Journal ArticleDOI
Comparison of Al0.32Ga0.68N ∕ GaN Heterostructure Field-Effect Transistors with Different Channel Thicknesses
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TLDR
In this article, a Mg-doped insulating GaN layer is inserted to suppress the leakage current, improve the breakdown voltages, and yield excellent pinch-off characteristics.Abstract:
Al 0. 32 Ga 0. 68 N/GaN heterostructure field-effect transistors (HFETs) grown by low-pressure metallorganic chemical vapor deposition are successfully fabricated. A Mg-doped insulating GaN layer is inserted to suppress the leakage current, improve the breakdown voltages, and yield excellent pinch-off characteristics. Moreover, HFETs with different channel thicknesses of 1200, 1500, and 1800 A are investigated. Experimental results show that an HFET with a 1800 A thick channel layer has the highest electron mobility, electron concentration, drain current, and extrinsic transconductance.read more
Citations
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Journal ArticleDOI
Ammonia sensing characteristics of a Pt/AlGaN/GaN Schottky diode
Tai You Chen,Huey-Ing Chen,Yi Jung Liu,Chien Chang Huang,Chi Shiang Hsu,C. Chang,Wen-Chau Liu +6 more
TL;DR: In this article, a Pt/AlGaN/GaN Schottky diode was used to measure the current voltage and current amplitude of a relatively low concentration NH 3 /air gas.
Journal ArticleDOI
Improved AlGaN/GaN Metal–Oxide– Semiconductor High-Electron Mobility Transistors With TiO 2 Gate Dielectric Annealed in Nitrogen
Yu-Shyan Lin,Chi-Che Lu +1 more
TL;DR: In this article, an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor (MOS-HEMT) using a high-k TiO2 gate insulator is demonstrated.
Journal ArticleDOI
Ammonia Sensing Properties of a Pt/AlGaN/GaN Schottky Diode
Tai-You Chen,Huey-Ing Chen,Yi-Jung Liu,Chien-Chang Huang,Chi-Shiang Hsu,Chung-Fu Chang,Wen-Chau Liu +6 more
TL;DR: In this article, an interesting Pt/AlGaN/GaN Schottky-type ammonia gas sensor is fabricated and studied, and both the steady and transient state behaviors of ammonia adsorption reactions are investigated.
Journal ArticleDOI
Hydrogen-Sensing Properties of a Pd/AlGaN/GaN-Based Field-Effect Transistor Under a Nitrogen Ambience
Chi-Shiang Hsu,Huey-Ing Chen,Po-Cheng Chou,Jian-Kai Liou,Chun-Chia Chen,Chung-Fu Chang,Wen-Chau Liu +6 more
TL;DR: The studied HFET shows a promise for high-performance, high-temperature electronics, microsensors, and microelectromechanical system applications.
References
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Journal ArticleDOI
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu,Bernd Keller,Paul T. Fini,Sarah L. Keller,T. Jenkins,L. Kehias,S. P. DenBaars,Umesh Mishra +7 more
TL;DR: In this paper, the use of an AlGaN layer with high Al mole-fraction is proposed to increase the equivalent figures of merit of the Al-GaN/GaN MODFET structure.
Journal ArticleDOI
Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
TL;DR: In this paper, the elastic strain relaxation in (GaN)n-(AlN) n, (Ga N)n(AlN), (Ga n)n (AlN)-1−1−xN), GaNn(InxGa 1−xn)n, and GaNm(alN), where n is the number of layers in the superlattice cell is calculated.
Journal ArticleDOI
Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
TL;DR: In this paper, the authors reported the microwave operation of 1 /spl mu/m gate AlGaN/GaN doped channel heterostructure field effect transistors (DC-HFETs) with the cutoff frequency f/sub T/ of 18.3 GHz.
Journal ArticleDOI
Two-dimensional electron gas properties of algan/gan heterostructures grown on 6h-sic and sapphire substrates
Joan M. Redwing,M. A. Tischler,Jeffrey S. Flynn,Said Elhamri,M. Ahoujja,R. S. Newrock,W. C. Mitchel +6 more
TL;DR: In this article, a temperature independent 2DEG mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. This was attributed to the absence of significant parallel conduction paths in the material.
Journal ArticleDOI
AlGaN/GaN polarization-doped field-effect transistor for microwave power applications
TL;DR: In this paper, an AlGaN/GaN metal-semiconductor field effect transistor (MESFET) with a high-mobility polarization-induced bulk channel charge was created by grading the channel region linearly from GaN to Al0.3Ga0.7N over 1000 A.