Comparison of Butterworth and Chebyshev Prototype of Bandpass Filter for MRI Receiver Front End
01 Jan 2018-pp 395-405
TL;DR: The novelty of the results obtained is that the insertion loss is minimum at the frequency of the MRI receiver front-end chain, which will reduce the loss in the MRI system, increases gain of system, and thus image obtained will be more clear and accurate.
Abstract: Background/Objectives: Filter in MRI front-end receiver chain plays an important role in rejecting the undesired image frequencies. These filters are designed for RF and IF stages in the front-end chain. Methods/Statistical analysis: Bandpass filters are designed for obtaining particular frequency band. The MRI frequency lies in this frequency band selected by the bandpass filter. Different types of prototypes for design of bandpass filter are discussed here. The major two prototypes of filter are designed and simulated. Findings: There are various practical filter prototypes in which the major two filter prototypes: Butterworth and Chebyshev are analyzed. These filters give better response and results for the MRI frequency. They are designed at novel frequency of 63.87 MHz which is the frequency or the MRI receiver chain. The filter is designed and simulated at different orders for obtaining better performance with respect to the insertion loss and return loss. The novelty of the results obtained is that the insertion loss is minimum at the frequency of the MRI receiver front-end chain. This will reduce the loss in the MRI system, increases gain of system, and thus image obtained will be more clear and accurate. Application/Improvements: Better filter can be designed by reducing the passband bandwidth which will provide more accuracy to the system.
References
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Book•
01 Jun 2003
TL;DR: In this paper, the authors present a comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers.
Abstract: Due to the unprecedented growth in wireless applications over the past decade, development of low-cost solutions for RF and microwave communication systems has become of great importance. This practical new book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The books offers you an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers. Supported with over 220 equations and more than 200 illustrations, it covers the practical aspects of each element in exceptional detail. No other single volume treats this subject matter in such depth. From materials, fabrication, and analyses - to design, modeling, and physical, electrical, and thermal applications, this unique resource offers you complete coverage of the critical topics you need understand for your work in the field. Offering the most comprehensive, up-to-date body of knowledge on lumped elements, the book is an indispensable professional reference and serves as an excellent text for senior undergraduate and graduate-level courses in RF and microwave circuit design.
840 citations
Book•
10 Mar 2000
TL;DR: RF/Microwave Circuit Design for Wireless Applications provides researchers and engineers with a complete set of modeling, design, and implementation tools for tackling even the newest IC technologies.
Abstract: From the Publisher:
With wireless technology rapidly exploding, there is a growing need for circuit design information specific to wireless applications Presenting a single-source guidebook to this dynamic area, industry expert Ulrich Rohde and writer David Newkirk provide researchers and engineers with a complete set of modeling, design, and implementation tools for tackling even the newest IC technologies They emphasize practical design solutions for high-performance devices and circuitry, incorporating ample examples of novel and clever circuits from high-profile companies They also provide excellent appendices containing working models and CAD-based applications
RF/Microwave Circuit Design for Wireless Applications offers:
Introduction to wireless systems and modulation typesA systematic approach that differentiates between designing for battery-operated devices and base-station designA comprehensive introduction to semiconductor technologies, from bipolar transistors to CMOS to GaAs MESFETsClear guidelines for obtaining the best performance in discrete and integrated amplifier designDetailed analysis of available mixer circuits applicable to the wireless frequency rangeIn-depth explanations of oscillator circuits, including microwave oscillators and ceramic-resonator-based oscillatorsA thorough evaluation of all components of wireless synthesizers
148 citations
Book•
30 Nov 2001
TL;DR: In this article, the authors present an approach to reduce the substrate bounce of a single-transistor LNA by reducing the number of transistors in the LNA and reducing the interference.
Abstract: 1. RF Design: Concepts and Technology 1.1 RF Specifications 1.1.1 Gain 1.1.2 Noise 1.1.3 Non-Linearity 1.1.4 Sensitivity 1.2 RF Device technology 1.2.1 Characterization and Modeling, Modeling, Cut-off Frequency, Maximum Oscillation Frequency, Input Limited Frequency, Output Limited Frequency, Maximum Available Bandwidth 1.2.2 Technology Choice, Double Poly Devices, Silicon-on-Anything, Comparison, SiGe Bipolar Technology, RF CMOS (updated for newer processes) 1.3 Passives 1.3.1 Resistors 1.3.2 Capacitors (updated for different layouts) 1.3.3 Planar Monolithic Inductors (updated as relation to newer processes) References (updated) 2. Antennas, Interface and substrate 2.1 Antennas 2.2 Bond wires 2.3 Transmission Lines 2.3.1 General Theory 2.3.2 Impedance Matching using Transmission Lines 2.3.3 Microstrip Lines and coplanar Lines 2.4 Bond Pads and ESD Devices 2.4.1 Bond Pads 2.4.2 ESD Devices, ggNMOST ESD Device, pn and np-diode ESD Device (updated for newer processes and detailed scaling effects) 2.5 Substrate 2.5.1 Substrate bounces 2.5.2 Design Techniques to Reduce the substrate bounce References (updated) 3. Low Noise Amplifiers 3.1 Specifications 3.2 Bipolar LNA designs 3.2.1 DCS applications in SOA, Design of the LNA, Measurements 3.2.2 Broadband LNA (new) 3.3 CMOS LNA Design 3.3.1 Single Transistor LNA, Design Steps, Simulation and Measurements 3.3.2 Classical LNA Design, The Design, Measurement Results 3.3.3 Broadband LNA (new) 3.4 Evaluation References (updated) 4. Mixers 4.1 Specification 4.2 Bipolar Mixer Design 4.3 CMOS mixers 4.3.1 Active CMOS mixer 4.3.2 Passive CMOS mixer, 1/f-Noise in mixer transistors, 1/f-Noise due to IF amplifier, 1/f-noise due to Switched-Capacitor Behavior 4.3.3 Concluding remarks References (Updated) 5. Case study Receiver front-ends (new) 5.1 Bluetooth (new) 5.2 IEEE 802.11a Standard (new) 6. RF Power Amplifier 6.1 Specification 6.1.1 Efficiency 6.1.2 Generic Amplifier Classes 6.1.3 Heating 6.1.4 Linearity 6.1.5 Ruggedness 6.2 Bipolar PA design 6.3 CMOS PA Design 6.4 Linearization Principles 6.4.1 Predistortion Technique 6.4.2 Phase-Correcting feedback 6.4.3 Envelope Elimination and Restoration (EER) 6.4.4 Cartesian Feedback 6.5 Case study: Bluetooth PA (new) References (updated) Note: Oscillator chapter: errors removed and updated throughout, sub-section headings probably quite similar but to be defined 7. Oscillators 7.1 Introduction 7.2 Specifications 7.3 LC oscillator 7.4 Ring oscillators 7.5 Phase noise modelling and simulation (new) 7.6 Typical oscillator performance (new) 7.7 Oscillator case studies (new), Wide range oscillators for mobile applications, Oscillators for ultra low-power wireless links, 10GHz CMOS VCO for WLAN, 10GHz QuBIC VCO for Satellite References (updated) 8. Frequency Synthesizers 8.1 Introduction 8.2 Integer-N PLL Architecture 8.3 Tuning System Specifications 8.3.1 Tuning Range 8.3.2
83 citations
Book•
01 Feb 2004
TL;DR: In this article, the authors present a review of the state-of-the-art receiver architecture and design of a multichannel OFDM-based receiver with a linearity test.
Abstract: Preface.Acknowledgments.1 INTRODUCTION.1.1 Current State of the Art.2 RECEIVER SYSTEM DESIGN.2.1 Frequency Planning.2.1.1 Blockers.2.1.2 Spurs and Desensing.2.1.3 Transmitter Leakage.2.1.4 LO Leakage and Interference.2.1.5 Image.2.1.6 Half IF.2.2 Link Budget Analysis.2.2.1 Linearity.2.2.2 Noise.2.2.3 Signal-to-Noise Ratio.2.2.4 Receiver Gain.2.3 Propagation Effects.2.3.1 Path Loss.2.3.2 Multipath and Fading.2.3.3 Equalization.2.3.4 Diversity.2.3.5 Coding.2.4 Interface Planning.2.5 Conclusion.3 REVIEW OF RECEIVER ARCHITECTURES.3.1 Heterodyne Receivers.3.2 Image Reject Receivers.3.2.1 Hartley Architecture.3.2.2 Weaver Architecture.3.3 Zero IF Receivers.3.4 Low IF Receivers.3.5 I ssues in Direct Conversion Receivers.3.5.1 Noise.3.5.2 LO Leakage and Radiation.3.5.3 Phase and Amplitude Imbalance.3.5.4 DC Offset.3.5.5 Intermodulations.3.6 Architecture Comparison and Trade-off.3.7 Conclusion.4 SILICON-BASED RECEIVER DESIGN.4.1 Receiver Architecture and Design.4.1.1 System Description and Calculations.4.1.2 Basics of OFDM.4.1.3 System Architectures.4.1.4 System Calculations.4.2 Circuit Design.4.2.1 SiGe BiCMOS Process Technology.4.2.2 LNA.4.2.3 Mixer.4.2.4 Frequency Divider.4.3 Receiver Design Steps.4.3.1 Design and Integration of Building Blocks.4.3.2 DC Conditions.4.3.3 Scattering Parameters.4.3.4 Small-Signal Performance.4.3.5 Transient Performance.4.3.6 Noise Performance.4.3.7 Linearity Performance.4.3.8 Parasitic Effects.4.3.9 Process Variation.4.3.10 50-OMEGA and Non-50-OMEGA Receivers.4.4 Layout Considerations.4.5 Characterization of Receiver Front-Ends.4.5.1 DC Test.4.5.2 Functionality Test.4.5.3 S-Parameter Test.4.5.4 Conversion Gain Test.4.5.5 Linearity Test.4.5.6 Noise Figure Test.4.5.7 I/Q Imbalance.4.5.8 DC Offset.4.6 Measurement Results and Discussions.4.6.1 Close Examination of Noise Figure and I/Q Imbalance.4.6.2 Comments on I/Q Imbalance.4.7 Conclusion.5 SUBHARMONIC RECEIVER DESIGNS.5.1 Illustration of Subharmonic Techniques.5.2 Mixing Using Antisymmetric I-V Characteristics.5.3 Impact of Mismatch Effects.5.4 DC Offset Cancellation Mechanisms.5.4.1 Intrinsic DC Offset Cancellation.5.4.2 Extrinsic DC Offset Cancellation.5.5 Experimental Verification of DC Offset.5.6 Waveform Shaping Before Mixing.5.6.1 Theory and Analysis.5.6.2 Experimental Verification on GaAs MESFET APDP.5.6.3 Implementation in Silicon.5.7 Design Steps for APDP-Based Receivers.5.8 Architectural Illustration.5.9 Fully Monolithic Receiver Design Using Passive APDP Cores.5.9.1 Integrated Direct Conversion Receiver MMIC's.5.9.2 Receiver Blocks.5.9.3 Additional Receiver Blocks.5.10 Reconfigurable Multiband Subharmonic Front-Ends.5.11 Conclusion.6 ACTIVE SUBHARMONIC RECEIVER DESIGNS.6.1 Stacking of Switching Cores.6.1.1 Description and Principles.6.1.2 Subharmonic Receiver Architecture.6.2 Parallel Transistor Stacks.6.2.1 Active Mixer.6.2.2 Receiver Architecture.6.2.3 Extension to Passive Mixers.6.3 Extension to Higher-Order LO Subharmonics.6.4 Multiple Phase Signal Generation from Oscillators.6.5 Future Direction and Conclusion.7 DESIGN AND INTEGRATION OF PASSIVE COMPONENTS.7.1 System on Package (SoP).7.1.1 Multilayer Bandpass Filter.7.1.2 Multilayer Balun Structure.7.1.3 Module-Integrable Antennaw.7.1.4 Fully Integrated SoP Module.7.2 On-Chip Inductors.7.2.1 Inductor Modeling.7.2.2 Inductor Parameters.7.2.3 Application in Circuits.7.3 Capacitors.7.4 Differentially Driven Inductors.7.5 Transformers.7.5.1 Electrical Parameters.7.5.2 Physical Construction.7.5.3 Electrical Models.7.5.4 Frequency Response of Transformers.7.5.5 Step-Up/Step-Down Transformers and Circuit Applications.7.6 On-Chip Filters.7.6.1 Filters Using Bond Wires.7.6.2 Active Filters.7.7 On-Wafer Antennas.7.8 Wafer-Level Packaging.7.9 Conclusion.8 DESIGN FOR INTEGRATION.8.1 System Design Considerations.8.1.1 I/O Counts.8.1.2 Cross-Talk.8.1.3 Digital Circuitry Noise.8.2 IC Floor Plan.8.2.1 Signal Flow and Substrate Coupling.8.2.2 Grounding.8.2.3 Isolation.8.3 Packaging Considerations.8.3.1 Package Modeling.8.3.2 Bonding Limitation.8.4 Conclusion.9 FUTURE TRENDS.9.1 CMOS Cellphones.9.2 Multiband, Multimode Wireless Solutions.9.3 60 GHz Subsystems in Silicon!9.4 Interchip Communications.9.5 Ultrawideband Communication Technology.9.6 Diversity Techniques.9.7 Conclusion.Index.
34 citations
Journal Article•
TL;DR: This paper presents the design technique, simulation, fabrication and comparison between measured and simulated results of a parallel coupled microstrip BPF, and shows that they are approximately equal.
Abstract: This paper presents the design technique, simulation, fabrication and comparison between measured and simulated results of a parallel coupled microstrip BPF. The filter is designed and optimized at 2.44 GHz with a FBW of 3.42%. The first step in designing of this filter is approximated calculation of its lumped component prototype. Admittance inverter is used to transform the lumped component circuit into an equivalent form using microwave structures. After getting the required specifications, the filter structure is realized using parallel coupled technique. Simulation is done using ADS software. Next, optimization is done to achieve low insertion loss and a selective skirt. The simulated filter is fabricated on FR-4 substrate. Comparison between the simulated and measured results shows that they are approximately equal.
9 citations