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Open AccessJournal ArticleDOI

Coupled parallel waveguide semiconductor laser

S. Mukai, +6 more
- 01 Mar 1984 - 
- Vol. 44, Iss: 5, pp 478-480
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TLDR
In this article, the operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated One of the cavities (‘‘control’’ cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser.
Abstract: 
The operation of a new type of tunable laser, where the two separately controlled individual lasers are placed vertically in parallel, has been demonstrated One of the cavities (‘‘control’’ cavity) is operated below threshold and assists the longitudinal mode selection and tuning of the other laser With a minor modification, the same device can operate as an independent two‐wavelength laser source

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Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Downloaded 24 May 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Citations
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Patent

Optically stabilized feedback amplifier

Robert Schimpe
TL;DR: In this article, an arrangement for operation as an optical feedback amplifier which is composed of a DFB laser whose grating selects a wavelength that differs by so much from the wavelength at which the amplification medium has a maximum gain that a constant amplification effect at this beamed-in wavelength is achieved by a progressive quenching of the emission of this wavelength selected by the grating given external optical irradiation via a coupled waveguide of light having a wavelength in the proximity of the wavelength of the maximum gain.
Patent

Multiple wavelength light emitting devices.

Irfan Camlibel, +2 more
TL;DR: In this paper, a dual wavelength structure where two edge-emitting devices are bonded with p-regions adjacent is presented, where the bonding medium is a conductive material that forms a common electrode between the devices.
Journal ArticleDOI

Phase-locked arrays of buried-ridge InP/InGaAsP diode lasers

Eli Kapon, +3 more
- 01 Jul 1986 - 
TL;DR: In this article, the field patterns and the modal gains of the array supermodes were calculated by using a simple waveguide model, and the theoretical results showed that buried-ridge arrays can be designed such that only the fundamental supermode is excited.
Journal ArticleDOI

Single‐mode very wide tunability in laterally coupled semiconductor lasers with electrically controlled reflectivities

Giora Griffel, +3 more
- 29 Apr 1991 - 
TL;DR: In this paper, a monolithic, laterally coupled semiconductor stripe laser with a tuning range of 14.2 nm has been demonstrated. But the tuning range is not yet known for a single longitudinal mode spectrum.
Journal ArticleDOI

Rate equations analysis of phase-locked semiconductor laser arrays under steady state conditions

Joseph Katz, +3 more
- 01 Aug 1984 - 
TL;DR: In this paper, a rate equation analysis of phase-locked diode laser arrays was carried out and it was found that for given (Laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density.
References
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Journal ArticleDOI

Coupled-mode theory for guided-wave optics

Amnon Yariv
- 01 Sep 1973 - 
TL;DR: In this article, the problem of propagation and interaction of optical radiation in dielectric waveguides is cast in the coupled-mode formalism, which is useful for treating problems involving energy exchange between modes.
Journal ArticleDOI

High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers

Won-Tien Tsang, +2 more
- 15 Apr 1983 - 
TL;DR: In this paper, the cavity mode enhanced frequency modulation (CME-FM) was proposed for direct frequency modulation using the newly developed cleaved-coupled-cavity (C3) semiconductor laser.
Journal ArticleDOI

Single‐mode operation of coupled‐cavity GaInAsP/InP semiconductor lasers

K. J. Ebeling, +3 more
- 01 Jan 1983 - 
TL;DR: In this paper, a two-section GaInAsP/InP laser was shown to operate in a single longitudinal mode under high-speed pulsed current modulation, where the length of the emitted monomode light pulses is less than 500 ps.
Journal ArticleDOI

Longitudinal-mode control in integrated semiconductor laser phased arrays by phase velocity matching

E. Kapon, +3 more
- 15 Jan 1984 - 
TL;DR: In this article, the spectrum of semiconductor laser arrays with separate contacts is investigated and the individual laser currents can be selected such that the array operates in a single longitudinal mode in contrast to the multimode nature of its individual constituents.
Journal ArticleDOI

Highly reliable and mode‐stabilized operation in v‐channeled substrate inner stripe lasers on p‐GaAs substrate emitting in the visible wavelength region

Toshiro Hayakawa, +5 more
- 01 Nov 1982 - 
TL;DR: In this article, the authors demonstrated the reliability and mode-stabilized operation of v-channeled substrate inner stripe (VSIS) lasers emitting in the visible wavelength region.