Journal ArticleDOI
Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides
R. Pasternak,Amitabh Chatterjee,Y. V. Shirokaya,B.K. Choi,Z. Marka,J. K. Miller,Royal G. Albridge,Sergey N. Rashkeev,Sokrates T. Pantelides,Ronald D. Schrimpf,Daniel M. Fleetwood,Norman Tolk +11 more
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In this article, the role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed.Abstract:
Radiation induced leakage current in a variable-thickness SiO/sub 2/-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results.read more
Citations
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TUNNELING PHENOMENA IN SOLIDS. Lectures Presented at the 1967 NATO Advanced Study Institute at Risoe, Denmark, June 19--30, 1967.
E. Burstein,S. . Lundqvist +1 more
Journal ArticleDOI
Optical probing of a silicon integrated circuit using electric-field-induced second-harmonic generation
TL;DR: In this article, the authors used the electric field induced second-harmonic generation effect to detect electrical signals present on a complementary metal-oxide-semiconductor (CMOS) integrated circuit in a noncontact geometry.
Development of a high-brightness electron beam system towards femtosecond microdiffraction and imaging and its applications
TL;DR: In this paper, a high-brightness ultrafast electron beam column equipped with a 100 keV Pierce photoelectron gun and an RF compressor was developed for nano-structured interfaces.
Journal ArticleDOI
Multiple Upsets Induced by Protons and Neutrons in Electronic Devices
TL;DR: In this paper, upset cross-section data in memory integrated circuits induced by protons with an energy of 1000 MeV and pixels with large value of dark current (spikes) in optoelectronic devices irradiated by neutrons with a spectrum similar to the spectrum of atmospheric neutrons have been presented.
References
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Book
The Science and Engineering of Microelectronic Fabrication
TL;DR: In this paper, the authors present an overview of the state-of-the-art in the field of microelectronic fabrication, focusing on the hot processing and ion implantation processes.
Journal ArticleDOI
Hydrogen electrochemistry and stress-induced leakage current in silica
Peter E. Blöchl,James H. Stathis +1 more
TL;DR: In this article, hydrogen-related defects in oxygen-deficient silica, representing the material of a thermal gate oxide, were analyzed using first-principles calculations, and the neutral hydrogen bridge was identified as the trap responsible for stress-induced leakage current, a forerunner of dielectric breakdown in metaloxide-semiconductor devices.
Journal ArticleDOI
Characterization of semiconductor interfaces by second-harmonic generation
TL;DR: In this article, the authors present a comprehensive overview of recent accomplishments, current understandings and future directions in optical second-harmonic generation at Si/SiO2 interfaces, including the macroscopic and microscopic aspects of the second-order nonlinear optical effects at buried semiconductor interfaces.
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