Journal ArticleDOI
Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode
Shiro Hino,Hatta Hideyuki,Koji Sadamatsu,Y. Nagahisa,Shigehisa Yamamoto,T. Iwamatsu,Yasuki Yamamoto,Masayuki Imaizumi,Shuhei Nakata,Satoshi Yamakawa +9 more
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TLDR
In this paper, an external Schottky barrier diodes (SBD) is used to suppress the conduction of the body diode of an MOSFET, which can reduce the total chip size of high voltage modules.Abstract:
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD should be kept smaller than the built-in potential of the body diode. Embedding SBD into MOSFET with short cycle length increases maximum source-drain voltage where body diode remains inactive, resulting in high current density of SBD current. We propose a MOSFET structure where an SBD is embedded into each unit cell and an additional doping is applied, which allows high current density in reverse operation without any activation of body diode. The proposed MOSFET was successfully fabricated and much higher reverse current density was demonstrated compared to the external SBD. We can expect to reduce total chip size of high voltage modules using the proposed MOSFET embedding SBD.read more
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Journal ArticleDOI
Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme
TL;DR: In this paper, the authors reported a new 900 V 4H-SiC JBSFET with an integrated JBS diode in the center area of the chip, which resulted in 30% reduction in SiC wafer area consumption in case of 10 A rating device.
Proceedings ArticleDOI
6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module
Koutarou Kawahara,Shiro Hino,Koji Sadamatsu,Yukiyasu Nakao,Yamashiro Yusuke,Yasuki Yamamoto,T. Iwamatsu,Shuhei Nakata,Shingo Tomohisa,Satoshi Yamakawa +9 more
TL;DR: In this article, an SBD is embedded into each unit cell of a 6.5 kV SiC-MOSFET to suppress current conduction of the body diodes, which causes bipolar degradation following the expansion of stacking faults.
Proceedings ArticleDOI
High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier
Fu-Jen Hsu,Cheng-Tyng Yen,Chien-Chung Hung,Hsiang-Ting Hung,Chwan-Ying Lee,Lurng-Shehng Lee,Yao-Feng Huang,Tzong-Liang Chen,Pei-Ju Chuang +8 more
TL;DR: A junction barrier controlled Schottky rectifier integrated silicon carbide MOSFET (SiC JMOS) was proposed in this paper, which merged a double implanted MOS FET (DMOS) and junction barrier control Schottkey diode (JBS) in a monolithic SiC device without any additional process and area penalty.
Proceedings ArticleDOI
Body PiN diode inactivation with low on-resistance achieved by a 1.2 kV-class 4H-SiC SWITCH-MOS
Yusuke Kobayashi,Naoyuki Ohse,Tadao Morimoto,Makoto Kato,Takahito Kojima,Masaki Miyazato,Manabu Takei,Hiroshi Kimura,Shinsuke Harada +8 more
TL;DR: In this article, an SBD-wall-integrated trench MOSFET (SWITCH-MOS) was developed, in which small cell pitch of 5pm was realized by utilizing trench side walls both for SBD and MOS channel with buried p+ layer.
Journal ArticleDOI
Investigation on Degradation of SiC MOSFET Under Surge Current Stress of Body Diode
TL;DR: In this paper, the intrinsic body diode of SiC planar gate MOSFETs was subjected to surge current stress, and the degradation mechanism was discussed when the SiC SBD was removed.