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Journal ArticleDOI

Comparative Study of Gamma Radiation Effects on Solar Cells, Photodiodes, and Phototransistors

TL;DR: In this article, the behavior of various optoelectronic devices after gamma irradiation has been analyzed, including PIN photodiodes, phototransistors, and solar panels.
Abstract: This paper presents the behavior of various optoelectronic devices after gamma irradiation. A number of PIN photodiodes, phototransistors, and solar panels have been exposed to gamma irradiation. Several types of photodiodes and phototransistors were used in the experiment. I-V characteristics (current dependance on voltage) of these devices have been measured before and after irradiation. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.

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Citations
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Journal ArticleDOI
TL;DR: The degradation pathway revealed here emphasizes the need for developing a new generation of metal halide absorbers and ETL materials with improved radiation stability to enable potential space applications of perovskite photovoltaics.
Abstract: We report on the impact of γ radiation (0–500 Gy) on triple-cation Cs0.15MA0.10FA0.75Pb(Br0.17I0.83)3 perovskite solar cells. A set of experiments was designed to reveal the individual contribution...

32 citations

Journal ArticleDOI
01 Jun 2018-Optik
TL;DR: In this article, the effect of absorbed dose on Mg-doped ZnO thin film was investigated for the first time, and it was observed that surface morphology is changed significantly with absorbed dose.

30 citations

Journal ArticleDOI
TL;DR: It is found that gamma radiation increases the waveguide modal effective indices by as much as 4/10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose.
Abstract: Understanding radiation damage is of significant importance for devices operating in radiation-harsh environments. In this Letter, we present a systematic study on gamma radiation effects in amorphous silicon and silicon nitride guided wave devices. It is found that gamma radiation increases the waveguide modal effective indices by as much as 4×10-3 in amorphous silicon and 5×10-4 in silicon nitride at 10 Mrad dose. This Letter further reveals that surface oxidation and radiation-induced densification account for the observed index change.

24 citations


Cites background from "Comparative Study of Gamma Radiatio..."

  • ...Radiation damage in a-Si has been investigated in electronic devices including field effect transistors [11], photodetectors [12] and solar cells [13]....

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Journal ArticleDOI
TL;DR: The results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.
Abstract: Notable progress achieved in studying MoS2 based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.

13 citations

Journal ArticleDOI
TL;DR: In this article, a comparative study of gamma and neutron irradiation effects on the solar cells parameters is presented, where the effects of both types of radiation on the silicon solar cells are investigated.
Abstract: Due to its wide application areas, solar cells are exposed, in their work environment, to different types of radiation (cosmic radiation in the upper layers of the atmosphere, military and civilian nuclear facilities). Moreover, the used nuclear fuel emits y photons and neutrons at the same time, so different types of radiation damage appeared in solar cells located in the vicinity of these fuels. These damage have been caused by both gamma and neutron radiation. That's why very extensive researches have been undertaken with the aim of developing semiconductor devices whose work will be reliable in terms of increased levels of radiation. From the technological point of view, it is important to determine changes, caused by radiation, in the parameters of the silicon solar cells that affect their work. The aim of this paper is to present the comparative study of gamma and neutron irradiation effects on the solar cells parameters.

11 citations

References
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Book
29 Jul 1993
TL;DR: In this paper, the response of materials and devices to radiation in space radiation environments is investigated, including metal-oxide semiconductor (MOS) devices, Diodes, solar cells, and opto-electronics.
Abstract: Introduction 1: Radiation environments 2: The response of materials and devices to radiation 3: Metal-oxide semiconductor (MOS) devices 4: Discrete bipolar transistors 5: Diodes, solar cells, and opto-electronics 6: Power devices 7: Optical media 8: Other components 9: Polymers and other organics 10: The interaction of space radiation with shielding materials 11: Computer methods for particle transport 12: Radiation testing 13: Radiation-hardening of parts 14: Equipment hardening and hardness assurance 15: Conclusions Appendices A Useful general and geophysical data B Useful radiation data C Useful data on materials D Radiation response data for electronic components E Depth-dose curves for representative satellite orbits F Degradation in polymers Index

685 citations

Journal ArticleDOI
TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.

607 citations

Book
01 Jan 1986
TL;DR: The first unified treatment of the analysis and design methods for protection of principally electronic systems from the deleterious effects of nuclear and electro-magnetic radiation is presented in this paper, which combines the disciplines of solid state physics, semiconductor physics, circuit engineering, nuclear physics, together with electronics and electromagnetic theory.
Abstract: This book is the first unified treatment of the analysis and design methods for protection of principally electronic systems from the deleterious effects of nuclear and electro-magnetic radiation. Coverage spans from a detailed description of the nuclear radiation sources to pertinent semiconductor physics, then to hardness assurance. This work combines the disciplines of solid state physics, semiconductor physics, circuit engineering, nuclear physics, together with electronics and electromagnetic theory into a book that can be used as a text with problems at the end of the majority of the chapters. Written by veterans in the field, the most significant feature of this book is its comprehensive treatment of the phenomena involved. This treatment includes the analysis and design of the effect of nuclear radiation on electronic systems from the experimental, theoretical, and engineering viewpoints. Unique pedagogical attempts are employed to make the material more understandable from the position of an enlightened engineering and scientific readership whose task is the design and analysis of radiation hardened electronic systems.

431 citations

01 Jan 1999
TL;DR: In this paper, the authors proposed a method to improve the radiation tolerance of silicon microstrip and pixel detectors in elementary particle collision experiments (e.g., ATLAS, CMS, LHCb and HERA-B) where radiation damage of the detector bulk material leads to severe deterioration of detector properties.
Abstract: Silicon microstrip and pixel detectors are the key devices for the measurement of particle trajectories in elementary particle collision experiments (e.g. ATLAS, CMS, LHCb and HERA-B) they have to operate in extremely intense hadronic radiation fields where radiation damage of the detector bulk material leads to severe deterioration of the detector properties. It is even foreseeable that some of the devices produced from standard detector grade silicon and exposed to the highest irradiation levels will not survive the envisaged operational period of the experiments. Hence, the improvement of the radiation tolerance of the detector bulk material is of prime importance and was the main goal of this thesis...

320 citations

Journal ArticleDOI
TL;DR: In this article, the dependence of basic semiconductor properties on neutron fluence is introduced into device models such as SPICE and the resulting radiation inclusive model permits quantitative determination of device parameters as a function of neutronfluence.
Abstract: High energy radiation produces defect complexes in semiconductor materials which reduce minority carrier lifetime, change majority carrier density, and reduce mobility. Most of the experimental data on semiconductors and semiconductor devices has been taken using high energy neutrons. Recent research has shown that this data can be extrapolated to other high energy radiation such as protons, electrons, alpha particles and gamma rays by normalizing to the energy going into atomic processes. Minority carrier lifetime is the most sensitive electronic property of silicon in the neutron environment. The degradation of minority carrier lifetime results in changes in semiconductor device properties such as current gain, storage time, saturation voltage and sink current. Carrier removal is the next most important characteristic of displacement damage and it causes a decrease in carrier mobility and an increase in resistivity. The dependence of these basic semiconductor properties on neutron fluence is introduced into device models such as SPICE and the resulting radiation inclusive model permits quantitative determination of device parameters as a function of neutron fluence. >

148 citations


"Comparative Study of Gamma Radiatio..." refers background in this paper

  • ...These band-gap defects disturb the transport of electrical charges by several reactions [10]....

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Trending Questions (1)
What are the effects of gamma rays on photoelectric cells?

The paper states that gamma irradiation leads to degradation of the I-V characteristics of optoelectronic devices, including solar cells. However, the characteristics can be improved through annealing.