Compact Ka band Bias Tee Network Using Substrate Integrated Coaxial Line technology
01 Oct 2019-pp 1212-1215
TL;DR: This paper presents Ka- band bias tee network designed in a Substrate Integrated coaxial line environment and results exhibit 0.1 dB insertion loss along with DC isolation 22dB with good impedance matching.
Abstract: This paper presents Ka- band bias tee network designed in a Substrate Integrated coaxial line environment. The proposed circuit operates in the frequency range 31–35 GHz. A series of butterfly stub is used to realize inductor. To implement capacitor, interdigital structure is introduced in the middle layer of SICL. The size of this proposed circuit design is $1.1 \lambda\mathrm{g}\times 0.72 \lambda\mathrm{g}$ , where $\lambda\mathrm{g}$ is guided wavelength at centre frequency of 33 GHz. The proposed results exhibit 0.1 dB insertion loss along with DC isolation 22dB with good impedance matching. The proposed circuit is very much suitable for Ka band active components application.
Citations
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13 Oct 2022
TL;DR: In this article , a detailed design procedure for an S band bias tee used in a high power application is provided, where a substrate with 3.66 relative permittivity and 0.762 mm in thickness is used.
Abstract: A detailed design procedure for an S band bias tee used in a high power application is provided in this paper. A substrate with 3.66 relative permittivity and 0.762 mm in thickness is used. The proposed bias tee design utilizes an RF short-circuit in the form of a radial stub and a λ/4 transformer to implement the RF choke. A capacitor with appropriate specifications are used as the bias tee's DC block to complete the bias tee. To optimize the bias tee's form factor, a meandering approach with mitered lines are used. The resulting bias tee achieved RF - DC isolation, insertion loss, and return loss of better than -20 dB, -0.1 dB, and -24 dB respectively from 2.9 GHz to 3.5 GHz. Evidence of the realized bias tee's functionality is also provided in its utilization on an balanced S band power amplifier.
13 Oct 2022
TL;DR: In this article , a detailed design procedure for an S band bias tee used in a high power application is provided, where a substrate with 3.66 relative permittivity and 0.762 mm in thickness is used.
Abstract: A detailed design procedure for an S band bias tee used in a high power application is provided in this paper. A substrate with 3.66 relative permittivity and 0.762 mm in thickness is used. The proposed bias tee design utilizes an RF short-circuit in the form of a radial stub and a λ/4 transformer to implement the RF choke. A capacitor with appropriate specifications are used as the bias tee's DC block to complete the bias tee. To optimize the bias tee's form factor, a meandering approach with mitered lines are used. The resulting bias tee achieved RF - DC isolation, insertion loss, and return loss of better than -20 dB, -0.1 dB, and -24 dB respectively from 2.9 GHz to 3.5 GHz. Evidence of the realized bias tee's functionality is also provided in its utilization on an balanced S band power amplifier.
References
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TL;DR: In this article, an analysis of the frequency response of interdigital capacitors, which leads to an optimal design, along with an expression for their static gap capacitance, is given in terms of its geometry which consists of a planar interdigital thin-filrn conductor deposited on the surface of a relatively high dielectric constant substrate.
Abstract: An analysis of the frequency response of interdigital capacitors, which leads to an optimal design, is given along with an expression for their static gap capacitance. The capacitor Q is given in terms of its geometry which consists of a planar interdigital thin-filrn conductor deposited on the surface of a relatively high dielectric constant substrate. Capacitance values ranging from 0.1 to 10 pF at L band with measured Q's in excess of 400 are realizable using 2-mil line and space widths on a 99.5-percent alumina substrate with a dielectric constant of 10.3. Experimental results obtained with a lumped-constant nine-section S-band Chebyscheff low-pass filter realized using spiral inductors and optimal designed interdigital capacitors are shown to be in excellent agreement with theory. The filter had less than 0.8-dB insertion loss and greater than 25dB return loss in the passband. The filter occupies an area 6.50 by 200 roils on a 24-mil-thick substrate.
293 citations