Controlling blue-violet electroluminescence of Ge-rich Er-doped SiO2 layers by millisecond annealing using flash lamps
TL;DR: In this paper, the authors investigated the systematic evolution of the 400 nm electroluminescence (EL) with increasing flash lamp annealing (FLA) temperature from 800 to 1100°C in an Er-doped Ge-rich metaloxide semiconductor structure.
Abstract: Systematic evolution of the 400 nm electroluminescence (EL) with increasing flash lamp annealing (FLA) temperature from 800 to 1100 °C in an Er-doped Ge-rich metal-oxide semiconductor structure is presented No significant change in the 1535 nm Er EL is observed with increasing FLA temperature Enhancement of the 400 nm EL decay time with rising FLA temperature is found to be associated with recrystallization of the damaged Ge clusters in the absence of Ge outdiffusion The 400 nm EL quenching with continuous charge injection process is also discussed within the device operation time
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TL;DR: In this paper, the appearance of the 1.53μm Er photoluminescence from Er-doped Ge-rich SiO2 layers is investigated in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+.
Abstract: The furnace and flash-lamp annealing (FLA) temperature dependent variation in the room temperature 1.53 μm Er photoluminescence (PL) from Er-doped Ge-rich SiO2 layers is investigated. The appearance of the 1.53 μm Er PL is discussed in the framework of the phonon-assisted fluorescent resonant energy transfer from Ge-related luminescence-centers (LCs) to the Er3+. Detailed analyses suggest that in case of FLA the decrease in the 1.53 μm Er PL intensity is governed by the temperature dependent recrystallization of Ge nanoclusters, while for furnace-annealing it is associated with the reduction in the LC-Er3+ coupling due to Ge out-diffusion and the formation of Er-rich clusters with increasing temperature.
3 citations
15 Oct 2017-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, the formation and charge state transition energies for the rare earth (RE) substitutional impurities in germanium (RE Ge ) were calculated using the Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density functional theory.
Abstract: The Heyd, Scuseria, and Ernzerhof (HSE06) hybrid functional by means of density functional theory has been used to model the electronic and structural properties of rare earth (RE) substitutional impurities in germanium ( RE Ge ) The formation and charge state transition energies for the RE Ge (RE = Ce, Pr, Er and Eu) were calculated The energy of formation for the neutral charge state of the RE Ge lies between −014 and 313 eV The formation energy result shows that the Pr dopant in Ge ( Pr Ge ) has the lowest formation energy of −014 eV, and is most energetically favourable under equilibrium conditions The RE Ge induced charge state transition levels within the band gap of Ge Shallow acceptor levels were induced by both the Eu ( Eu Ge ) and Pr ( Pr Ge ) dopants in Ge The Ce Ge and Er Ge exhibited properties of negative-U ordering with effective-U values of −085 and −107 eV, respectively
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TL;DR: An experimental study of the luminescence time decay in porous silicon as a function of temperature, excitation, and observation energies is reported.
Abstract: An experimental study of the luminescence time decay in porous silicon as a function of temperature, excitation, and observation energies is reported. The decay line shape is well described by a stretched exponential for a variety of experimental conditions. A hierarchy of waiting times for carrier hopping, of intersite distances, and of site energies result from the analysis of our data.
223 citations
Book•
05 Aug 1991
TL;DR: Theoretically, the existence of excess electron mobility in dielectric liquids has been studied in this paper, with a focus on the physics of high-energy electron transport in condensed organic dielectrics.
Abstract: Primary Interactions of Low-Energy Electrons in Condensed Matter (Leon Sanche). Hot Electron Transport in Condensed Organic Dielectrics (Richard M. Marsolais, Eduard A. Cartier, and Peter Pfluger). Thermalization of Subexcitation Electrons in Dense Molecular Media (Rene Voltz). Excess Electron Life History by Dielectric Relaxation (Robert Schiller). Electronic Energy Levels in Non-Polar Dielectric Liquids (Werner F. Schmidt). Mobility of Excess Electrons in Dielectric Liquids: Experiment and Theory (Raul C. Munoz). Quantum Calculations on Excess Electrons in Disordered Media (David F. Coker and Bruce J. Berne). Electron Solvation in Polar Liquids (Jean-Paul Jay-Gerin and Christiane Ferradini). Excess Electrons in Polar Matrices (Masaaki Ogasawara). Hot Electron Transport and Trapping in Silicon Dioxide (Donelli J. Di Maria and Massimo V. Fischetti). The Fate of Excess Electrons Generated by Electrochemical Methods (Anatol M. Brodsky). Excess Electrons in Microheterogeneous Systems (Annette Bernas, Dora Grand, and Simone Hautecloque). Intramolecular Electron Transfer Reactions in Peptides and Proteins (Moshe Faraggi and Michael H. Klapper).
169 citations
Book•
26 Nov 1997
TL;DR: In this article, the authors present the history of silicon MOS devices and their application in DRAM memories, as well as a detailed analysis of the current state of the DRAM memory.
Abstract: Content.- 1. Introduction.- 1.1 The History of Silicon MOS Devices.- 1.2 Scaling Issues in ULSIs.- 1.3 Requirements on Gate Dielectrics: Depending on Applications.- 1.3.1 Standard CMOS Logics.- 1.3.2 Storage Capacitors in DRAM Memories.- 1.3.3 Nonvolatile Memories.- 2. MIS Structure.- 2.1 Ideal MIS System.- 2.1.1 Theory of Semiconductor Surfaces.- 2.1.2 Ideal MIS Characteristics.- 2.2 Real System: Si-SiO2 MOS Technology.- 2.2.1 Band Diagram.- 2.2.2 Charges.- 2.3 Carrier Transport in Dielectric Films.- 2.4 Electrical Measurements.- 2.4.1 Measurement Setup.- 2.4.2 Steady-State High-Low Frequency C-V Method.- (a) Film Thickness.- (b) Work Function and Fixed-Charge Density.- (c) Interface-State Density.- 2.4.3 Other Measurements of Interface States.- (a) High-Frequency Method.- (b) Transient Spectroscopy.- (c) Charge-Pumping Method.- 2.4.4 Dielectric-Trap Charges.- (a) Carrier Injection.- (b) Trap Density and Capture Cross Section.- (c) Distribution of Traps.- 3. MOS Field-Effect Transistor.- 3.1 Classical MOS Transistor.- 3.1.1 ON-State: Linear and Saturation Regions.- 3.1.2 OFF-State: Subthreshold Region.- 3.2 MOSFET Parameters.- 3.2.1 Subthreshold Swing.- 3.2.2 Threshold Voltage.- (a) n-FETs with VT Adjustment.- (b) Buried-Channel p-FETs.- 3.2.3 Mobility.- (a) Velocity Saturation Along the Lateral Field.- (b) Inversion-Layer Mobility.- (c) Universal Relation for the Effective Normal Field.- 3.2.4 Channel Length.- 3.2.5 Saturation Parameters.- 3.3 Scaling.- 3.3.1 The Scaling Law.- 3.3.2 Practical Scaling.- 3.3.3 Scaling Limitations in MOS Technology.- (a) Small-Geometry Effects.- (b) Limited Performance Under High Fields.- (c) Hot-Carrier Effects and Drain Engineering.- (d) Gate-Induced Drain Leakage.- (e) Dielectric Reliability and Gate Electrodes.- 3.4 Device Integration.- 3.4.1 CMOS Circuit Performance.- 3.4.2 Process Integration.- 3.4.3 Yield in ULSI Technology.- 4. Thermally Grown Silicon Oxide.- 4.1 Processing.- 4.1.1 Pre-Processing.- 4.1.2 Oxidation of Silicon.- 4.1.3 Post-Processing.- 4.2 Electrical and Physical Characteristics.- 4.2.1 Fixed Charges and Interface States.- 4.2.2 Mobility.- 4.2.3 Atomic Configurations.- 4.3 Charge-Trapping Characteristics.- 4.3.1 Electron Trapping.- 4.3.2 Hole Trapping.- 4.3.3 Interface-State Generation.- 4.3.4 Radiation Damage.- 4.3.5 High-Field Stress.- 4.4 Dielectric Breakdown.- 4.4.1 Time-Zero Dielectric Breakdown.- 4.4.2 Time-Dependent Dielectric Breakdown.- (a) Intrinsic Breakdown.- (b) Extrinsic Breakdown.- (c) Thickness Dependence.- 4.4.3 Application-Dependent Breakdowns.- (a) Electrode-Related Breakdown.- (b) Isolation-Related Breakdown.- (c) Oxide Integrity Degradation Near Gate Edges.- (d) Nonvolatile Memories.- 4.5 Hot-Carrier-Induced Degradation.- 4.5.1 Degradation in n-Channel FETs.- 4.5.2 Degradation in p-Channel FETs.- 4.5.3 Increase in GIDL Current.- 4.6 Other Silicon Oxides.- 4.7 Summary and Future Trends.- 5. Thermally Nitrided Oxides: for Flash Memories.- 5.1 Processing and Material Properties.- 5.1.1 Thermal Nitridation.- 5.1.2 Nitridation of SiO2 Films in NH3.- (a) Processing Issues.- (b) Rapid Thermal Processing.- (c) Nitridation of SiO2.- 5.1.3 Post-Nitridation Anneal.- 5.1.4 Hydrogen Impurities.- 5.1.5 Nitridation in N2O.- 5.1.6 Atomic Configurations.- 5.2 Electrical Characteristics and Performance.- 5.2.1 Film Thickness and Dielectric Constant.- 5.2.2 Charges.- 5.2.3 Mobility.- (a) Electron Mobility.- (b) Hole Mobility.- (c) Discussion on the.Mobility Modulation.- 5.2.4 MOSFET Characteristics.- 5.3 Dielectric Reliability.- 5.3.1 Carrier Transport and Traps.- 5.3.2 High-Field-Induced Degradation.- (a) Dependence on the Fabrication Condition.- (b) A Model for Electron Trapping.- (c) A Model for Interface-State Generation.- 5.3.3 Dielectric Breakdown.- (a) Charge-to-Breakdown.- (b) Extrinsic Breakdown.- 5.3.4 Radiation Damage.- 5.3.5 Device Applications.- (a) Nonvolatile Memories.- (b) CMOSFETs with Advanced Gates.- 5.4 Issues Inherent to Scaled MOSFETs.- 5.4.1 Hot-Carrier Effects in n-FETs.- (a) Substrate and Gate Current.- (b) Hot-Carrier-Induced Degradation.- (c) Device Lifetime.- 5.4.2 Hot-Carrier Effects in p-FETs.- 5.4.3 GIDL Effects.- 5.4.4 Overall Consideration.- 5.5 Summary and Outlook.- 6. High-Dielectric Constant Films: for Passive Capacitance.- 6.1 Silicon Nitride (Si3N4).- 6.1.1 MNOS Device.- 6.1.2 Oxide-Nitride-Oxide.- 6.2 Tantalum Oxide (Ta2O5.- 6.3 Ferroelectrics.- 6.3.1 What is the Meaning of "Ferroelectric"?.- (a) Ferroelectric Properties.- (b) Issues Common to ULSI Applications.- 6.3.2 Application to DRAM Storage Capacitors.- 6.3.3 Application to Nonvolatile Memories.- References.
115 citations