Journal ArticleDOI
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.
Robert Chen,Suyog Gupta,Yi-Chiau Huang,Yijie Huo,Charles W. Rudy,Errol Antonio C. Sanchez,Yihwan Kim,Theodore I. Kamins,Krishna C. Saraswat,James S. Harris +9 more
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TLDR
A pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon is theoretically studied and experimentally demonstrated.Abstract:
We theoretically study and experimentally demonstrate a pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon. The structure theoretically exhibits many electronic and optical advantages in laser design, and microdisk resonators using these structures can be precisely fabricated away from highly defective regions in the Ge buffer using a novel etch-stop process. Photoluminescence measurements on 2.7 μm diameter microdisks reveal sharp whispering-gallery-mode resonances (Q > 340) with strong luminescence.read more
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Lasing in direct-bandgap GeSn alloy grown on Si
Stephan Wirths,R. Geiger,R. Geiger,N. von den Driesch,Gregor Mussler,Toma Stoica,Siegfried Mantl,Zoran Ikonic,Martina Luysberg,Stefano Chiussi,J. M. Hartmann,Hans Sigg,Jérôme Faist,Dan Buca,Detlev Grützmacher +14 more
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI
Optically Pumped GeSn Microdisk Lasers on Si
Daniela Stange,Stephan Wirths,R. Geiger,C. Schulte-Braucks,Bahareh Marzban,Nils von den Driesch,Gregor Mussler,T. Zabel,Toma Stoica,J. M. Hartmann,Siegfried Mantl,Zoran Ikonic,Detlev Grützmacher,Hans Sigg,Jeremy Witzens,Dan Buca +15 more
TL;DR: In this paper, a group IV microdisk laser with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry-Perot type lasers is presented.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
Journal ArticleDOI
Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
V. Reboud,Alban Gassenq,Nicolas Pauc,J. Aubin,L. Milord,Q. M. Thai,Mathieu Bertrand,Kevin Guilloy,D. Rouchon,J. Rothman,T. Zabel,F. Armand Pilon,H. Sigg,A. Chelnokov,J.M. Hartmann,V. Calvo +15 more
TL;DR: In this article, the authors reported a longer emitted wavelength and a significant improvement in lasing temperature using higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD.
Journal ArticleDOI
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
Joe Margetis,Sattar Al-Kabi,Wei Du,Wei Du,Wei Dou,Yiyin Zhou,Yiyin Zhou,Thach Pham,Thach Pham,Perry C. Grant,Perry C. Grant,Seyed Amir Ghetmiri,Aboozar Mosleh,Baohua Li,Jifeng Liu,Greg Sun,Richard A. Soref,John Tolle,Mansour Mortazavi,Shui-Qing Yu +19 more
TL;DR: In this paper, optically pumped GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors, achieving a maximum Sn composition of 17.5% exceeding the generally acknowledged Sn incorporation limits found with similar deposition chemistries.
References
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Journal ArticleDOI
Ultra-high-Q toroid microcavities on a chip
TL;DR: This work demonstrates a process for producing silica toroid-shaped microresonators-on-a-chip with Q factors in excess of 100 million using a combination of lithography, dry etching and a selective reflow process, representing an improvement of nearly four orders of magnitude over previous chip-based resonators.
Journal Article
Optical microcavities : Photonic technologies
TL;DR: Optical microcavities confine light to small volumes by resonant recirculation as discussed by the authors, and are indispensable for a wide range of applications and studies, such as long-distance transmission of data over optical fibres; they also ensure narrow spot-size laser read/write beams in CD and DVD players.
Journal ArticleDOI
Whispering-gallery mode microdisk lasers
TL;DR: In this paper, a new microlaser design based on the highreflectivity whisperinggallery modes around the edge of a thin semiconductor microdisk is described and initial experimental results are presented.
Journal ArticleDOI
High-performance Ge-on-Si photodetectors
TL;DR: In this article, the authors summarized the major developments in Ge-on-Si photodetectors, including epitaxial growth and strain engineering, free-space and waveguide-integrated devices, as well as recent progress in Geon-On-Si avalanche photodets.