Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
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Cites background or methods from "Deep-Level Characterization in GaN ..."
...To acquire more information on the physical origin of trap E2, we compared its Arrhenius plot to the data reported in more than 60 papers on defects in GaN-based materials and devices ([8]–[34], the full database is reported in [12])....
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...The emission and capture properties of the traps were characterized by means of drain current (isothermal) transient (DCT) measurements, with the experimental setup described in [12]....
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...2(a) and (b) suggest that the defects which are filled during OFF-state bias are located mostly under the gate (thus strongly influencing the threshold voltage without significantly changing the ON-resistance), rather than in the gate-drain access region [11], [12]....
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119 citations
Cites background from "Deep-Level Characterization in GaN ..."
...By considering the database of the deep levels in GaN- and AlGaN-based devices (see [25]), traps having an activation energy of 0....
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...By considering the database of the deep levels in GaN- and AlGaN-based devices [25], [26], the activation energy of≈ 0....
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105 citations
Cites background from "Deep-Level Characterization in GaN ..."
...However, several reports also suggested that the collapse was likely to be brought about from bulk traps in the buffer layer [79], [80]....
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95 citations
References
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"Deep-Level Characterization in GaN ..." refers background in this paper
..., the dynamic decrease in drain current experienced by the device when operated with large gate-drain voltage swings [6]....
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536 citations
"Deep-Level Characterization in GaN ..." refers background in this paper
...9eV was also reported more recently in [53] as possible charge-state transition of Carbon impurities in Nitrogen substitutional position (CN)....
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454 citations
448 citations
"Deep-Level Characterization in GaN ..." refers background in this paper
...GaN-based high electron mobility transistors (HEMTs) represent good candidates for next generation microwave and power electronics [1], [2]....
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