Comparison study of 12kV n-type SiC IGBT with 10kV SiC MOSFET and 6.5kV Si IGBT based on 3L-NPC VSC applications
12 Nov 2012-pp 310-317
TL;DR: In this paper, a three-level neutral point clamped voltage source converter (3L-NPC VSC) was used as a 7.2kV grid interface for the solid state transformer and STATCOM operation.
Abstract: Silicon Carbide (SiC) devices and modules have been developed with high blocking voltages for Medium Voltage power electronics applications. Silicon devices do not exhibit higher blocking voltage capability due to its relatively low band gap energy compared to SiC counterparts. For the first time, 12kV SiC IGBTs have been fabricated. These devices exhibit excellent switching and static characteristics. A Three-level Neutral Point Clamped Voltage Source Converter (3L-NPC VSC) has been simulated with newly developed SiC IGBTs. This 3L-NPC Converter is used as a 7.2kV grid interface for the solid state transformer and STATCOM operation. Also a comparative study is carried out with 3L-NPC VSC simulated with 10kV SiC MOSFET and 6.5kV Silicon IGBT device data.
Citations
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TL;DR: The application status of the energy storage system in the renewable energy power generation is concluded and the critical problems that need to be addressed during the construction and operation of the storage system are indicated.
Abstract: To maximize the introduction of renewable energy, introducing grid energy storage systems are essential. Electrochemical energy storage system, i.e., battery system, exhibits high potential for grid energy storage application. A battery energy storage system is comprised of a battery module and a power conversion module. This paper starts by reviewing several potential battery systems, as well as an advanced aluminum-ion battery that currently has promising prospects in the electrochemical energy storage system. The characteristics of the batteries are reviewed and compared, including the materials, electrochemistry, performance and costs. The application prospect of the batteries is discussed. The paper summarizes the features of current and future grid energy storage battery, lists the advantages and disadvantages of different types of batteries, and points out that the performance and capacity of large-scale battery energy storage system depend on battery and power condition system (PCS). The power conversion system determines the operational condition of the entire energy storage system. The new generation wide bandgap semiconductor for power electronic technology is discussed from the perspective of performance, topology, model and non-linearity and is compared to the traditional silicon-based semiconductor. Finally, the application prospect of the new generation semiconductor technology in the energy storage system is indicated. This paper concludes the application status of the energy storage system in the renewable energy power generation and indicates the critical problems that need to be addressed during the construction and operation of the storage system.
269 citations
TL;DR: The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described in this article, followed by an outline of the applications that stand to be impacted.
Abstract: The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.
192 citations
Cites background from "Comparison study of 12kV n-type SiC..."
...In a wind generation system, Si IGBTs are replaced with SiC MOSFETs, but, due to the lower current and voltage ratings of the devices, the number of SiC devices is much higher than Si devices....
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...Although still in development, SiC IGBTs [Fig....
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...The reduced gate charge and carrier lifetimes of SiC allow IGBTs with ratings of 12 kV and 10 A to switch at 10 kHz and above, where state-of-the-art Si devices (6.5 kV, 25 A) are limited to switching frequencies of 1–2 kHz [30]....
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...This converter achieved losses of less than 100 W compared with nearly 250 W for a converter based on Si IGBTs and diodes, and demonstrated an efficiency of over 98% [101]....
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...As current ratings for SiC IGBTs increase, the conduction losses are expected to decrease in relation to MOSFETs with equivalent voltage ratings....
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TL;DR: This review comprehensively reviews the SST topologies suitable for different voltage levels and with varied stages, their control operation, and different trends in applications and provides recommendations for the improvement of future SST configuration and development.
Abstract: Solid-state transformer (SST) is an emerging technology integrating with a transformer power electronics converters and control circuitry. This paper comprehensively reviews the SST topologies suitable for different voltage levels and with varied stages, their control operation, and different trends in applications. The paper discusses various SST configurations with their design and characteristics to convert the input to output under unipolar and bipolar operation. A comparison between the topologies, control operation and applications are included. Different control models and schemes are explained. Potential benefits of SST in many applications in terms of controllability and the synergy of AC and DC systems are highlighted to appreciate the importance of SST technologies. This review highlights many factors including existing issues and challenges and provides recommendations for the improvement of future SST configuration and development.
175 citations
Cites background from "Comparison study of 12kV n-type SiC..."
...Hereafter comes with the SiC devices which are more efficient than Si devices [40], [42], [43]....
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TL;DR: An opposition method is proposed to compare Si-IGBT and SiC-MOSFET modules in voltage source inverter operation, and prospects for developments in traction applications are presented.
Abstract: Silicon (Si) insulated-gate bipolar transistors are widely used in railway traction converters. In the near future, silicon carbide (SiC) technology will push the limits of switching devices in three directions: higher blocking voltage, higher operating temperature, and higher switching speeds. The first silicon carbide (SiC) MOSFET modules are available on the market and look promising. Although they are still limited in breakdown voltage, these wide-bandgap components should improve traction-chain efficiency. Particularly, a significant reduction in the switching losses is expected which should lead to improvements in power–weight ratios. Nevertheless, because of the high switching speed and the high current levels required by traction applications, the implementation of these new modules is critical. An original method is proposed to compare, in terms of stray inductance, several dc bus-bar designs. To evaluate the potential of these new devices, a first set of measurements, based on a single-pulse test-bench, was obtained. The switching behavior of SiC devices was well understood at turn-off and turn-on. To complete this work, the authors use an opposition method to compare Si-IGBT and SiC-MOSFET modules in voltage source inverter operation. For this purpose, a second test-bench, allowing electrical and thermal measurements, was developed. Experimental results confirm the theoretical loss-calculation of the single-pulse tests and the correct operation of up to three modules directly connected in parallel. This analysis provides guidelines for a full SiC inverter design, and prospects for developments in traction applications are presented.
118 citations
TL;DR: In this paper, a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs is presented, which is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and corresponding experimental results are presented.
Abstract: Silicon carbide (SiC) MOSFET is capable of achieving better efficiency and better power density of power converters due to its low on-state resistance and lower switching losses compared to silicon (Si) Insulated Gate Bipolar Transistor. Operation of power converters at higher switching frequency using SiC devices allows reduction in filter size and hence improves the power to weight ratio of the converter. This paper presents switching characterization of 1200-V 100-A SiC MOSFET module and compares the efficiency of a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs. Also, various design considerations of the 1200-V 100-A SiC MOSFET-based 2L-VSC including gate drive design, bus bar packaging, and thermal management have been elaborated. The designed and developed 2L-VSC is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and the corresponding experimental results are presented.
79 citations
Cites background from "Comparison study of 12kV n-type SiC..."
...Therefore, with the advent of SiC technology, MOSFET on-state resistance and consequently the conduction loss has become low, even at higher voltages....
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References
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05 Sep 2008
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Abstract: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.
1,730 citations
TL;DR: A loss-balancing scheme is introduced, enabling a substantially increased output power and an improved performance at zero speed, compared to the conventional NPC VSC.
Abstract: The three-level neutral-point-clamped voltage-source converter (NPC VSC) is widely used in high-power medium-voltage applications. The unequal loss distribution among the semiconductors is one major disadvantage of this popular topology. This paper studies the loss distribution problem of the NPC VSC and proposes the active NPC VSC to overcome this drawback. The switch states and commutations of the converter are analyzed. A loss-balancing scheme is introduced, enabling a substantially increased output power and an improved performance at zero speed, compared to the conventional NPC VSC.
690 citations
"Comparison study of 12kV n-type SiC..." refers background in this paper
...Series connection of switching devices like the IGBTs is not generally recommended at such a high voltage level because this will result in a dynamic voltage sharing issue along with an increased on state voltage drop[1]-[3]....
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...Today Three-Level Neutral Point Clamped Voltage Source Converters (3L-NPC-VSC) are widely used in the industry [1]....
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TL;DR: In this article, the state-of-the-art of power semiconductors for high power PWM converters is summarized. And the design and characteristics of a commercially available integrated gate commutated thyristors (IGCT) neutral point clamped PWM voltage source converter for medium voltage drives are discussed.
Abstract: The introduction of new high power devices like integrated gate commutated thyristors (IGCTs) and high voltage insulated gate bipolar transistors (IGBTs) accelerates the broad use of pulse width modulation (PWM) voltage source converters in industrial and traction applications. This paper summarizes the state-of-the-art of power semiconductors. The characteristics of IGCTs and high voltage IGBTs are described in detail. Both the design and loss simulations of a two level 1.14 MVA voltage source inverter and a 6 MVA three-level neutral point clamped voltage source converter with active front end enable a detailed comparison of both power semiconductors for high power PWM converters. The design and the characteristics of a commercially available IGCT neutral point clamped PWM voltage source converter for medium voltage drives are discussed. Recent developments and trends of traction converters at DC mains and AC mains are summarized.
434 citations
"Comparison study of 12kV n-type SiC..." refers background or methods in this paper
...Series connection of switching devices like the IGBTs is not generally recommended at such a high voltage level because this will result in a dynamic voltage sharing issue along with an increased on state voltage drop[1]-[3]....
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...The 3L-VSCs are used for medium voltage applications such as Medium Voltage (MV) drives, FACTS devices, and Active Front End Converter (FEC) applications [2]-[3]....
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Book•
01 Jan 2004
TL;DR: In this paper, the authors present a simulation of low-defect 3D-SiC grown on Undulant-Si (001) substrates. But the simulation is limited to 2D and 3D SiC.
Abstract: Zero- and Two-Dimensional Native Defects.- Defect Migration and Annealing Mechanisms.- Hydrogen in SiC.- Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes.- Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation.- Defect Formation and Reduction during Bulk SiC Growth.- High Nitrogen Doping During Bulk Growth of SiC.- Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas.- Low-Defect 3D-SiC Grown on Undulant-Si (001) Substrates.- New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide.- Formation of SiC Thin Films by Ion Beam Synthesis.- Atomic Structure of SiC Surfaces.- The Continuum of Interface-Induced Gap States.- Contributions to the Density of Interface States in SiC MOS Structures.- Properties of Nitrided Oxides on SiC.- Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interface.- Optical Properties of SiC.- Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC.- Electronic Structure of Deep Defects in SiC.- Phosphorus-Related Centers in SiC.- Hall Scattering Factor for Electrons and Holes in SiC.- Radiotracer Deep Level Transient Spectroscopy.- Vacancy Defects Detected by Positron Annihilation.- Characterization of Defects in SiC Crystals by Raman Scattering.- Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy.- Synchrotron White Beam X-ray Topography and High Resolution X-ray Diffraction Studies.- Ohmic Contacts for Power Devices on SiC.- Micromachining of SiC.- Surface Preparation Techniques for SiC Wafers.- Epitaxial Growth and Device Processing of SiC on Non-Basal Planes.- SiC Power Bipolar Transistors and Thyristors.- High-Voltage SiC Devices.- Power MOSFETs in 4H-SiC.- Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor.- Development of SiC Devices for Microwave and RF Power Amplifiers.- Advances in SiC Field Effect Gas Sensors
393 citations
"Comparison study of 12kV n-type SiC..." refers background in this paper
...Recently 10kV SiC MOSFETs have been developed [6][9]....
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TL;DR: In this article, a 20-kHz 370-W dc/dc boost converter based on a 10-kV 4H-SiC DMOSFET and diodes is designed and experimentally demonstrated.
Abstract: Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their applications in high-voltage high-frequency power conversions. The aim of this paper is to obtain the key device characteristics of SiC MOSFETs so that their realistic application prospect can be provided. In particular, the emphasis is on obtaining their losses in various operation conditions from the extensive characterization study and a proposed behavioral SPICE model. Using the validated MOSFET SPICE model, a 20-kHz 370-W dc/dc boost converter based on a 10-kV 4H-SiC DMOSFET and diodes is designed and experimentally demonstrated. In the steady state of the boost converter, the total power loss in the 15.45-mm2 SiC MOSFET is 23.6 W for the input power of 428 W. The characterization study of the experimental SiC MOSFET and the experiment of the SiC MOSFET-based boost converter indicate that the turn-on losses of SiC MOSFETs are the dominant factors in determining their maximum operation frequency in hard-switched circuits with conventional thermal management. Replacing a 10-kV SiC PiN diode with a 10-kV SiC JBS diode as a boost diode and using a small external gate resistor, the turn-on loss of the SiC MOSFET can be reduced, and the 10-kV 5-A SiC MOSFET-based boost converter is predicted to be capable of a 20-kHz operation with a 5-kV dc output voltage and a 1.25-kW output power by the PSpice simulation with the MOSFET model. The low losses and fast switching speed of 10-kV SiC MOSFETs shown in the characterization study and the preliminary demonstration of the boost converter make them attractive in high-frequency high-voltage power-conversion applications.
329 citations
"Comparison study of 12kV n-type SiC..." refers background or methods in this paper
...Recently 10kV SiC MOSFETs have been developed [6][9]....
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...The antiparallel diodes and the clamping diodes used in the model are 10kV/10A JBS diodes [6], [7]....
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