Proceedings ArticleDOI
Comparative Investigation of DSG-MOSFET and Some analysis on its Performance
Babita Kumari,Kaushik Mazumdar,Aniruddha Ghosal +2 more
- pp 128-130
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TLDR
In this paper, a comparative study of DSG-MOSFET and normal MOS-FET was performed and the performance was analyzed in terms of crack length and current mobility.Abstract:
AlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET $\mathrm{V}_{\mathrm{s}}$ normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.read more
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
TL;DR: Finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT) suggest transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.
Proceedings ArticleDOI
A new sturcture AlGaN/GaN HEMT
Zhe Cheng,Yun Zhang +1 more
TL;DR: In this paper, a new structure of GaN HEMT called different-surface-gate structure was described, which drain and source electrodes are on the other surface while the gate electrode is on the top surface (AlGaN surface) of the device as normal HEMTs.