Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer.
Xiaolong Zhao,Xiaolong Zhao,Xiaolong Zhao,Sen Liu,Sen Liu,Jiebin Niu,Jiebin Niu,Lei Liao,Qi Liu,Qi Liu,Xiangheng Xiao,Hangbing Lv,Hangbing Lv,Shibing Long,Shibing Long,Writam Banerjee,Writam Banerjee,Wenqing Li,Shuyao Si,Ming Liu,Ming Liu +20 more
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TLDR
Results directly confirm that CF formation is confined through the nanohole of graphene due to the localized cation injection, and the novel Cu/nanohole-graphene/HfO2 /Pt CBRAM device shows improvement of uniformity, endurance, and retention characteristics, because the cation injections is limited by the nanhole graphene.Abstract:
Conductive-bridge random access memory (CBRAM) is considered a strong contender of the next-generation nonvolatile memory technology. Resistive switching (RS) behavior in CBRAM is decided by the formation/dissolution of nanoscale conductive filament (CF) inside RS layer based on the cation injection from active electrode and their electrochemical reactions. Remarkably, RS is actually a localized behavior, however, cation injects from the whole area of active electrode into RS layer supplying excessive cation beyond the requirement of CF formation, leading to deterioration of device uniformity and reliability. Here, an effective method is proposed to localize cation injection into RS layer through the nanohole of inserted ion barrier between active electrode and RS layer. Taking an impermeable monolayer graphene as ion barrier, conductive atomic force microscopy results directly confirm that CF formation is confined through the nanohole of graphene due to the localized cation injection. Compared with the typical Cu/HfO2 /Pt CBRAM device, the novel Cu/nanohole-graphene/HfO2 /Pt device shows improvement of uniformity, endurance, and retention characteristics, because the cation injection is limited by the nanohole graphene. Scaling the nanohole of ion barrier down to several nanometers, the single-CF-based CBRAM device with high performance is expected to achieve by confining the cation injection at the atomic scale.read more
Citations
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Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
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A comprehensive review on emerging artificial neuromorphic devices
TL;DR: A comprehensive review on emerging artificial neuromorphic devices and their applications is offered, showing that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry.
Journal ArticleDOI
Vacancy-Induced Synaptic Behavior in 2D WS 2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing.
Xiaobing Yan,Xiaobing Yan,Qianlong Zhao,Andy Paul Chen,Jianhui Zhao,Zhenyu Zhou,Jingjuan Wang,Hong Wang,Lei Zhang,Xiaoyan Li,Zuoao Xiao,Kaiyang Wang,Cuiya Qin,Gong Wang,Yifei Pei,Hui Li,Deliang Ren,Jingsheng Chen,Qi Liu +18 more
TL;DR: High-performance and low-power consumption memristors based on 2D WS2 with 2H phase are demonstrated, which show fast ON (OFF) switching times, low program current in the ON state, and SET (RESET) energy reaching the level of femtojoules.
Journal ArticleDOI
Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects
Xiaolong Zhao,Xiaolong Zhao,Jun Ma,Xiangheng Xiao,Qi Liu,Qi Liu,Lin Shao,Di Chen,Sen Liu,Jiebin Niu,Jiebin Niu,Xumeng Zhang,Yan Wang,Rongrong Cao,Wei Wang,Zengfeng Di,Hangbing Lv,Hangbing Lv,Shibing Long,Shibing Long,Ming Liu,Ming Liu +21 more
TL;DR: By centralizing/decentralizing the CF distribution, this current-retention dilemma of cation-based RS devices is broken for the first time and will instruct the future implementation of high-density 3D integration of RS memory immune to crosstalk issues.
Journal ArticleDOI
Challenges and Applications of Emerging Nonvolatile Memory Devices
TL;DR: Compared to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security.
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Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Journal ArticleDOI
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Zhongrui Wang,Saumil Joshi,Sergey Savel'ev,Hao Jiang,Rivu Midya,Peng Lin,Miao Hu,Ning Ge,John Paul Strachan,Zhiyong Li,Qing Wu,Mark Barnell,Geng Lin Li,Huolin L. Xin,R. Stanley Williams,Qiangfei Xia,Jianhua Yang +16 more
TL;DR: The diffusive Ag-in-oxide memristor and its dynamics enable a direct emulation of both short- and long-term plasticity of biological synapses, representing an advance in hardware implementation of neuromorphic functionalities.