Crystalline Oxides on Silicon: The First Five Monolayers
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In this paper, a metaloxide-semiconductor capacitor using SrTiO{sub 3} as an alternative to SiOthinsp{sub 2} yields the extraordinary result of t{sub eqlt}10 {Angstrom}.Abstract:
The long-standing problem of growing a commensurate crystalline oxide interface with silicon has been solved. Alkaline earth and perovskite oxides can be grown in perfect registry on the (001) face of silicon, totally avoiding the amorphous silica phase that ordinarily forms when silicon is exposed to an oxygen containing environment. The physics of the heteroepitaxy lies in establishing a sequenced transition that uniquely addresses the thermodynamics of a layer-by-layer energy minimization at the interface. A metal-oxide-semiconductor capacitor using SrTiO{sub 3} as an alternative to SiOthinsp{sub 2} yields the extraordinary result of t{sub eq}{lt}10 {Angstrom} . {copyright} {ital 1998} {ital The American Physical Society}read more
Citations
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Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
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References
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Book
Thermochemical properties of inorganic substances
Ihsan Barin,Ottmar Knacke +1 more
TL;DR: In this paper, a volume of tables conveying the thermochemical parameters of more than 2000 substances, cover enthalpy, entropy, chemical potential and Planck's function, and commentaries on the chemical reactions of the relevant component and indications of stability/metastability.
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Fundamental aspects of ultrathin dielectrics on si-based devices
TL;DR: In this paper, the SiO2/Si and SiOxNy/Si systems were discussed and discussed in terms of growth mechanism, processing, and analysis of (Oxy)nitridation.
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