Comparison of the room temperature 1.53 μm Er photoluminescence from flash lamp and furnace annealed Er-doped Ge-rich SiO2 layers
TL;DR: In this paper, the appearance of the 1.53μm Er photoluminescence from Er-doped Ge-rich SiO2 layers is investigated in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+.
Abstract: The furnace and flash-lamp annealing (FLA) temperature dependent variation in the room temperature 1.53 μm Er photoluminescence (PL) from Er-doped Ge-rich SiO2 layers is investigated. The appearance of the 1.53 μm Er PL is discussed in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+. Detailed analyses suggest that in case of FLA the decrease in the 1.53 μm Er PL intensity is governed by the temperature dependent recrystallization of Ge nanoclusters, while for furnace-annealing it is associated with the reduction in the LC-Er3+ coupling due to Ge out-diffusion and the formation of Er-rich clusters with increasing temperature.
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TL;DR: In this paper , Er3+-doped Bi2O3 thin films were sputter-deposited on SiO2 substrates under various process conditions, and the emission spectra exhibited Er 3+ luminescence signals consisting of eight Stark splitting peaks.
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TL;DR: In this paper, a comparative study of the 1.54μm photoluminescence (PL) from Al2O3:(Er, Si) and Al 2O3(Er, Ge) films co-sputtered on Si substrates using a composite target is presented.
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TL;DR: The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for different Er-doped thin film photonic materials.
Abstract: Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3, Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials.
1,089 citations
TL;DR: In this article, the interaction between Si nanoclusters Si-nc and Er in SiO2 was investigated, and the optical characterization and modeling of this system, and its effectiveness as a gain material for optical waveguide amplifiers at 1.54 m.
Abstract: This paper investigates the interaction between Si nanoclusters Si-nc and Er in SiO2, reports on the optical characterization and modeling of this system, and attempts to clarify its effectiveness as a gain material for optical waveguide amplifiers at 1.54 m. Silicon-rich silicon oxide layers with an Er content of 4 – 6 10 20 at./ cm 3 were deposited by reactive magnetron sputtering. The films with Si excess of 6 – 7 at. %, and postannealed at 900 ° C showed the best Er 3+ photoluminescence PL intensity and lifetime, and were used for the study. The annealing duration was varied up to 60 min to engineer the size and density of Si-nc and optimize Si-nc and Er coupling. PL investigations under resonant 488 nm and nonresonant 476 nm pumping show that an Er effective excitation cross section is similar to that of Si-nc 10 �17 –1 0 �16 cm 2 at low pumping flux 10 16 –1 0 17 cm �2 s �1 , while it drops at high flux 10 18 cm �2 s �1 . We found a maximum fraction of excited Er of about 2% of the total Er content. This is far from the 50% needed for optical transparency and achievement of population inversion and gain. Detrimental phenomena that cause depletion of Er inversion, such as cooperative up conversion, excited-stated absorption, and Auger deexcitations are modeled, and their impact in lowering the amount of excitable Er is found to be relatively small. Instead, Auger-type short-range energy transfer from Si-nc to Er is found, with a characteristic interaction length of 0.4 nm. Based on such results, numerical and analytical Er as a quasi-two-level system coupled rate equations have been developed to determine the optimum conditions for Er inversion. The modeling predicts that interaction is quenched for high photon flux and that only a small fraction of Er 0.2–2 % is excitable through Si-nc. Hence, the low density of sensitizers Si-nc and the short range of the interaction are the explanation of the low fraction of Er coupled. Efficient ways to improve Er-doped Si-nc thin films for the realization of practical optical amplifiers are also discussed.
95 citations
TL;DR: In this article, the use of flash lamp annealing for ultrashallow junction formation in silicon has been described, where low energy boron and arsenic implants have been heat-treated in this way using peak temperatures in the range of 1100 to 1300°C and effective anneal times of 20 and 3 ms.
Abstract: The use of flash lamp annealing for ultrashallow junction formation in silicon has been described. Low energy boron and arsenic implants have been heat-treated in this way using peak temperatures in the range of 1100 to 1300°C and effective anneal times of 20 and 3 ms. Secondary ion mass spectrometry and four-point probe measurements have been undertaken to determine the junction depth and the sheet resistance, respectively. Optimum processing conditions have been identified, under which one can obtain combinations of junction depth and sheet resistance values that meet the 90 nm technology node requirements and beyond.
79 citations
TL;DR: In this article, the processes of electro- (EL) and photoluminescence (PL) and charge trapping in Er-implanted SiO2 containing silicon nanoclusters have been studied.
Abstract: The processes of electro- (EL) and photoluminescence (PL) and charge trapping in Er-implanted SiO2 containing silicon nanoclusters have been studied. It is shown that in Er-doped SiO2 with an excess of silicon nanoclusters of 10 at. %, a strong energy transfer from silicon nanoclusters results in a ten-fold increase of the PL peak at 1540 nm from Er luminescent centers, whereas the EL is strongly quenched by the excess silicon nanoclusters. It is further shown that the implantation of Er creates in the oxide positive charge traps with a giant cross section (σh0>10−13cm2). Introducing subsequent silicon nanocrystals in the oxide leads to the formation of negative charge traps of a giant cross section (σe0>10−13cm2). The possible reason for the EL quenching in the Er-doped SiO2 by silicon nanoclusters is discussed.
62 citations
TL;DR: In this paper, the photoluminescence spectra and transients of undoped and Er-doped size-controlled nanocrystalline Si-O2 multilayered structures with mean nanocrystal size of 1.5-4.5nm have been comparatively investigated.
Abstract: Spectra and transients of the photoluminescence (PL) of undoped and Er-doped size-controlled nanocrystalline Si∕SiO2 multilayered structures with mean nanocrystal size of 1.5–4.5nm have been comparatively investigated. The Er-doped structures exhibit a strong Er-related PL band at 0.81eV, while the efficiency of the intrinsic PL band of Si nanocrystals at 1.2–1.7eV decreases by several orders of magnitude in comparison with the undoped structures. At low temperature the PL spectra of the Er-doped structures show several dips separated by the energy of Si TO-phonon and bound to the transition energies between the second and third excited states to the ground state of Er3+. The Er-related PL is characterized by lifetimes of around 3–5ms, a weak temperature quenching, and a high efficiency, which is comparable or even stronger than that of the intrinsic PL in the corresponding undoped samples. This efficient sensitizing of the Er-related luminescence is explained by the structural properties of the samples, ...
60 citations