Defect density variation with deposition rate in snsb thin films from annealing study of electrical resistance
TL;DR: In this paper, the initial lattice distortion energy spectra of SnSb thin films of the same thickness (600 A) vacuum deposited at room temperature on glass substrates at various deposition rates were heated to a maximum temperature of about 300°C and the changes in the electrical resistance with temperature were recorded.
About: This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1977-01-01. It has received 12 citations till now. The article focuses on the topics: Thin film & Annealing (metallurgy).
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TL;DR: In this paper, it was shown that the use of Vand's original equations for the evaluation of defect density distribution in energy in as-grown thin films lead to results which are in error by at least 6% in the case of thin films vacuum deposited at room temperature.
Abstract: It is pointed out that the use of Vand’s original equations for the evaluation of defect density distribution in energy in as‐grown thin films lead to results which are in error by at least 6% in the case of thin films vacuum deposited at room temperature. Modified equations that can be applied to thin films formed at any arbitrary temperature T0 K have been obtained. It is found that except for one equation, the remaining three equations are identical to those of Vand. It has also been shown that Vand’s original equations can be applied in the case of thin films formed at an arbitrary temperature if the actual time t in the original equation is replaced by a time t0 measured as if heating had started at 0 K. Experimental plots of decay energy distribution of defect cluster density [F0(E) vs E plots] obtained using the modified equations and Vand’s original equations in the case of bismuth thin films deposited at different substrate temperatures (300–450 K) are also presented to show the extent of the err...
15 citations
TL;DR: In this paper, the thermoelectric power and electrical conductivity data were combined and simultaneously analyzed using the effective mean free path theory of size effect in thin antimony films developed by Tellier and Pichard et al.
Abstract: Thin antimony films of thicknesses in the range 30 to 200 nm have been vacuum deposited on glass substrates at room temperature. After annealing for about an hour at 500 K, the thermoelectric power and electrical resistivity were measured in vacuum as a function of temperature. The thermoelectric power and electrical conductivity data were combined and simultaneously analysed using the effective mean free path theory of size effect in thin films developed by Tellier and Pichard et al. In addition, their temperature dependence was also analysed. It was found that the thermoelectric power is positive and increases with increasing temperature and is inversely proportional to the thickness of the film. The electrical resistivity was found to be temperature dependent with the temperature coefficient of resistivity being positive, and inversely proportional to the thickness of the film. Analysis combining the data from the thermoelectric power and electrical conductivity measurements has led to the determination of mean free path, carrier concentration, effective mass, Fermi energy and the parameter \(U_g = (d ln l_g /d ln E)_{E = E_F } \) The data were analysed for least squares fitting by local functions, such as the spline functions, which eliminates possible errors in conventional least squares fitting of data using non-local functions valid throughout the range.
13 citations
TL;DR: In this paper, electrical resistivity and Hall effect measurements have been made on vacuum evaporated Bi 90 Sb 10 alloy films of various thickness (350 A to 4500 A), in the temperature range of 77 to 510 K.
10 citations
TL;DR: In this paper, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated and it is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev.
Abstract: Bismuth thin films of various thicknesses between 15 nm and 350 nm were vacuum deposited at room temperature on to glass substrates, immediately after which they were twice heat treated at a uniform rate. During the heat treatment, the resistance changes were monitored and, using these data, the initial lattice distortion energy spectra of as-grown bismuth thin films have been evaluated. It is found that the defects have preferential activation energy values around 1.06 eV, 1.14 eV and 1.32 ev. It is also found that ∫F0 (E) dE oscillates with thickness, which is attributed to the quantum size effect.
6 citations
TL;DR: In this paper, Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K.
Abstract: Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K. The observed resistance against temperature behaviour of the films, and the effect of thickness and substrate temperature during deposition of the films, has been explained by considering that these films behave as semiconductors; the overlap between valence and conduction bands being removed due to the presence of antimony, the influence of a quantum size effect and the fact that the grain size of the films formed is a function of thickness and substrate temperature.
5 citations
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TL;DR: In this article, the effects produced by the initial distribution, the order of reaction, and the frequency factor are discussed, as well as the complications which can result from successive reactions and varying frequency factors.
Abstract: The kinetic behavior of systems in which processes occur which are distributed over a range of activation energies is considered. The effects produced by the initial distribution, the order of reaction, and the frequency factor are discussed. Imaginary and actual experimental situations are used to illustrate the large errors which can result when the distribution of the processes in activation energy is neglected. Some of the complications which can result from successive reactions and varying frequency factors are mentioned.
307 citations
241 citations
TL;DR: In this paper, the electrical resistivity change produced in copper by 1.25-Mev electron irradiation at 80.5 K was measured and the recovery of this change upon annealing has been studied.
Abstract: The electrical resistivity change produced in copper by 1.25-Mev electron irradiation at 80\ifmmode^\circ\else\textdegree\fi{}K has been measured. The recovery of this change upon annealing has been studied. A recovery state centered near room temperature exhibited a phenomenological activation energy of 0.60\ifmmode\pm\else\textpm\fi{}0.01 ev and obeyed a second-order chemical rate equation. It is proposed that this state is associated with the annihilation of interstitial atoms and vacant lattice sites resulting from interstitial migration. The present results are compared with those of other workers in an effort to understand the differences in the recovery of the electrical resistivity change produced by electron and cyclotron particle irradiation.
233 citations
TL;DR: In this paper, it was shown that dislocations arise mainly from the rotation and displacement misfits between neighbouring islands of the deposit film, and that stacking faults and microtwins are formed at the junction plane between some of the coalescing islands.
Abstract: Single crystal films of gold have been prepared by evaporation onto molybdenum disulphide inside an electron microscope. This technique has allowed direct and continuous observation, mainly by means of moir5 patterns, of the formation of lattice imperfections during film growth. It is shown that dislocations arise mainly from the rotation and displacement misfits between neighbouring islands of the deposit film, and that stacking faults and microtwins are formed at the junction plane between some of the coalescing islands. An analysis of these effects is given. One of the most significant results is that there is considerable annihilation and re-arrangement of the lattice imperfections during filni growth, particularly up to the stage of formation of a continuous hole-free film. The initial nuclei of the deposits are doubly positioned, and pronounced changes in orientation occur during and immediately following the coalescence of islands in different positions. This process occurs by the migratio...
101 citations