Journal ArticleDOI
Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures
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TLDR
In this article, a comparative study of n-MgZnO/p-Si UV-B photodetector performance was carried out with different device structures, and the experimental results demonstrate superior photoresponse characteristics of the p-n heterojunction detector against the Schottky type metal-semiconductor-metal counterpart, including a sharper cutoff wavelength at 300 nm, a larger peak photoresponsivity of 1 A/W, and a faster response speed.Abstract:
A comparative study of n-MgZnO/p-Si UV-B photodetector performance was carried out with different device structures. The experimental results demonstrate superior photoresponse characteristics of the p-n heterojunction detector against the Schottky type metal-semiconductor-metal counterpart, including a sharper cutoff wavelength at 300 nm, a larger peak photoresponsivity of 1 A/W, and a faster response speed. The role of built-in field and low interface scattering in p-n heterojunction is explored, and the energy band diagram of n-MgZnO/p-Si is employed to interpret the efficient suppression of visible light photoresponse from Si substrate, revealing the applicability of this heterostructure in fabrication of deep ultraviolet detectors.read more
Citations
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Journal ArticleDOI
Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
Peigang Li,Haoze Shi,Kai Chen,Daoyou Guo,Wei Cui,Yusong Zhi,Shunli Wang,Zhenping Wu,Zhengwei Chen,Weihua Tang +9 more
TL;DR: In this article, a self-powered ultraviolet photodetector was constructed with GaN/Ga2O3 p-n junction by depositing n-type Ga 2O3 thin film on Al2O 3 single crystals substrate covered by p-type GAN thin film, which exhibits a typical rectification behavior in dark and excellent photovoltaic characteristics under 365 nm and 254 nm light illumination.
Journal ArticleDOI
β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity
Xuncai Guo,N.H. Hao,Daoyou Guo,Zhenping Wu,Y. H. An,Xulong Chu,Linghong Li,Peigang Li,Ming Lei,Weihua Tang +9 more
TL;DR: In this article, β -Ga 2 O 3 /Si p-n heterojunctions are formed as a deep ultraviolet (UV) solar-blind photodetector, and the corresponding external quantum efficiency is over 1.8 × 10 5 %.
Journal ArticleDOI
Dual-band MgZnO ultraviolet photodetector integrated with Si
TL;DR: In this paper, a dual-band ultraviolet photodetector was constructed by growing high quality MgxZn1−xO layers on Si substrate with molecular beam epitaxy.
Journal ArticleDOI
Light based underwater wireless communications
Hassan M. Oubei,Chao Shen,Abla Kammoun,Emna Zedini,Ki-Hong Park,Xiaobin Sun,Guangyu Liu,Chun Hong Kang,Tien Khee Ng,Mohamed-Slim Alouini,Boon S. Ooi +10 more
TL;DR: This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, as well as KAUST-KFUPM Special Initiative (KKI) Program, REP/1/2878-01-01.
References
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Journal ArticleDOI
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TL;DR: In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.
Journal ArticleDOI
General Route to Vertical ZnO Nanowire Arrays Using Textured ZnO Seeds
Lori E. Greene,Matt Law,Dawud H. Tan,Max Montano,Josh Goldberger,Gabor A. Somorjai,Peidong Yang +6 more
TL;DR: A method for growing vertical ZnO nanowire arrays on arbitrary substrates using either gas-phase or solution-phase approaches is presented and the nanorod arrays made in solution have a rod diameter, length, density, and orientation desirable for use in ordered Nanorod-polymer solar cells.
Journal ArticleDOI
Solution-processed ultraviolet photodetectors based on colloidal ZnO nanoparticles.
TL;DR: The photocurrent of the device is associated with a light-induced desorption of oxygen from the nanoparticle surfaces, thus removing electron traps and increasing the free carrier density which in turn reduces the Schottky barrier between contacts and ZnO nanoparticles for electron injection.
Journal ArticleDOI
Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization
Jun Zhou,Yudong Gu,Youfan Hu,Wenjie Mai,Ping-Hung Yeh,Gang Bao,Ashok K. Sood,Dennis L. Polla,Zhong Lin Wang +8 more
TL;DR: By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the ZnO nanowire nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced.
Journal ArticleDOI
Quantum Hall Effect in Polar Oxide Heterostructures
Atsushi Tsukazaki,Akira Ohtomo,Akira Ohtomo,Tomohiro Kita,Yuzo Ohno,Hideo Ohno,Masashi Kawasaki +6 more
TL;DR: Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.