Journal ArticleDOI
Dependence of hydrogen and oxygen incorporation on deposition parameters in photochemical vapor deposited mercury free silicon nitride films
B.S Sahu,P. C. Srivastava,O.P Agnihotri,O.P Agnihotri,Hun-Su Lee,B.R Sekhar,S Mahapatra,M.K Tiwari +7 more
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TLDR
In this paper, the incorporation of oxygen and hydrogen in all the films, which is a function of the deposition parameters, has been investigated and shown that incorporated hydrogen and oxygen passivate surface defects thereby influencing interface electronic state densities and fixed insulating charges.About:
This article is published in Thin Solid Films.The article was published on 2004-01-01. It has received 4 citations till now. The article focuses on the topics: Silicon nitride & Thin film.read more
Citations
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Characterisation of the silicon nitride thin films deposited by plasma magnetron
TL;DR: In this paper, a planar DC sputtering system was used for deposition of silicon nitride thin films, which were characterised by optical interferometry (thickness measurement), Fourier transformed infrared spectroscopy (FTIR), X-ray diffraction (XRD), and XPS.
Journal ArticleDOI
Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film
TL;DR: It is speculated that less incorporation of hydrogen in as-deposited films with moderate Si content helps in the stabilization of the silicon nitride (Si(3)N(4)) phase and may also enable unreacted Si atoms to cluster after RTA.
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Transformation of sputtered calcium copper titanate thin film into nanorods by sequential annealing
TL;DR: In this paper, a plausible growth mechanism has been proposed to explain the formation of CCTO nanorods, based on the FESEM observations, and the presence of nanoscale crystals in amorphous matrix has been observed by HRTEM studies.
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Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiNx:H Thin Film for Si-Based Optoelectronic Devices
TL;DR: In this paper, a review of the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases.
References
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Journal ArticleDOI
Chemical effects on the frequencies of Si-H vibrations in amorphous solids
TL;DR: In this article, it was shown that the frequencies of the bond-stretching vibrations of Si-H groups in amorphous solids vary systematically with the electronegativities of the next nearest neighbor atoms of the network.
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Longitudinal Optical Vibrations in Glasses: Ge O 2 and Si O 2
F. L. Galeener,G. Lucovsky +1 more
TL;DR: In this article, longitudinal optical (LO) vibrational modes account for several previously unexplained peaks in the Raman spectra of vitreous Ge${\mathrm{O}}_{2}$ and Si${O}
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Electronic structure of hydrogenated and unhydrogenated amorphous Si N x ( 0 ≤ x ≤ 1 . 6 ) : A photoemission study
TL;DR: In this article, the position, width, and shape of the Si $2p$ line as a function of $x$ are interpreted in terms of a superposition of five chemically shifted components which correspond to the possible bonding configurations.
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Hydrogen role on the properties of amorphous silicon nitride
TL;DR: In this article, an interatomic potential was developed to investigate structural properties of hydrogenated amorphous silicon nitride and showed that hydrogen has a different chemical preference to bind to either nitrogen or silicon.
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Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
TL;DR: In this paper, the Wentzel-Kramers-Brillouin (WKB) effective mass approximation has been compared with exact calculations for the tunneling probability, and based on these comparisons it has been found that the WKB approximation is adequate for single-layer dielectrics, but is not for the dual-layer dieslectrics that are the focus of this article.