Proceedings ArticleDOI

# Comparative Investigation of DSG-MOSFET and Some analysis on its Performance

01 Mar 2019-pp 128-130

AbstractAlGaN/GaN-based DSG-MOSFET is upcoming model of MOSFET. In this paper, comparative study of DSG-MOSFET $\mathrm{V}_{\mathrm{s}}$ normal MOSFET and analyzed the performance of DSG-MOSFET. The main features of it are there is negotiable barrier between source and drain so current moves more freely and current is more than normal MOSFET. As if current is more than normal MOSFET then crack length is minimum in DSG-MOSFET.

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Journal ArticleDOI
Oliver Ambacher
Abstract: Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face AlxGa1−xN/GaN/AlxGa1−xN and N-face GaN/AlxGa1−xN/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15

2,374 citations

Journal ArticleDOI
TL;DR: Finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT) suggest transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.
Abstract: In this paper, we present finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a small-scale electro-thermal model coupled to a large-scale mechanics model to determine the resulting stress distribution within a device operated under radio frequency (RF) conditions. The electrical characteristics of the modeled device were compared to experimental measurements and existing simulation data from literature for validation. The results show critical regions around the gate Schottky contact undergo drastically different transient stresses during pulsed operation. Specifically, stress profiles within the AlGaN layer around the gate foot print (GFP) undergo highly tensile electro-thermal stresses while stresses within the AlGaN outside the gate connected field plate (GCFP) towards the drain contact undergo highly tensile electrical stress and compressive thermoelastic stress. It is shown AlGaN/GaN HEMTs undergo large amounts of cyclic loading during typical transient operation. Based on these findings, transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.

29 citations

### "Comparative Investigation of DSG-MO..." refers background in this paper

• ...The semiconductor such as AlGaN, GaN, InAlN, AlGaAs, SiGe, SiC and group III – V, III-N have been included to change the existing silicon based technology [3]....

[...]

• ...There is laser-lift-off or etching process which can remove the substrate and which make GaN vertical schottky barrier diode [3]....

[...]

Proceedings ArticleDOI
01 Nov 2015
Abstract: In several decades, the world has witnessed various dramatic changes since applying of semiconductor. The performance requirements of semiconductor products are continue increasing while the technology is improving. In order to satisfy the requirements, the researches of new material and device structure is necessary. This paper shows a new structure of GaN HEMT. An AlGaN/GaN HEMT consists of AlGaN/GaN Heterojunction, drain electrode, source electrode and gate electrode. Though the researchers have reported a large number of HEMT structures since M. Asif Khan and his colleagues repot the first AlGaN/GaN HEMT in 1993, there is none of the structures, which three electrodes are in different surfaces of device. This paper describes a new structure called different-surface-gate structure, which drain and source electrodes are on the other surface while the gate electrode is on the top surface (AlGaN surface) of the device as normal HEMTs. This paper will establish two models by TCAD simulation software. One is the model of different-surface-gate AlGaN/GaN HEMT and the other one is normal structure AlGaN/GaN HEMT, which is the control model. After building the models, the compare of the models will show the saturation current of the different-surface-gate model is 120% as large as it of the other model.

3 citations