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Open AccessJournal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

Eric R. Fossum
- 01 Oct 1997 - 
- Vol. 44, Iss: 10, pp 1689-1698
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TLDR
In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Abstract
CMOS active pixel sensors (APS) have performance competitive with charge-coupled device (CCD) technology, and offer advantages in on-chip functionality, system power reduction, cost, and miniaturization. This paper discusses the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.

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Citations
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Journal ArticleDOI

Sensitive solution-processed visible-wavelength photodetectors

TL;DR: In this article, a solution-processed photodetector that exhibits D* (normalized detectivity) greater than 5 × 1012 Jones (a unit of detectivity equivalent to cm-Hz1/2 W−1) was presented.
Journal ArticleDOI

A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology

TL;DR: In this article, a novel active pixel sensor (MAPS) for charged particle tracking made in a standard CMOS technology is proposed, which has a special structure, which allows the high detection efficiency required for tracking applications.
Journal ArticleDOI

A 10000 frames/s CMOS digital pixel sensor

TL;DR: In this paper, a 352/spl times/288 pixel CMOS image sensor chip with per-pixel single-slope ADC and dynamic memory in a standard digital 0.18-/spl mu/m CMOS process is described.

Nanoscale CMOS

TL;DR: This paper examines the apparent limits, possible extensions, and applications of CMOS technology in the nanometer regime from the point of view of device physics, device technology, and power consumption and speculate on the future ofCMOS for the coming 15-20 years.
Journal ArticleDOI

A 256/spl times/256 CMOS imaging array with wide dynamic range pixels and column-parallel digital output

TL;DR: A 256x256 CMOS active pixel sensor (APS) is described for an automotive stereo-vision system that simultaneously provides flexibility, user-adjustability, and digital control, with no reduction of fill factor.
References
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Journal ArticleDOI

Charge coupled semiconductor devices

TL;DR: A new semiconductor device concept that consists of storing charge in potential wells created at the surface of a semiconductor and moving the charge over the surface by moving the potential minima is described.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

CMOS active pixel image sensors for highly integrated imaging systems

TL;DR: In this paper, a family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported.
Proceedings ArticleDOI

Active Pixel Sensors: Are CCD's Dinosaurs?

TL;DR: ActivePixel Sensor (APS) as mentioned in this paper is a detector array technology that has at least one active transistor within the pixel unit cell, which eliminates the need for nearly perfect charge transfer, which makes CCD's radiation'soft' and difficult to use under low light conditions, difficult to integrate with on-chip electronics, difficulty to use at low temperatures, and difficulty to manufacture in non-silicon materials that extend wavelength response.
Journal ArticleDOI

CMOS active pixel image sensor

TL;DR: In this paper, a 2.0 /spl mu/m double-poly, double-metal foundry CMOS active pixel image sensor is reported, which uses TTL compatible voltages, low noise and large dynamic range, and is useful in machine vision and smart sensor applications.
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