Book ChapterDOI
Defect Detection and Defect-Tolerant Design of a Multi-port SRAM
R. Sushmitha,O. R. Nisha,V. Ravi,T. Vigneswaran +3 more
- pp 523-537
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TLDR
In this paper, a register file with a structure of three-port SRAM cell and a differential current-mode sense amplifier for read circuitry is presented, and a read disturb fault for multi-port memories is tested on the faulty cell by simultaneous read operations with different numbers of ports.Abstract:
Static random memory (SRAM)-based multi-port memory cell can perform multiple read and write operations simultaneously, thus increasing data throughput. With the continuous scaling of transistor feature size, designing low-power robust memories for microprocessors and investigating their failure characteristics become critical. In this work, we present a register file with a structure of three-port SRAM cell and a differential current-mode sense amplifier for read circuitry. We then study the fault models for resistive defect within the SRAM cell and its failure boundary. The presence of resistive-open defects has become more and more important, due to ever-increasing complexity. A read disturb fault for multi-port memories is tested on the faulty cell by simultaneous read operations with different numbers of ports. Resistive-open defects in embedded-SRAM core cells were identified, and a March test was proposed to cover the fault models. The proposed circuit is simulated and validated for 100 runs using Monte Carlo simulations.read more
Citations
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Journal ArticleDOI
Design of Low Power SRAM Cell Using Adiabatic Logic
Ramya sri Penugonda,V. Ravi +1 more
References
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Journal ArticleDOI
Analysis of the robustness of the TMR architecture in SRAM-based FPGAs
Luca Sterpone,Massimo Violante +1 more
TL;DR: In this article, the authors present an analysis of the SEU effects in circuits hardened according to Triple Module Redundancy to investigate the possibilities of successfully applying TMR to designs mapped on commercial-off-the-shelf SRAM-based FPGAs, which are not radiation hardened.
Proceedings ArticleDOI
Resistive-open defects in embedded-SRAM core cells: analysis and march test solution
Luigi Dilillo,Patrick Girard,Serge Pravossoudovitch,Arnaud Virazel,Simone Borri,Magali Bastian Hage-Hassan +5 more
TL;DR: It is shown that a unique March test solution can ensure the complete coverage of all the faults induced by the resistive-open defects in the SRAM core-cells, which simplifies considerably the problem of delay fault testing in this part of SRAM memories.
Proceedings ArticleDOI
Error catch and analysis for semiconductor memories using march tests
TL;DR: An error catch and analysis system for semiconductor memories that consists of a test algorithm generator called TAGS, a fault simulator called RAMSES, and an error analyzer that is able to support March algorithms for easy diagnosis of faulty RAMs is presented.
Journal ArticleDOI
Modified March C - Algorithm for Embedded Memory Testing
TL;DR: Using this modified march c- algorithm the complexity is reduced to 8n as well as the test time is reduced greatly and because of concurrency in testing the sequences the test results were observed in less time than the traditional March tests.
Proceedings ArticleDOI
Open defects detection within 6T SRAM cells using a No Write Recovery Test Mode
TL;DR: This paper proposes a new design-for-test technique that it is referred to as No Write Recovery Test Mode (NWRTM) to detect all open defects, some of which produce Data Retention Faults but are undetectable by typical March tests.