permitting an increased number of comb applications, such as in astronomy, microwave photonics, or telecommunications. We review this emerging area and discuss opportunities that it presents for novel technologies as well as for fundamental science.
1,660 citations
TL;DR: In this article, temporal dissipative solitons are observed in a nonlinear, high-finesse, optical microresonator driven by a continuous-wave laser, enabling ultrashort pulses to be generated in spectral regimes lacking broadband laser gain media and saturable absorbers.
Abstract: Temporal dissipative solitons are observed in a nonlinear, high-finesse, optical microresonator driven by a continuous-wave laser. This approach enables ultrashort pulses to be generated in spectral regimes lacking broadband laser gain media and saturable absorbers, making it potentially useful for applications in broadband spectroscopy, telecommunications, astronomy and low-phase-noise microwave generation.
1,602 citations
Cites background from "CMOS-compatible multiple-wavelength..."
...In combination with chip-scale[11, 12] integration this opens the route towards compact, stable and low cost ultra-short pulse sources[2], which can also operate in wavelength regimes (such as the mid-infrared[27]), where broadband laser gain media do not exist....
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TL;DR: In this paper, the authors review recent progress in non-silicon CMOS-compatible platforms for nonlinear optics, with a focus on Si3N4 and Hydex®.
Abstract: Nonlinear photonic chips can generate and process signals all-optically with far superior performance to that possible electronically — particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics, its high two-photon absorption at telecommunication wavelengths poses a fundamental limitation. We review recent progress in non-silicon CMOS-compatible platforms for nonlinear optics, with a focus on Si3N4 and Hydex®. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement. We highlight their potential future impact as well as the challenges to achieving practical solutions for many key applications. This article reviews recent progress in the use of silicon nitride and Hydex as non-silicon-based CMOS-compatible platforms for nonlinear optics. New capabilities such as on-chip optical frequency comb generation, ultrafast optical pulse generation and measurement using these materials, and their potential future impact and challenges are covered.
1,218 citations
TL;DR: In this article, a review of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics is presented. But the authors do not discuss the nonlinearities in silicon.
Abstract: The nonlinearities in silicon are diverse. This Review covers the wealth of nonlinear effects in silicon and highlights the important applications and technological solutions in nonlinear silicon photonics. The increasing capability for manufacturing a wide variety of optoelectronic devices from polymer and polymer–silicon hybrids, including transmission fibre, modulators, detectors and light sources, suggests that organic photonics has a promising future in communications and other applications.
1,123 citations
TL;DR: The development of microresonator-generated frequency combs is reviewed to map out how understanding and control of their generation is providing a new basis for precision technology and establish a nascent research field at the interface of soliton physics, frequency metrology, and integrated photonics.
Abstract: The development of compact, chip-scale optical frequency comb sources (microcombs) based on parametric frequency conversion in microresonators has seen applications in terabit optical coherent communications, atomic clocks, ultrafast distance measurements, dual-comb spectroscopy, and the calibration of astophysical spectrometers and have enabled the creation of photonic-chip integrated frequency synthesizers. Underlying these recent advances has been the observation of temporal dissipative Kerr solitons in microresonators, which represent self-enforcing, stationary, and localized solutions of a damped, driven, and detuned nonlinear Schrodinger equation, which was first introduced to describe spatial self-organization phenomena. The generation of dissipative Kerr solitons provide a mechanism by which coherent optical combs with bandwidth exceeding one octave can be synthesized and have given rise to a host of phenomena, such as the Stokes soliton, soliton crystals, soliton switching, or dispersive waves. Soliton microcombs are compact, are compatible with wafer-scale processing, operate at low power, can operate with gigahertz to terahertz line spacing, and can enable the implementation of frequency combs in remote and mobile environments outside the laboratory environment, on Earth, airborne, or in outer space.
997 citations
Cites background from "CMOS-compatible multiple-wavelength..."
...con nitride (Si3N4)[17, 18, 19], Hydex glass[20], as well as aluminum nitride [21] or diamond[22]....
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References
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TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
2,336 citations
"CMOS-compatible multiple-wavelength..." refers result in this paper
...Combining this device with previously demonstrated electro-optic component...
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TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
Abstract: Adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Silicon is an indirect-bandgap semiconductor and so is an inefficient emitter of light. For this reason, integration of optically functional elements with silicon microelectronic circuitry has largely been achieved through the use of direct-bandgap compound semiconductors. For optoelectronic applications, the key device is the light source--a laser. Compound semiconductor lasers exploit low-dimensional electronic systems, such as quantum wells and quantum dots, as the active optical amplifying medium. Here we demonstrate that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix. Net optical gain is seen in both waveguide and transmission configurations, with the material gain being of the same order as that of direct-bandgap quantum dots. We explain the observations using a model based on population inversion of radiative states associated with the Si/SiO2 interface. These findings open a route to the fabrication of a silicon laser.
2,204 citations
TL;DR: This work reports a substantially different approach to comb generation, in which equally spaced frequency markers are produced by the interaction between a continuous-wave pump laser of a known frequency with the modes of a monolithic ultra-high-Q microresonator via the Kerr nonlinearity.
Abstract: Optical frequency combs provide equidistant frequency markers in the infrared, visible and ultraviolet, and can be used to link an unknown optical frequency to a radio or microwave frequency reference. Since their inception, frequency combs have triggered substantial advances in optical frequency metrology and precision measurements and in applications such as broadband laser-based gas sensing and molecular fingerprinting. Early work generated frequency combs by intra-cavity phase modulation; subsequently, frequency combs have been generated using the comb-like mode structure of mode-locked lasers, whose repetition rate and carrier envelope phase can be stabilized. Here we report a substantially different approach to comb generation, in which equally spaced frequency markers are produced by the interaction between a continuous-wave pump laser of a known frequency with the modes of a monolithic ultra-high-Q microresonator via the Kerr nonlinearity. The intrinsically broadband nature of parametric gain makes it possible to generate discrete comb modes over a 500-nm-wide span (approximately 70 THz) around 1,550 nm without relying on any external spectral broadening. Optical-heterodyne-based measurements reveal that cascaded parametric interactions give rise to an optical frequency comb, overcoming passive cavity dispersion. The uniformity of the mode spacing has been verified to within a relative experimental precision of 7.3 x 10(-18). In contrast to femtosecond mode-locked lasers, this work represents a step towards a monolithic optical frequency comb generator, allowing considerable reduction in size, complexity and power consumption. Moreover, the approach can operate at previously unattainable repetition rates, exceeding 100 GHz, which are useful in applications where access to individual comb modes is required, such as optical waveform synthesis, high capacity telecommunications or astrophysical spectrometer calibration.
1,950 citations
TL;DR: Net on/off gain over a wavelength range of 28 nm is demonstrated through the optical process of phase-matched four-wave mixing in suitably designed SOI channel waveguides, allowing for the implementation of dense wavelength division multiplexing in an all-silicon photonic integrated circuit.
Abstract: The development of silicon-compatible optical components that simultaneously amplify and process a broad range of wavelength channels is critical for future data communication technology based on photonic chips. Until now, such devices have only been able to amplify a single wavelength channel. Now, using nanoscale silicon waveguides designed for the purpose, Foster et al. have achieved broadband amplification. The key is the exploitation of a nonlinear optical effect known as four-wave mixing. This process can also be used for other all-optical functions previously only possible in extended lengths of optical fibre. Phase-matched four-wave mixing can take place with high efficiency in a suitably designed silicon waveguide — this advance could allow for the implementation of dense wavelength channels for optical processing in an all-silicon photonic chip. Developing an optical amplifier on silicon is essential for the success of silicon-on-insulator (SOI) photonic integrated circuits. Recently, optical gain with a 1-nm bandwidth was demonstrated using the Raman effect1,2,3,4,5,6,7,8,9, which led to the demonstration of a Raman oscillator10,11, lossless optical modulation12 and optically tunable slow light13. A key strength of optical communications is the parallelism of information transfer and processing onto multiple wavelength channels. However, the relatively narrow Raman gain bandwidth only allows for amplification or generation of a single wavelength channel. If broad gain bandwidths were to be demonstrated on silicon, then an array of wavelength channels could be generated and processed, representing a critical advance for densely integrated photonic circuits. Here we demonstrate net on/off gain over a wavelength range of 28 nm through the optical process of phase-matched four-wave mixing in suitably designed SOI channel waveguides. We also demonstrate wavelength conversion in the range 1,511–1,591 nm with peak conversion efficiencies of +5.2 dB, which represents more than 20 times improvement on previous four-wave-mixing efficiencies in SOI waveguides14,15,16,17. These advances allow for the implementation of dense wavelength division multiplexing in an all-silicon photonic integrated circuit. Additionally, all-optical delays18, all-optical switches19, optical signal regenerators20 and optical sources for quantum information technology21, all demonstrated using four-wave mixing in silica fibres, can now be transferred to the SOI platform.
923 citations
TL;DR: The experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.
Abstract: With the growing use of optoelectronics in information technology, manipulating light is almost as important as manipulating electrons. Unfortunately silicon, workhorse of modern microelectronics, is next to useless in optical applications. There has been a massive effort to overcome silicon's inadequacies, and ways of coaxing silicon to handle light are under development but a key component — the laser — has been problematic. Last year a silicon laser was produced, but it involved metres of optical fibre. Now workers in Intel's research labs have come up with an all-silicon laser on a single chip. The device is compact and readily integrated with other silicon components. The possibility of light generation and/or amplification in silicon has attracted a great deal of attention1 for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron–hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals2,3,4,5, Si/SiO2 superlattices6, erbium-doped silicon-rich oxides7,8,9,10, surface-textured bulk silicon11 and Si/SiGe quantum cascade structures12. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures13,14,15,16,17,18,19,20,21. In fact, net optical gain in the range 2–11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping18,19,20,21. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre22. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.
850 citations