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Proceedings ArticleDOI

Curvature compensated CMOS bandgap with sub 1V supply

TL;DR: A bandgap circuit capable of generating a reference voltage of 0.730V is described and achieves 7ppm/spl rho/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperaturerange from 0 to 60/spl deg/ centigrade.
Abstract: We describe a bandgap circuit capable of generating a reference voltage of 0.730V. The circuit is implemented in 0.18/spl mu/m CMOS technology and operates with 0.9 V supply voltage, consuming 5/spl mu/A current. The circuit achieves 7ppm/spl rho/K of temperature coefficient with supply voltage range from 0.9 to 1.5V and temperature range from 0 to 60/spl deg/ centigrade.
Citations
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Journal ArticleDOI
Lai Xinquan1, Xu Ziyou1, Li Yanming1, Ye Qiang1, Man Maoli1 
TL;DR: In this paper, the authors proposed a novel approach to the design of a high-precision CMOS voltage reference, which utilizes MOS transistors instead of bipolar transistors to generate positive and negative temperature coefficient (TC) currents summed up to a resistive load.

10 citations

Proceedings ArticleDOI
19 Jun 2014
TL;DR: The design of a low voltage area efficient current-mode CMOS bandgap reference implemented in 130 nm technology and its properties and performance limiting factors are described.
Abstract: We report on the design of a low voltage area efficient current-mode CMOS bandgap reference implemented in 130 nm technology. The conventional voltage-mode and current-mode bandgap reference architectures with their properties and performance limiting factors are described. Due to the low supply voltage V dd requirement the current-mode architecture was chosen. The simulated power dissipation P diss = 150 μW at the nominal supply voltage V DD = 1.2 V. As a result of Monte-Carlo analysis the average output reference current I REF ≈ 1 μA and its standard deviation σ = 11 nA are obtained. The reference current changes ΔI REF = 8 nA over the temperature range from 0 o C up to 100 o C. The reference current changes ΔI ref = 4 nA for the supply voltage V dd within the range from 1 V up to 1.5 V. The silicon chip area occupation is 0.07 mm 2 .

5 citations


Cites background or methods from "Curvature compensated CMOS bandgap ..."

  • ...To overcome this issue in such systems the BVR based on current-mode architecture has to be used [1-7, 9, 11-13]....

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  • ...what implies that circuit can operate at supply voltage VDD even lower than 1 V [1, 2, 4, 5, 7, 9, 12]....

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  • ...The second order temperature curvature compensation technique and its implementations are widely described in the literature [1, 5, 7-10, 14]....

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  • ...Nowadays, depending on target application, chosen technology, available power and area budget implemented BVRs are characterized by the temperature coefficients (TCs) of the order of several/dozens ppm/°C and by the reference voltage VREF dependence on the supply voltage at the level of tens part of percent [1-15]....

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Proceedings ArticleDOI
05 Jul 2010
TL;DR: The present article describes the design of a new low-voltage radiation-tolerant band gap reference circuit, designed for biasing analog modules in the slow control of the Data Handling Processor for reading DEPFET sensors in the Super KEK-B particle accelerator in Japan.
Abstract: The present article describes the design of a new low-voltage radiation-tolerant band gap reference circuit. The proposed circuit has been designed for biasing analog modules in the slow control of the Data Handling Processor for reading DEPFET sensors in the Super KEK-B particle accelerator in Japan. It has been implemented in a 90nm standard CMOS technology. The BGR circuit provides a sub-1V voltage reference. It is possible to operate the circuit with 1 and 1.2V supplies. For that, a trimming net based on resistors was included. Tolerance to radiation is achieved by means of enclosed layout transistors and guard rings. The total area of the BGR is 181x110μm2. The power consumption is set at 18.70uA for the 1V supply case and at 55.18uA for the 1.2V supply case.

2 citations


Cites methods from "Curvature compensated CMOS bandgap ..."

  • ...PROPOSED BGR CIRCUIT In this work, and considering only first-order temperature compensation, we present an enhancement of the circuit proposed by Tom in [11]....

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  • ...The latter was used by references Malcovati [10] and Tom [11] in their lowvoltage BiCMOS bandgap designs....

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  • ...In this work, and considering only first-order temperature compensation, we present an enhancement of the circuit proposed by Tom in [11]....

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Journal ArticleDOI
TL;DR: This paper presents on-chip complementary metal oxide semiconductor low voltage and current reference circuits design methodologies for low voltage requirements based on the bandgap reference and beta multiplier circuits.
Abstract: With shrinking of technologies and its applications, on-chip precision low voltage and current reference generation for analog and mixed signal circuits are becoming difficult. This paper presents on-chip complementary metal oxide semiconductor low voltage and current reference circuits design methodologies for low voltage requirements. The designs are based on the bandgap reference and beta multiplier circuits. These reference circuits are prone to instability and can lock into undesired stable state of operation. To avoid these two conditions one needs to satisfy some conditions. Such issues of these reference circuits for practical implementation are discussed. Circuits like Poweron-reset circuit and startup circuits are used to avoid these state of operations. The peculiarity of theses circuits are that they can be tuned to the specific low voltage and low power requirements.
01 Jan 2007
TL;DR: In this article, the authors present an example of interdisciplinary projects rea lized under this paradigm, such as electrophysiological signal microelectromechanical systems, signal acquisition, electronic nose, telematic system for several appli cations such as sensors network, cells culture, and field e mission devices.
Abstract: One of the main challenges in technology education is how to keep up with the ever changing tools, processes, and standards dictated by newly developed tools not available at the university. Silicon foun dries currently offer custom processes that can be adapte d to develop sensors, optoelectronic devices and microelectromechanisms with a small budget. As a result, students from different scientific areas, in electr onics and electrical engineering, profit from the same idea. Another advantage of this outsourcing is the possibility of sharing circuits, laboratory experiments, and courseware among universities and among disciplines, democratizing t he educational experience and, thus, improving the formation of qualified human resources. With the knowledge of the design rules any person can submit his/her project as any of their counterparts in ano ther country. During the post-processing steps, the sens ing element can be tailored toward the specific applica tion they are designed for. Students from several backgrounds are involved in the early and later sta ges of the process, and help with debugging, as well as wi th field testing. Examples of interdisciplinary projects rea lized under this paradigm include: electrophysiological signal microelectromechanical systems, signal acquisition, electronic nose, telematic system for several appli cations such as sensors network, cells culture, and field e mission devices.

Cites background from "Curvature compensated CMOS bandgap ..."

  • ...Wi th the emergence of foundry outsourcing and of post-proces sing services, engineering education begins a modern gen eration [1] This paper discusses our experience for continuing engineering education program for teaching microele ctronics using the available resources local facilities to b uild sensors....

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References
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Book
01 Jan 1996
TL;DR: In this paper, the authors present an overview of current mirror and Opamp design and compensation for single-stage Amplifiers and Current Mirrors, as well as a comparison of the two types of Opamps.
Abstract: Partial table of contents: Integrated--Circuit Devices and Modelling. Processing and Layout. Basic Current Mirrors and Single--Stage Amplifiers. Noise Analysis and Modelling. Basic Opamp Design and Compensation. Advanced Current Mirrors and Opamps. Comparators. Switched--Capacitor Circuits. Nyquist--Rate D/A Converters. Oversampling Converters. Phase--Locked Loops. Index.

3,118 citations


"Curvature compensated CMOS bandgap ..." refers background in this paper

  • ...The complete equation for the reference voltage is given by [10]...

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  • ...Second order effects are generally compensated using extra operational amplifiers or switched capacitor structures [10]....

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Journal ArticleDOI
Hironori Banba1, Hitoshi Shiga1, Akira Umezawa1, T. Miyaba1, Toru Tanzawa1, S. Atsumi1, Koji Sakui1 
TL;DR: In this paper, the authors proposed a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, and measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.
Abstract: This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the sum of the built-in voltage of the diode V/sub f/ and the thermal voltage V/sub T/ of kT/q multiplied by a constant. Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. Measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.

820 citations


"Curvature compensated CMOS bandgap ..." refers background in this paper

  • ...Several other low voltage CMOS BGRs are proposed in [3], [4], [5] and [6]....

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Journal ArticleDOI
TL;DR: In this paper, a sub-1V bandgap voltage reference with no low threshold voltage device is introduced, where the minimum supply voltage of the proposed voltage reference is 0.98 V at 0/spl deg/C and the maximum supply current is 18 /spl mu/A.
Abstract: A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V/sub thn/ /spl ap/ |V/sub thp/| /spl ap/ 0.9 V at 0/spl deg/C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 /spl mu/A. A temperature coefficient of 15 ppm//spl deg/C from 0/spl deg/C to 100/spl deg/C is recorded after trimming. The active area of the circuit is about 0.24 mm/sup 2/.

394 citations

Journal ArticleDOI
TL;DR: A bandgap circuit capable of generating a reference voltage of 0.54 V is presented, implemented in a submicron BiCMOS technology, and achieves 5 ppm / K of accuracy without requiring additional operational amplifiers or complex circuits.
Abstract: We present a bandgap circuit capable of generating a reference voltage of 0.53 V. The circuit, implemented In a submicron BiCMOS technology, operates with a supply voltage of 1 V, consuming 92 /spl mu/W at room temperature. In the bandgap circuit proposed, we use a nonconventional operational amplifier which achieves virtually zero systematic offset, operating directly from the 1-V power supply. The bandgap architecture used allows a straightforward implementation of the curvature compensation method. The proposed circuit achieves 7.5 ppm/K of temperature coefficient and 212 ppm/V of supply voltage dependence, without requiring additional operational amplifiers or complex circuits for the curvature compensation.

387 citations


"Curvature compensated CMOS bandgap ..." refers methods in this paper

  • ...However, due to simplicity we have considered the technique given in [9]....

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  • ...In our work, a bandgap reference based on the topology presented in [9] has been designed in 0....

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Journal ArticleDOI
TL;DR: In this article, the inaccuracy of the analyses commonly used for predicting the temperature behavior of transistors and the output of bandgap reference sources is pointed out, and new accurate formulas are derived by taking into account the nonlinearity in this variation.
Abstract: The inaccuracy of the analyses commonly used for predicting the temperature behavior of the I/SUB C/-V/SUB BE/ characteristics of transistors and the output of bandgap reference sources is pointed out. The problem is traced to a basic assumption implicit in such analyses, namely that the variation of the bandgap voltage of silicon with temperature is linear; this assumption is shown to be of poor accuracy. By taking into account the nonlinearity in this variation, new accurate formulas are derived. Both the previous analyses and the proposed analysis are compared to experiment; a valuable improvement is demonstrated. Equations which should prove to value in the design of bandgap reference sources and bipolar transistor temperatures transducers are given. Higher order effects are discussed.

238 citations