Journal ArticleDOI
Dependence of hole velocity upon electric field and hole density for p-type silicon
T.E. Seidel,D.L. Scharfetter +1 more
Reads0
Chats0
TLDR
In this article, the hole velocities in p-type Si have been determined for fields E to 1.1 × 10 5 V / cm at 300°K for hole densities in the range 10 14 − 10 16 /cm 3.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1967-01-01. It has received 34 citations till now. The article focuses on the topics: Current density & Electric field.read more
Citations
More filters
Journal ArticleDOI
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
Journal ArticleDOI
Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Journal ArticleDOI
A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
Journal ArticleDOI
A charge control relation for bipolar transistors
TL;DR: A relation is given which links emitter and collector junction voltages, V eb and V eb , collector current I c , and the total charge Q b of carriers that enter through the base terminal (electrons in a pnp transistor).
Journal ArticleDOI
Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors
TL;DR: In this paper, the drift velocities in semiconductor materials suitable for solid state detectors have been reviewed and an anisotropy effect in the drift velocity obtained by applying the electric field parallel to different crystallographic axis is also discussed for the case of Si and Ge.
References
More filters
Journal ArticleDOI
B.S.T.J. briefs: A silicon diode microwave oscillator
TL;DR: In this paper, the fabrication details and pcrformance data of a microwave oscillator based on silicon diodes have been reported and the similarties of this device to that proposed by Read I are discussed.
Journal ArticleDOI
The field-dependence of carrier mobility in silicon and germanium
TL;DR: In this paper, the variation of mobility with electric field has been measured for n- and p-type silicon and germanium with fields up to 105 V cm, and the variation was found to depend on hole concentration.
Journal ArticleDOI
Hole and electron mobilities in doped silicon from radiochemical and conductivity measurements
TL;DR: In this article, the room temperature conductivity mobilities of holes and electrons in Ga, As, and Sb doped silicon have been calculated from electrical and radiochemical measurements using the effective mass approximation.
Journal ArticleDOI
Measurement of the drift velocity of holes in silicon at high-field strengths
TL;DR: In this article, a method for the measurement of the velocity-field relationship of charge carriers in a semiconductor was presented, which is based on the injection by punch-through of charge carrier into a long depleted region.