Critical short-timescale transient processes of a GaN+Si hybrid switching module used in zero-voltage-switching applications
Citations
78 citations
Cites background or methods from "Critical short-timescale transient ..."
...A preliminary analysis on the Si-IGBT- and SiC-MOSFET-based HyS was presented in the literature [8]–[12]; analysis on the SiIGBT- and SiC-JFET-based HyS was presented in [8] and [14], and analysis on a Si-IGBT- and gallium-nitride- (GaN) high electron-mobility transistor- based HyS was presented in [12] and [13]....
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...Recent literature, such as [8]–[13], adapted this HyS to utilize the benefits of presently available WBG devices....
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18 citations
Cites result from "Critical short-timescale transient ..."
...Such a phenomenon has been observed in our previous work [14]....
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12 citations
6 citations
References
355 citations
"Critical short-timescale transient ..." refers background in this paper
...Due to its ultra-fast switching transition and outstanding thermal capability, WBG devices are excellent candidates for high-efficiency and high-power-density power electronics converters [1-3]....
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48 citations
"Critical short-timescale transient ..." refers background or methods in this paper
...Given GaN HEMTs still have much higher switching-on loss than switching off [4], zero-voltage-switching (ZVS) turn-on is still highly recommended, which is the focus of this paper....
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...In [4], it reported a 7V reverse voltage drop when using -5V to turn off GaN HEMTs....
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41 citations
"Critical short-timescale transient ..." refers result in this paper
...[6] Leif Amber and Kevork Haddad, “Hybrid Si IGBT-SiC Schottky diode modules for medium to high power applications”, IEEE Applied Power Electronics Conference and Exposition. pp.3027 – 3032, 2017....
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...Such study is rewarding to evaluate the feasibility of such hybrid approach, given the switching speed of GaN is much faster than Si and even SiC....
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...Key Words — GaN HEMT, Zero-Voltage-Switching, wide-bandgap, Finite element analysis I. INTRODUCTION GaN HEMT and SiC MOSFET are two exemplified wide-bandgap (WBG) devices....
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...A similar approach was found when paralleling Si to SiC [5,6], however not widely reported for GaN+Si yet....
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32 citations
"Critical short-timescale transient ..." refers background in this paper
...Due to its ultra-fast switching transition and outstanding thermal capability, WBG devices are excellent candidates for high-efficiency and high-power-density power electronics converters [1-3]....
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21 citations
"Critical short-timescale transient ..." refers background in this paper
...Due to its ultra-fast switching transition and outstanding thermal capability, WBG devices are excellent candidates for high-efficiency and high-power-density power electronics converters [1-3]....
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