D–Band RF–MEMS SPDT Switch in a $0.13~\mu$ m SiGe BiCMOS Technology

TLDR: In this paper, the authors presented a D-band (110-170 GHz) RF-MEMS based SPDT switch fabricated in a $0.13~\mu \text {m}$ SiGe BiCMOS technology.

Abstract: This letter presents a D–Band (110–170 GHz) RF–MEMS based Single–Pole Double–Throw (SPDT) switch fabricated in a $0.13~\mu \text {m}$ SiGe BiCMOS technology. The on–wafer S–parameter measurements of the RF–MEMS based SPDT switch show beyond state of the art RF performances, 1.42 dB insertion loss and 54.5 dB isolation at 140 GHz. The SPDT switch consists of a tee junction connected to two Single–Pole Single–Throw (SPST) RF–MEMS switches. The RF–MEMS switch is actuated using 60 V actuation voltage and provides less than $10~\mu \text {s}$ switch–on and switch–off times. To the best of the authors’ knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a SPDT reported in D–band.