Journal ArticleDOI
Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides
Shu-Jau Chang,Jenn-Gwo Hwu +1 more
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TLDR
In this paper, negative capacitance was observed in a MOS capacitor grown on an n-type substrate with ultrathin gate oxide film, and it was found that the NC effect turned on at the flatband voltage and was mainly attributed to local electron-hole recombination occurring at the nonuniform interface.Abstract:
Negative capacitance (NC) was observed in a MOS capacitor grown on an n-type substrate with ultrathin gate oxide film. The NC effect was studied by considering the oxide thickness, the lateral nonuniformity of oxide layers, the current conduction mechanism, and the minority carrier response. It was found that the NC effect turned on at the flatband voltage and was mainly attributed to local electron-hole recombination occurring at the nonuniform interface. A circuit model including an inductive pathway is proposed to take the local electron-hole recombination into account, and the estimation of the NC response on frequency approximates the experimental observation. Because the device sizes are scaled down continuously, it is important to gain an insight into the NC phenomenon induced from the nonuniform factors in fundamental MOS devices.read more
Citations
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Journal ArticleDOI
Switching-Speed Limitations of Ferroelectric Negative-Capacitance FETs
Zhi Cheng Yuan,Shahriar Rizwan,Michael Wong,Kyle D. Holland,Sam Anderson,Terence B. Hook,Diego Kienle,Serag Gadelrab,Prasad S. Gudem,Mani Vaidyanathan +9 more
TL;DR: In this paper, the authors investigated the high-frequency switching behavior of negative-capacitance FETs using the Landau-Khalatnikov equation to model ferroelectric materials.
Journal ArticleDOI
Interface state effects on resistive switching behaviors of pt/nb-doped srtio3 single-crystal schottky junctions
TL;DR: In this paper, steady-state electrical properties of single-crystal (Pt/Nb:STO) singlecrystal junctions were investigated in air and vacuum.
Journal ArticleDOI
Characterization of Edge Fringing Effect on the $C$ – $V$ Responses From Depletion to Deep Depletion of MOS(p) Capacitors With Ultrathin Oxide and High- $\kappa$ Dielectric
Jen-Yuan Cheng,Jenn-Gwo Hwu +1 more
TL;DR: In this paper, the edge fringing effect (EFE) on the capacitancevoltage (C -V) responses from depletion to deep depletion (DD) of p-substrate metal-oxide-semiconductor capacitors with ultrathin oxide (2.1-2.9 nm) and high-κ dielectric was examined.
Journal ArticleDOI
Size effect on negative capacitance at forward bias in InGaN/GaN multiple quantum well-based blue LED
El Mostafa Bourim,Jeong In Han +1 more
TL;DR: In this article, a mechanism based on the electrons/holes charge carriers conductivity difference is proposed to be responsible for the transient electron-hole pair recombination process inducing negative capacitance (NC) phenomenon.
Journal ArticleDOI
Negative capacitance in optically sensitive metal-insulator-semiconductor-metal structures
TL;DR: In this paper, the negative capacitance effect in back-to-back combination of a metal-insulator-semiconductor (MIS) structure and a metal semiconductor junction, which is fabricated on an n type Silicon-on-Insulator substrate is reported.
References
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Mos (Metal Oxide Semiconductor) Physics and Technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
MOS /metal oxide semiconductor/ physics and technology
TL;DR: In this article, the authors present a method for extracting interface trap properties from the conductance of a metal oxide Silicon Capacitor at intermediate and high frequency intervals, and demonstrate that these properties can be used for charge trapping in the oxide.
Journal ArticleDOI
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
Sayeef Salahuddin,Supriyo Datta +1 more
TL;DR: By replacing the standard insulator with a ferroelectric insulator of the right thickness it should be possible to implement a step-up voltage transformer that will amplify the gate voltage thus leading to values of S lower than 60 mV/decade and enabling low voltage/low power operation.
Journal ArticleDOI
Negative capacitance effect in semiconductor devices
TL;DR: In this paper, the negative capacitance effect in quantum well infrared photodetectors (QWIPs) has been investigated theoretically and confirmed experimentally by simulation results and experimental studies.
Journal ArticleDOI
Implications of the negative capacitance observed at forward bias in nanocomposite and polycrystalline solar cells.
Iván Mora-Seró,Juan Bisquert,Francisco Fabregat-Santiago,Germà Garcia-Belmonte,Guillaume Zoppi,Guillaume Zoppi,Ken Durose,Y. Y. Proskuryakov,Ilona Oja,Abdelhak Belaidi,Thomas Dittrich,Ramón Tena-Zaera,A. Katty,Claude Lévy-Clément,Vincent Barrioz,Stuart J. C. Irvine +15 more
TL;DR: The experiments suggest a universality of the underlying phenomenon giving rise to this effect in a broad range of solar cell devices, and an equivalent circuit model is suggested to explain the impedance and capacitance spectra.