Journal ArticleDOI
Contaminants on chemically etched silicon surfaces: LEED-Auger method
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In this paper, a quantitative analysis of impurities on chemically etched Si(111) and (100) faces has been made using LEED and Auger electron spectroscopy.About:
This article is published in Surface Science.The article was published on 1970-11-01. It has received 81 citations till now. The article focuses on the topics: Auger electron spectroscopy.read more
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Gallium arsenide and other compound semiconductors on silicon
TL;DR: In this article, the physics of the growth mechanisms, characterization of epitaxial structures and device properties of GaAs and other compound semiconductors on Si are reviewed, and the nontrivial problems associated with the heteroepitaxial growth schemes and methods that are generally applied in the growth of lattice mismatched and polar on nonpolar material systems are described in detail.
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Auger electron spectroscopy
TL;DR: Auger Electron Spectroscopy has recently emerged as one of the most sensitive methods of surface analysis and is becoming widely accepted due to the relative simplicity of the LEED-Auger and cylindrical mirror analyzers as mentioned in this paper.
Journal ArticleDOI
Preparation of atomically clean surfaces of selected elements: A review
TL;DR: In this article, a review of in-situ surface cleaning procedures for seventy four of the elements having vapor pressures below 1.3 × 10−7 Pa at room temperature have been reviewed and evaluated.
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Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
TL;DR: In this paper, the epitaxial growth of GaAs and AlGaAs on (100) oriented Si substrates by molecular beam epitaxy was studied in situ by reflection high-energy electron diffraction.
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Room‐temperature interfacial reaction in Au‐semiconductor systems
TL;DR: In this article, the authors used Auger electron spectroscopy to study Au-evaporated film-semiconductor systems and found that a considerable fraction of atoms constituting the semiconductors accumulated on the surfaces of Au films, indicating ready interfacial interaction between these materials.
References
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Journal ArticleDOI
Auger electron spectroscopy
TL;DR: Auger Electron Spectroscopy has recently emerged as one of the most sensitive methods of surface analysis and is becoming widely accepted due to the relative simplicity of the LEED-Auger and cylindrical mirror analyzers as mentioned in this paper.
Journal ArticleDOI
Auger Electron Spectroscopy of fcc Metal Surfaces
P. W. Palmberg,T. N. Rhodin +1 more
TL;DR: In this article, the energy spectra of Auger electrons from clean Au, Ag, Cu, Pd, and Ni surfaces have been determined, and the mean escape depth for Ag (without significant loss of energy) varies between 4 and 8 A for energies of 72 and 362 eV, respectively.
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Auger Peaks in the Energy Spectra of Secondary Electrons from Various Materials
TL;DR: In this article, the energy spectra of secondary electrons from carbon, beryllium, aluminum, nickel, copper, barium, platinum and barium have been measured with equipment of high stability and sensitivity.
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Sur l'effet photoélectrique composé
TL;DR: In this article, C.-T.-R. Wilson observed that l'energie liberee par des deplacements d'electrons dans les niveaux d'un atome excite peut se porter tout entiere sur un autre electron du meme atome, and le chasser sous forme de rayon β.
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Use of LEED Apparatus for the Detection and Identification of Surface Contaminants
R. E. Weber,W. T. Peria +1 more
TL;DR: In this article, a low energy electron diffraction (LEED) system has been used to study the energy spectra of Auger electrons from clean and alkali-covered Ge and Si surfaces.