Conductive cooling in white organic light emitting diode for enhanced efficiency and life time
TL;DR: In this article, the authors demonstrate white organic light emitting diodes with enhanced efficiency (26.8 lm/W) and life time (∼11,000 h) by improved heat dissipation through encapsulation composed of a metal (Cu, Mo, and Al) and mica sheet joined using thermally conducting epoxy.
Abstract: We demonstrate white organic light emitting diodes with enhanced efficiency (26.8 lm/W) and life time (∼11 000 h) by improved heat dissipation through encapsulation composed of a metal (Cu, Mo, and Al) and mica sheet joined using thermally conducting epoxy. Finite element simulation is used to find effectiveness of these encapsulations for heat transfer. Device temperature is reduced by about 50% with the encapsulation. This, consequently, has improved efficiency and life time by about 30% and 60%, respectively, with respect to glass encapsulation. Conductive cooling of device is suggested as the possible cause for this enhancement.
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TL;DR: In this article, the variation in the optical and geometrical properties of individual organic layers to be used for thermally damaged top-emission organic light-emitting diodes (TEOLEDs) was reported.
Abstract: This paper reports the variation in the optical and geometrical properties of individual organic layers to be used for thermally damaged top-emission organic light-emitting diodes (TEOLEDs). The copper deposited on the back of TEOLEDs is employed as a thermal facilitator, and a certain thermal damage occurs to the organic layers and devices. The phosphorescent host material 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) is rapidly damaged to a significant extent owing to the low glass transition temperature (Tg), which also changes its optical and geometrical surface properties. Although the optical properties of the hole transport layer, N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) were changed slightly, the surface morphology was changed significantly. Despite having a higher Tg, the exciton blocking layer, tris(4-carbazoyl-9-ylphenyl)amine (TCTA), shows notable variations in optical properties and surface morphology due to heat exposure. Surprisingly, the electroluminescence spectra and micro-cavity are affected by increasing temperature without any considerable changes in device performance. Hence, this study reveals that besides Tg, the surface morphologies and thicknesses of the organic layers are also important factors in the annealing process and play a vital role in causing thermal damage to TEOLEDs.
References
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TL;DR: In this paper, a water-cooled integral heat sink for silicon integrated circuits has been designed and tested at a power density of 790 W/cm2, with a maximum substrate temperature rise of 71°C above the input water temperature.
Abstract: The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.
3,666 citations
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TL;DR: An improved OLED structure which reaches fluorescent tube efficiency and focuses on reducing energetic and ohmic losses that occur during electron–photon conversion, which could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.
Abstract: The development of white organic light-emitting diodes (OLEDs) holds great promise for the production of highly efficient large-area light sources. High internal quantum efficiencies for the conversion of electrical energy to light have been realized. Nevertheless, the overall device power efficiencies are still considerably below the 60-70 lumens per watt of fluorescent tubes, which is the current benchmark for novel light sources. Although some reports about highly power-efficient white OLEDs exist, details about structure and the measurement conditions of these structures have not been fully disclosed: the highest power efficiency reported in the scientific literature is 44 lm W(-1) (ref. 7). Here we report an improved OLED structure which reaches fluorescent tube efficiency. By combining a carefully chosen emitter layer with high-refractive-index substrates, and using a periodic outcoupling structure, we achieve a device power efficiency of 90 lm W(-1) at 1,000 candelas per square metre. This efficiency has the potential to be raised to 124 lm W(-1) if the light outcoupling can be further improved. Besides approaching internal quantum efficiency values of one, we have also focused on reducing energetic and ohmic losses that occur during electron-photon conversion. We anticipate that our results will be a starting point for further research, leading to white OLEDs having efficiencies beyond 100 lm W(-1). This could make white-light OLEDs, with their soft area light and high colour-rendering qualities, the light sources of choice for the future.
2,874 citations
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TL;DR: This device challenges incandescent sources by exhibiting total external quantum and power efficiencies that peak at 18.7 ± 0.6 lm W-1, respectively, and two distinct modes of energy transfer within this device serve to channel nearly all of the triplet energy to the phosphorescent dopants, retaining the singlet energy exclusively on the blue fluorescent dopant.
Abstract: Lighting accounts for approximately 22 per cent of the electricity consumed in buildings in the United States, with 40 per cent of that amount consumed by inefficient (approximately 15 lm W(-1)) incandescent lamps. This has generated increased interest in the use of white electroluminescent organic light-emitting devices, owing to their potential for significantly improved efficiency over incandescent sources combined with low-cost, high-throughput manufacturability. The most impressive characteristics of such devices reported to date have been achieved in all-phosphor-doped devices, which have the potential for 100 per cent internal quantum efficiency: the phosphorescent molecules harness the triplet excitons that constitute three-quarters of the bound electron-hole pairs that form during charge injection, and which (unlike the remaining singlet excitons) would otherwise recombine non-radiatively. Here we introduce a different device concept that exploits a blue fluorescent molecule in exchange for a phosphorescent dopant, in combination with green and red phosphor dopants, to yield high power efficiency and stable colour balance, while maintaining the potential for unity internal quantum efficiency. Two distinct modes of energy transfer within this device serve to channel nearly all of the triplet energy to the phosphorescent dopants, retaining the singlet energy exclusively on the blue fluorescent dopant. Additionally, eliminating the exchange energy loss to the blue fluorophore allows for roughly 20 per cent increased power efficiency compared to a fully phosphorescent device. Our device challenges incandescent sources by exhibiting total external quantum and power efficiencies that peak at 18.7 +/- 0.5 per cent and 37.6 +/- 0.6 lm W(-1), respectively, decreasing to 18.4 +/- 0.5 per cent and 23.8 +/- 0.5 lm W(-1) at a high luminance of 500 cd m(-2).
2,013 citations
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TL;DR: An ac technique for measuring the thermal conductivity of dielectric solids between 30 and 750 K is described in this article, which can be applied to bulk amorphous solids and crystals.
Abstract: An ac technique for measuring the thermal conductivity of dielectric solids between 30 and 750 K is described This technique, the 3ω method, can be applied to bulk amorphous solids and crystals as well as amorphous films tens of microns thick Errors from black‐body radiation are calculated to be less than 2% even at 1000 K Data for a‐SiO2, Pyrex 7740, and Pyroceram 9606 are compared to results obtained by conventional techniques
1,582 citations
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TL;DR: In this article, the authors measured the currentvoltage and electroluminescence characteristics of single-heterojunction, vacuum-deposited organic light-emitting devices (OLEDs) over a wide range of materials, temperatures, and currents.
Abstract: We measure the current–voltage and electroluminescencecharacteristics of single‐heterojunction, vacuum‐deposited organic light‐emitting devices(OLEDs) over a wide range of materials, temperatures, and currents. We find that the current is limited by a large density of traps with an exponential energy distribution below the lowest unoccupied molecular orbital. The characteristic trap depth is 0.15 eV. Furthermore, in metal–quinolate‐based devices,electroluminescence originates from recombination of Frenkel excitons, and its temperature dependence is consistent with the excitons being formed by Coulombic relaxation of the trapped electrons with holes injected from the counter electrode. By semiempirical molecular orbital modeling, we find that the trap distribution obtained from the current–voltage characteristics is consistent with a distribution in the metal–quinolate molecular conformations which result in a continuous, exponential distribution of allowed states below the lowest unoccupied molecular orbital. We discuss the implications of the intrinsic relationship between electroluminescence and current transport in OLEDs for the optimization of efficiency and operating voltage in these devices.
815 citations