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COOLMOS^ -a new milestone in high voltage power MOS
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The article was published on 1999-01-01 and is currently open access. It has received 115 citations till now. The article focuses on the topics: High voltage.read more
Citations
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Journal ArticleDOI
State-of-the-art, single-phase, active power-factor-correction techniques for high-power applications - an overview
Milan M. Jovanovic,Yungtaek Jang +1 more
TL;DR: The merits and limitations of several PFC techniques used in today's network-server and telecom power supplies to maximize their conversion efficiencies are discussed, and the effect of recent advancements in semiconductor technology on the performance and design considerations of PFC converters is discussed.
Journal ArticleDOI
The future of power semiconductor device technology
TL;DR: Recently, significant improvements in the performance of silicon-power MOSFETs has been achieved by using innovative vertical structures with charge coupled regions, and silicon IGBTs continue to dominate the medium- and high-voltage application space sue to scaling of their voltage ratings and refinements to their gate structure achieve by using very large scale integration (VLSI) technology and trench gate regions.
Proceedings ArticleDOI
Gate drive design considerations for high voltage cascode GaN HEMT
TL;DR: In this paper, the authors investigated gate drive design for high voltage gallium nitride (GaN) high electron-mobility transistors (HEMT) in a cascade structure.
Patent
A power mosfet having laterally three-layered structure formed among element isolation regions
Yasunori Usui,Shigeo Kouzuki +1 more
TL;DR: In this paper, a three-layer NPN with a source and gate on an upper surface of the three-layered pillar, and a drain on a lower surface thereof is presented.
Journal ArticleDOI
Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application
L. Lorenz,G. Deboy,I. Zverev +2 more
TL;DR: In this paper, a new CoolMOS C3 generation combines extremely high on-state conductivity with ultrafast switching speed at full pulse current capability, which results in a reduced current capability of the device at low gate voltages.
References
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.