Journal ArticleDOI
Computer studies of the effect of electron and hole current multiplication factors on the d.c. and microwave properties of symmetrical Si DDR IMPATT devices
M. Sridharan,S.K. Roy +1 more
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TLDR
In this paper, the effect of carrier current multiplication on the d.c. field and current profiles and small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode was analyzed.Abstract:
Computer studies are presented on the effect of carrier current multiplication on the d.c. field and current profiles and the small-signal admittance of a symmetrical Si double-drift region (DDR) IMPATT diode, taking into account the realistic field dependence of ionization rate and drift velocity of charge carriers and also the effect of mobile space-charge. The d.c. field and current profiles indicate that the lowering of the electron current multiplication ( M n ) is more effective than the lowering of hole current Multiplication factor ( M p ) in modifying the d.c. properties of Si DDR devices. The computer-aided small-signal analysis carried out for the same structure shows that, a lowering of M n leads to a sharp decrease of the peak value of the small-signal negative conductance at a fixed d.c. current density which is accompanied by a shift of the frequency range of oscillation towards the higher frequency side.read more
Citations
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Journal ArticleDOI
A Study on the Effect of Electron and Hole Saturation Currents on the Negative Resistance Profiles, Negative Conductance and the Frequency of Operation of Millimeter Wave (W-Band) Double-Drift Silicon IMPATT Diodes
N Mazumder,S. K. Roy +1 more
TL;DR: In this article, the effect of reverse saturation current on the high frequency and low frequency of a silicon double-drift region (DDR) operating in the mm-wave range (W-band) was investigated.
References
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Journal ArticleDOI
Double-drift Silicon IMPATT's at X band
TL;DR: In this paper, double-drift silicon IMPATT's at X band have been investigated and a design window, centered around V a /V d ∼ 1.1 for silicon is presented and accounts for smaller efficiencies.
Journal ArticleDOI
IMPATT oscillators with enhanced leakage current
TL;DR: In this paper, the behavior of IMPATT oscillators with enhanced leakage current has been experimentally evaluated by irradiating operating diodes with transient ionizing radiation, and a large signal circuit model of the IMPATT diode was developed which correlates well with experimental measurements.
Journal ArticleDOI
The effect of injecting contacts on avalanche diode performance
D.R. Decker,C.N. Dunn,H.B. Frost +2 more
TL;DR: In this article, the dependence of the minority carrier injection ratio of the metal-semiconductor barrier upon current density has been measured and quantitatively modeled, including the effects of injection at the contact.
Journal ArticleDOI
Dependence of the read diode characteristics on the current multiplication factor in the avalanche zone
TL;DR: In this paper, the effect of the finite current multiplication factor in the avalanche zone on the impedance of a Read diode has been investigated and the magnitude of negative resistance has been found to decrease with the lowering of the multiplication factor while the reactance does not appreciably change.
Journal ArticleDOI
Effect of finite current multiplication factor in the avalanche zone on the high-frequency noise properties of read diodes
TL;DR: In this article, the high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, have been analyzed, and it is shown that the open-circuit noise voltage and the noise figure of the diode are reduced with the lowering of the current multiplication factors.